MOSFET- N & P-Channel, POWERTRENCH) 20 V FDG6332C General Description www.onsemi.com T h e N & P -C h a n n e l M O S F E Ts a r e p r o d u c e d u s i n g ON Semiconductor's advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. D G S S Pin 1 G D SC-88/SC70-6/SOT-363 CASE 419B-02 Features MARKING DIAGRAM * Q1 0.7 A, 20 V RDS(ON) =300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V Q2 -0.6 A, -20 V RDS(ON) = 420 mW @ VGS = -4.5 V RDS(ON) = 630 mW @ VGS = -2.5 V Low Gate Charge High Performance Trench Technology for Extremely Low RDS(ON) SC70-6 Package: Small Footprint (51% Smaller than SSOT-6); Low Profile (1 mm Thick) These Devices are Pb-Free and are RoHS Compliant * * * * * Applications * DC/DC Converter * Load Switch * LCD Display Inverter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Symbol Q1 Q2 20 -20 V Gate-Source Voltage 12 12 V Drain Current Continuous (Note 1) 0.7 -0.6 A Pulsed 2.1 -2 TJ, TSTG Operating and Storage Junction Temperature Range PIN CONNECTIONS 1 6 2 5 3 4 Complementary ORDERING INFORMATION Drain-Source Voltage Power Dissipation for Single Operation (Note 1) = Specific Device Code = Assembly Operation Month See detailed ordering and shipping information on page 2 of this data sheet. VDSS PD 32 M Units VGSS ID 32M 0.3 W -55 to 150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2003 June, 2020 - Rev. 4 1 Publication Order Number: FDG6332C/D FDG6332C THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction-to-Ambient (Note 1) RqJA Ratings Unit 415 _C/W 1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. RqJA = 415C/W on minimum pad mounting on FR-4 board in still air. ORDERING INFORMATION Device Marking Device Reel Size Tape Width Shipping 32 FDG6332C 7" 8 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit V OFF CHARACTERISTICS BVDSS DBVDSS / DTJ IDSS Drain-Source Breakdown Voltage Q1 VGS = 0 V, ID = 250 mA 20 - - Q2 VGS = 0 V, ID = -250 mA -20 - - Breakdown Voltage Temperature Coefficient Q1 ID = 250 mA, Referenced to 25_C - 14 - Q2 ID = -250 mA, Referenced to 25_C - -14 - Zero Gate Voltage Drain Current Q1 VDS = 16V, VGS = 0 V - - 1 Q2 VDS = -16 V, VGS = 0 V - - -1 mV/_C mA IGSSF / IGSSR Gate-Body Leakage, Forward VDS = 12 V, VGS = 0 V - - 100 nA IGSSF / IGSSR Gate-Body Leakage, Reverse VGS = 12 V, VDS = 0 V - - 100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage DVGS(th) / DTJ Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance RDS(on) Q1 VDS = VGS, ID = 250 mA 0.6 1.1 1.5 Q2 VDS = VGS, ID = -250 mA -0.6 -1.2 -1.5 Q1 ID = 250 mA, Referenced to 25_C - -2.8 - Q2 ID = -250 mA, Referenced to 25_C - 3 - Q1 VGS = 4.5 V, ID = 0.7 A - 180 300 VGS = 2.5 V, ID = 0.6 A - 293 400 VGS = 4.5 V, ID = 0.7 A, TJ = 125_C - 247 442 VGS = -4.5 V, ID = -0.6 A - 300 420 VGS = -2.5 V, ID = -0.5 A - 470 630 VGS = -4.5 V, ID = -0.6 A, TJ = 125_C - 400 700 Q1 VDS = 5 V, ID = 0.7 A - 2.8 - Q2 VDS = -5 V, ID = -0.6 A - 1.8 - Q1 VGS = 4.5 V, VDS = 5 V 1 - - Q2 VGS = -4.5 V, VDS = -5 V -2 - - Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz - 113 - Q2 VDS = -10 V, VGS = 0 V, f = 1.0 MHz - 114 - Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz - 34 - Q2 VDS = -10 V, VGS = 0 V, f = 1.0 MHz - 24 - Q2 gFS ID(on) Forward Transconductance On-State Drain Current mV/_C mW S A DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance www.onsemi.com 2 pF pF FDG6332C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit pF DYNAMIC CHARACTERISTICS Crss Reverse Transfer Capacitance Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz - 16 - Q2 VDS = -10 V, VGS = 0 V, f = 1.0 MHz - 9 - Q1 For Q1 VDS = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 W - 5 10 - 5.5 11 - 7 15 - 14 25 - 9 18 Q2 - 6 12 Q1 - 1.5 3 Q2 - 1.7 3.4 - 1.1 1.5 - 1.4 2 - 0.24 - - 0.3 - - 0.3 - - 0.4 - SWITCHING CHARACTERISTICS (Note 2) td(on) Turn-On Delay Time Q2 tr Turn-On Rise Time Q1 Q2 td(off) tf Qg Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Q1 Q1 Q2 Qgs Gate-Source Charge Q1 Q2 Qgd Gate-Drain Charge Q1 For Q2 VDS = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 W For Q1 VDS = 10 V, ID = 0.7 A, VGS = 4.5 V, RGEN = 6 W For Q2 VDS = -10 V, ID =-0.6 A, VGS = -4.5 V, RGEN = 6 W Q2 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Q1 - - 0.25 Q2 - - -0.25 Drain-Source Diode Forward Voltage Q1 VGS = 0 V, IS = 0.25 A (Note 2) - 0.74 1.2 Q2 VGS = 0 V, IS = -0.25 A (Note 2) - -0.77 -1.2 A V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% www.onsemi.com 3 FDG6332C TYPICAL PERFORMANCE CHARACTERISTICS: N-CHANNEL 1.8 VGS = 4.5 V 3.0 V 3.5 V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID , DRAIN CURRENT (A) 4 2.5 V 3 2 2.0 V 1 1.6 VGS = 2.5 V 1.4 3.0 V 1.2 3.5 V 1 0 2 3 4 0 1 Figure 1. On-Region Characteristics 1.6 2 3 4 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.8 ID = 0.7 A VGS = 4.5 V ID = 0.4 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5 V 0.8 0 1.4 1.2 1 0.8 0.6 TA = 125 C 0.4 TA = 25 C 0.2 0 0.6 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 2.5 10 TA = -55 C 2 25 C I S, REVERSE DRAIN CURRENT (A) VDS = 5 V I D , DRAIN CURRENT (A) 4.0 V 1 125 C 1.5 1 0.5 VGS = 0 V 1 TA = 125 C 25 C 0.1 -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 VGS , GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 4 FDG6332C TYPICAL PERFORMANCE CHARACTERISTICS: N-CHANNEL (continued) 200 VDS = 5 V ID = 0.7 A f = 1MHz VGS = 0 V 10 V 4 150 15 V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 100 COSS 50 CRSS 0 0 0 0.4 0.8 1.2 0 1.6 Figure 7. Gate Charge Characteristics 10 15 20 Figure 8. Capacitance Characteristics 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 100 ms 1 ms 1 10 ms 100 ms 1s VGS = 4.5 V SINGLE PULSE RqJA = 415 C/W 0.1 DC T A = 25 C 0.1 1 10 6 4 2 0 0.001 0.01 100 SINGLE PULSE RqJA = 415C/W TA = 25C 8 0.01 0.1 1 10 t 1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation www.onsemi.com 5 100 FDG6332C TYPICAL PERFORMANCE CHARACTERISTICS: P-CHANNEL 1.8 VGS = -4.5 V -3.0 V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 2 -3.5 V 1.6 -2.5 V 1.2 0.8 -2.0 V 0.4 VGS = -2.5 V 1.6 1.4 -3.0 V 1.2 -3.5 V -4.0 V -4.5 V 1 0.8 0 0 1 2 3 0 4 0.5 Figure 11. On-Region Characteristics 2 1.2 ID = -0.6A VGS = -4.5V 1.3 R DS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage 1.4 1.2 1.1 1 0.9 0.8 ID = -0.3 A 1 0.8 T A = 125 C 0.6 TA = 25 C 0.4 0.2 0.7 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) Figure 13. On-Resistance Variation with Temperature Figure 14. On-Resistance Variation with Gate-to-Source Voltage 10 2 TA = -55 C VGS = 0V 25 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5 V -I D , DRAIN CURRENT (A) 1 -I D , DRAIN CURRENT (A) -V DS, DRAIN-SOURCE VOLTAGE (V) 125 C 1.5 1 0.5 1 TA = 125 C 0.1 25 C 0.01 -55 C 0.001 0.0001 0 0.5 1 1.5 2 2.5 0 3 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 6 FDG6332C TYPICAL PERFORMANCE CHARACTERISTICS: P-CHANNEL (continued) 160 ID = -0.6 A VDS = -5 V f = 1 MHz VGS = 0 V -10 V 4 120 -15 V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 80 COSS 40 1 CRSS 0 0 0 0.6 0.3 0.9 1.2 1.5 0 1.8 Figure 17. Gate Charge Characteristics 10 15 20 Figure 18. Capacitance Characteristics 10 10 POWER (W) 1 10 ms 100 ms 1s DC VGS = -4.5 V SINGLE PULSE RqJA = 415 C/W 0.1 TA = 25 C 6 4 2 TA = 25 C 0.01 0.1 SINGLE PULSE RqJA = 415 C/W 8 100 ms 1 ms RDS(ON) LIMIT 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 100 0.01 0.1 1 10 100 SINGLE PULSE TIME (sec) Figure 19. Maximum Safe Operating Area Figure 20. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -I D, DRAIN CURRENT (A) 5 -V DS , DRAIN TO SOURCE VOLTAGE (V) Q g, GATE CHARGE (nC) D = 0.5 0.2 0.1 0.1 RqJA (t) = r(t) * RqJA RqJA = 415C/W 0.05 0.02 P(pk) 0.01 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 t2 TJ - TA = P * RqJA (t) Duty Cycle, D = t1 / t2 0.01 0.1 1 t 1, TIME (sec) Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. Figure 21. Transient Thermal Response Curve www.onsemi.com 7 10 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX --- --- 1.10 0.00 --- 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX --- 0.043 --- 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN --- 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC-88/SC70-6/SOT-363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC-88/SC70-6/SOT-363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800-282-9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative