12A02MH-TL-E - ON Semiconductor

12A02MH

No.7483-1/6

Applications

• Low-frequency Ampliﬁ er, high-speed switching, small motor drive, muting circuit

Features

• Large current capacity

• Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]

• Small ON-resistance (Ron)

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --15 V

Collector-to-Emitter Voltage VCEO --12 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--1 A

Collector Current (Pulse) ICP --2 A

Collector Dissipation PC

When mounted on ceramic substrate (600mm2×0.8mm)

600 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7019A-004

Ordering number : EN7483A

90512 TKIM/O2203 TSIM TA-100608

SANYO Semiconductors

DATA SHEET

12A02MH

PNP Epitaxial Planar Silicon Transistor

Low-Frequency General-Purpose

Ampliﬁ er Applications

http://www.sanyosemi.com/en/network/

Product & Package Information

• Package : MCPH3

• JEITA, JEDEC : SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

1 : Base

2 : Emitter

3 : Collector

SANYO : MCPH3

0.250.25

0.07

2.1

1.6

2.0

0.65 0.3

0.85

0.15

0 to 0.02

12A02MH-TL-E

LOT No.

12A02MH

No.7483-2/6

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB= --12V, IE=0A --100 nA

Emitter Cutoff Current IEBO VEB= --4V, IC=0A --100 nA

DC Current Gain hFE VCE= --2V, IC= --10mA 300 700

Gain-Bandwidth Product fTVCE= --2V, IC= --50mA 450 MHz

Output Capacitance Cob VCB= --10V, f=1MHz 6 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC= --400mA, IB= --20mA --120 --240 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC= --400mA, IB= --20mA --0.9 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --15 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --12 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --10μA, IC=0A --5 V

Turn-ON Time ton See speciﬁ ed Test Circuit. 30 ns

Storage Time tstg 75 ns

Fall Time tf15 ns

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

12A02MH-TL-E MCPH3 3,000pcs./reel Pb Free

VRRB

VCC= --5VVBE=5V

50Ω

INPUT

OUTPU

220μF 470μF

PW=20μsIB1

D.C.≤1% IB2

IC=20IB1= --20IB2= --400mA

Collector-to-Emitter Voltage, VCE -- mV

IC -- VCE

Collector Current, IC -- mA

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

Collector Current, IC -- mA

--1000

--200

--100

--200

--300

--400

--500

--600

--700

--800

--900

--400

--1200

--600

--800

--1000

--200

--500 --1000--800 --900--100 --300 --400 --600 --700

IT05094

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2

IT05095

--20mA

--30mA

--15mA

--10mA

--7mA

--5mA

--3mA

--2mA

--1mA

--0.5mA

IB=0mA

VCE= --2V

25°C

--25°C

Ta=75°C

12A02MH

No.7483-3/6

020 40 60 80 100 120

600

500

400

300

200

100

700

140 160

Mounted on a ceramic board(600mm2✕0.8mm)

Ambient Temperature, Ta -- °C

PC -- Ta

Collector Dissipation, PC -- mW

IT05104

Collector Current, IC -- mA

fT -- IC

Gain-Bandwidth Product, fT -- MHz

IT05101

Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Output Capacitance, Cob -- pF

IT05100

Collector Current, IC -- mA IT05098

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

IT05099

Collector Current, IC -- mA

VBE(sat) -- IC

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

--1.0 53 --1000--100

27 5327 5327

--10

2735 --10 23

--1.0

1.0

--1.0 357

--10

235723572

--100 --1000

--10

--1.0

--0.1

--1.0

--100

--1000

--10

23 57 23 57

--100 2--1000

357

--10

IC / IB=50

Ta=75

25°C

--25°C

IC / IB=20

Ta= --25°C

f=1MHz VCE= --2V

100

1000

ON-resistance, Ron -- Ω

f=1MHz

--0.1

Ron -- IB

IT06091

0.1

1.0

32 57 32 57

--1.0 --10

OUT

IN 1kΩ

1kΩ

Base Current, IB -- mA

Collector Current, IC -- mA

hFE -- IC

DC Current Gain, hFE

Collector Current, IC -- mA

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

--1.0 23 57 23 57 23 57

--10 --100

100

1000

--100

--1000

--1.0

--10

--1000

IT05096 IT05097

--1.0 23 57

--10 23 57 23 57

--100 --1000

--25

Ta=75

VCE= --2V IC / IB=20

Ta=75°C

25°C

--25°C

12A02MH

No.7483-4/6

Embossed Taping Speciﬁ cation

12A02MH-TL-E

12A02MH

No.7483-5/6

Outline Drawing Land Pattern Example

12A02MH-TL-E

Mass (g) Unit

0.007

* For reference

mm Unit: mm

0.65 0.65

0.4

2.1

0.6

12A02MH

PS No.7483-6/6

This catalog provides information as of September, 2012. Speciﬁ cations and information herein are subject

to change without notice.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

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different from current conditions on the usage of automotive device, communication device, office equipment,

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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer's

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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,

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