VISHAY
BAS16WS
Document Number 85752
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• Also available in case SOT-23 with designation
BAS16
Mechanical Da ta
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part O rdering code Marking Remarks
BAS16WS BAS16WS-GS18 or BAS16WS-GS08 A6 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR75 V
Peak reverse voltage VRM 100 V
Forw ard current (continuous) IF250 mA
Non-repetitive peak forward
current t = 1 µsI
FSM 2.0 A
t = 1 ms IFSM 1.0 A
t = 1 s IFSM 0.5 A
Power dissipation Ptot 200 mW
Parameter Test condition Symbol Value Unit
Maximum junction temperature Tj150 °C
Storage temperature TS- 65 to 150 °C
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2Document Number 85752
Rev. 1.5, 08-Jul-04
VISHAY
BAS16WS
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 1 mA VF715 mV
IF = 10 mA VF855 mV
IF = 50 mA VF1.00 V
IF = 150 mA VF1.25 V
Leakage current VR = 25 V, TJ = 150 °C IR30 µA
VR = 75 V IR1µA
VR = 75 V, TJ = 150 °C IR50 µA
Diode capacitance VR = 0; f = 1 MHz Ctot 2pF
Reverse recovery time IF = 10 mA to IR = 10 mA,
IR = 1 mA, RL = 100 Ωtrr 6ns
Ther mal resistance junct ion to
ambient air RthJA 650 °C/W
Figure 1. Forward characteristics
Figure 2. Dynamic Forward Resistance vs. Forward Current
18105
17438
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Relative Capacitance vs. Reverse Voltage
18185
17440
VISHAY
BAS16WS
Document Number 85752
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Figure 5. Leakage Current vs. Junction Temperature
17441
18106
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
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4Document Number 85752
Rev. 1.5, 08-Jul-04
VISHAY
BAS16WS
Vishay Semiconductors
Package Di mens ions in mm (Inches)
17443
Cathode Band
0.3 (0.012)
2.85 (0.112)
2.50 (0.098)
1.95 (0.076)
1.60 (0.062)
1.1 (0.043)
1.5 (0.059)
0.15 (0.006) max.
1.25 (0.049) max.
0.1 (0.004) max. 0.25 (0.010) min.
1.60 (0.062)
1.40 (0.055)
0.39 (0.015)
ISO Method E
Mounting Pad Layout
VISHAY
BAS16WS
Document Number 85752
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Prot ection Agency (E PA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to impr ove te chnical design
and may do so without further notic e.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
