SFH 203
SFH 203 FA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiode with Very Short Switching Time
SFH 203 SFH 203 FA
2001-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm (SFH 203) und bei
880 nm (SFH 203 FA)
• Kurze Schaltzeit (typ. 5 ns)
• 5 mm-Plastikbauform im LED-Gehäuse
• Auch gegurtet lieferbar
Anwendungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Schnelle Lichtschranken für Gleich- und
Wechsellichtbetrieb
•LWL
Typ
Type Bestellnummer
Ordering Code
SFH 203 Q62702-P955
SFH 203 FA Q62702-P956
Features
• Especially suitable for applications from
400 nm to 1100 nm (SFH 203) and of 880 nm
(SFH 203 FA)
• Short switching time (typ. 5 ns)
• 5 mm LED plastic package
• Also available on tape and reel
Applications
• Industrial electronics
• For control and drive circuits
• Photointerrupters
• Fiber optic transmission systems
2001-02-22 2
SFH 203, SFH 203 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top;Tstg –40…+100
°
C
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit t
£
3s)
Soldering temperature in 2 mm distance from case
bottom (t
£
3s)
TS230
°
C
Sperrspannung
Reverse voltage VR50 V
Verlustleistung
Total power dissipation Ptot 100 mW
Kennwerte (TA=25
°
C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 203 SFH 203 FA
Fotostrom
Photocurrent
VR= 5 V, Normlicht/standard light A,
T= 2856 K, EV= 1000 lx
VR=5V,
l
= 950 nm, Ee=1mW/cm
2
IP
IP
80 (
³
50)
–
–
50 (
³
30)
m
A
m
A
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
l
Smax 850 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S= 10% von Smax
Spectral range of sensitivity
S= 10% of Smax
l
400 … 1100 800 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A11mm
2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L
´
B
L
´
W1
´
11
´
1mm
´
mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H4.0 … 4.6 4.0 … 4.6 mm
Halbwinkel
Half angle
j±
20
±
20 Grad
deg.
SFH 203, SFH 203 FA
2001-02-22 3
Dunkelstrom, VR=20V
Dark current IR1(
£
5) 1 (
£
5) nA
Spektrale Fotoempfindlichkeit,
l
=850nm
Spectral sensitivity S
l
0.62 0.59 A/W
Quantenausbeute,
l
= 850 nm
Quantum yield
h
0.89 0.86 Electrons
Photon
Leerlaufspannung
Open-circuit voltage
Ev= 1000 Ix, Normlicht/standard light A,
T= 2856 K
Ee= 0.5 mW/cm2,
l
= 950 nm
VO
VO
420 (
³
350)
–
–
370 (
³
300)
mV
mV
Kurzschlußstrom
Short-circuit current
Ev= 1000 Ix, Normlicht/standard light A,
T= 2856 K
Ee= 0.5 mW/cm2,
l
= 950 nm
ISC
ISC
80
–
–
25
m
A
m
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL=50
W;
VR
=20V;
l
= 850 nm; Ip=800
m
A
tr,tf55ns
Durchlaßspannung, IF
=80mA,E=0
Forward voltage VF1.3 1.3 V
Kapazität, VR
=0V,f=1MHz,E=0
Capacitance C011 11 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
l
= 950 nm TCI0.18
––
0.2 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR
=20V,
l
= 850 nm
NEP 2.9
´
10–14 2.9
´
10–14
Nachweisgrenze, VR
=20V,
l
= 850 nm
Detection limit D* 3.5
´
1012 3.5
´
1012
Kennwerte (TA=25
°
C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 203 SFH 203 FA
W
Hz
------------
cm Hz
´
W
--------------------------
SFH 203, SFH 203 FA
2001-02-22 4
Relative Spectral Sensitivity
SFH 203
Srel =f(
l
)
Photocurrent IP=f(Ee), VR=5V
Open-Circuit-Voltage VO=f(Ee)
SFH 203 FA
Directional Characteristics
Srel =f(
j
)
λ
OHF01034
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
Relative Spectral Sensitivity
SFH 203 FA
Srel =f(
l
)
Total Power Dissipation
Ptot =f(TA)
λ
OHF01773
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
OHR00883
0
F
I
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
Photocurrent IP=f(Ev), VR=5V
Open-Circuit Voltage VO=f(Ev)
SFH 203
Dark Current
IR=f(VR), E=0
V
OHF01026
R
R
Ι
0
4
10
3
10
2
10
10
1
pA
20 V 3010
SFH 203, SFH 203 FA
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shallhave to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1may only be used in life-support devices or systems 2with the express written approval of OSRAM OS.
1A critical component is a component used in alife-support device or system whose failure can reasonably beexpected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
4.8 (0.189)
4.2 (0.165)
ø5.1 (0.201)
ø4.8 (0.189)
0.8 (0.031)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
Area not flat
Chip position
Cathode
GEOY6645
