DIL CMBT2369 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VcBo max. 40 V Collector-emitter voltage (VBE = 0) VCES max. 40 V Collector-emitter voltage (open base) VCEO max. 15 V Emitter~base voltage (open collector) VEBO max. 45 V Collector current (d.c. value) Ic max. 500 mA Total power dissipation.up to Tamb = 25 C Ptot max. 250 mW Sterage temperature Tstg ~55 to 150C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient in free air Rth jea = 500 K/W CHARACTERISTICS (at Ta = 25C unless otherwise specified) Tj = 25 C unless otherwise specified Collector cut-off current Ig = 0; Vcp = 20 V IcBo < 400 nA Tg = 0; VcB = 20V; Tj = 125C IcBo < 30 pA Saturation voltages Ic = 10 mA; lg = 1 mA VcCEsat < 0,25 V VBEsat 0,70 to 0,85 V D.C. current gain Ic = 10mA; VcE=1V hfe 40 to 120 Ic = 10mA; Vcg = 1 V; Tamb = 55C hpE > 20 Ic = 100 mA; Veg =2 V hpg > 20 Output capacitance at f = 1 MHz Ig = 0; Vcp = 5V Co < 4,0 pF Small-signal current gain Ic = 1,0mA; Veg = 10V; f = 100MHz; Tamb = 25C hfe > 5,0 Breakdown voltages Ic = 10 mA; lp = 0 V(BR)CEG min. 15 V Ic = 10uA; Ig = 0 V(BR)CBO min. 40 V Ic = 0; Ip = 10pA. V(BREBO min. 4,5 V Ic = 10nA; VBE = 0 V(BR)CES min. 40 V Switching times at Tamb = 25 C Storage time typ. 5,0 ns ICon = IBon = lBoff = 10 mA ts < 13 ns Turnon time ton typ. 8,0 ns Ic = 10mA; IBon = 3mA; Vcc = 3V ton < 12 ns Turn-off time toff typ. 10 ns Ic = 10mA; IBon = 3MA; IBoff = 1,5mA; Vcc = 3V toff < 18 ns 100DIL CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking PACKAGE OUTLINE DETAILS CMBT2369 = JJ ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i143 Pin configuration 2.6 4. ~de- o L "' 1= BASE 2.4 | 2 = EMITTER : 3 = COLLECTOR 1 2| | 8 1.02_| TP 0.89 1 . 0.60 2.00 0.40 1.80 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Veco max. 40 V Collector-emitter voltage (VBE = 0) VCES max. 40 V Collector-emitter voltage (open base) VCEO max. 15 V Collector current (d.c. value) Ic max. 500 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW D.C. current gain Ic = 10mA; VcgE =1V hpE 40 to 120 Ic = 100 mA; Veg =2V hpp > 20 Storage time Icon = IBon = IBofg = 10 MA ts < 13 ns 99