DMJT9435 NEW PRODUCT LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data * * * * * * * Ideally Suited for Automated Assembly Processes Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) * * * * * Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) COLLECTOR 2,4 3 E C 4 1 BASE 1 B 3 EMITTER Top View Maximum Ratings 2 C Pin Out Configuration Device Schematic @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Continuous Base Current Symbol VCBO VCEO VEBO ICM IC IB Value -45 -30 -6 -5 -3 -1 Unit V V V A A A Value 1.2 104 2 62.5 3 42 -55 to +150 Unit W C/W W C/W W C/W C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Power Dissipation @ TC = 25C Thermal Resistance, Junction to Case @ TC = 25C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RJA PD RJA PD RJA TJ, TSTG No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. DMJT9435 Document number: DS31622 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 (c) Diodes Incorporated DMJT9435 Electrical Characteristics @TA = 25C unless otherwise specified Symbol Min Typ Max Unit V(BR)CEO V(BR)EBO -30 -6 -20 V V A Collector-Base Cutoff Current ICER -200 A Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) IEBO -10 A DC Current Gain hFE -100 -250 83 -210 -275 -550 183 -1.25 -1.1 m V V Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(SAT) VBE(SAT) VBE(ON) 125 110 90 fT 160 MHz Cobo Cibo 45 140 150 pF pF ton td tr toff ts tf 200 90 110 155 100 55 ns ns ns ns ns ns Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: mV Test Conditions IC = -10mA IE = -50A VCB = -25V, RBE = 200 VCB = -25V, RBE = 200, TA = 125C VEB = -5V, IC = 0 VCE = -1V, IC = -0.8A VCE = -1V, IC = -1.2A VCE = -1V, IC = -3A IC = -0.8A, IB = -20mA IC = -1.2A, IB = -20mA IC = -3A, IB = -300mA IC = -3.0A, IB = -300mA IC = -3A, IB = -300mA VCE = -4V, IC = -1.2A VCE = -10V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz VEB = -8V, f = 1MHz VCC = -15V, IC = -1.2A, IB1 = -20mA VCC = -15V, IC = -1.2A, IB1 = IB2 = -20mA 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.0 -IC, COLLECTOR CURRENT (A) 2.0 PD, POWER DISSIPATION (W) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage 1.6 1.2 Note 4 0.8 Note 3 0.4 0.8 IB = -5mA IB = -4mA 0.6 IB = -3mA 0.4 IB = -2mA 0.2 IB = -1mA 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature DMJT9435 Document number: DS31622 Rev. 2 - 2 2 of 4 www.diodes.com 0 4 8 12 16 20 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage December 2008 (c) Diodes Incorporated DMJT9435 10 1,000 VCE = -1V -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN TA = 85C TA = 25C 100 TA = -55C 1 TA = 150C 0.1 T A = 25C T A = -55C 0.01 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 VCE = -4V 1.0 0.8 TA = -55C 0.6 T A = 25C 0.4 T A = 85C TA = 150C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) TA = 85C 0.001 10 1.2 IC/IB = 10 1.0 0.8 T A = -55C 0.6 TA = 25C TA = 85C 0.4 TA = 150C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) f = 1MHz CAPACITANCE (pF) NEW PRODUCT T A = 150C 100 Cibo 10 Cobo 1 100 10 VCE = -10V f = 100MHz 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DMJT9435 Document number: DS31622 Rev. 2 - 2 3 of 4 www.diodes.com 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current December 2008 (c) Diodes Incorporated DMJT9435 Ordering Information (Note 6) Part Number DMJT9435-13 NEW PRODUCT Notes: Case SOT-223 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW ZPS33 ZPS33 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMJT9435 Document number: DS31622 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 (c) Diodes Incorporated