DMJT9435
Document number: DS31622 Rev. 2 - 2 1 of 4
www.diodes.com December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automated Assembly Processes
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Co mpound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -45 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -5 A
Continuous Collector Current IC -3 A
Continuous Base Current IB -1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 1.2 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C R
θ
JA 104 °C/W
Power Dissipation (Note 4) @ TA = 25°C PD 2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C R
θ
JA 62.5 °C/W
Power Dissipation @ TC = 25°C PD 3 W
Thermal Resistance, Junction to Case @ TC = 25°C R
θ
JA 42 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index .php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
Top View Device Schematic Pin Out Configuration
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
CC
B
E
DMJT9435
Document number: DS31622 Rev. 2 - 2 2 of 4
www.diodes.com December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO -30 ⎯ ⎯ V IC = -10mA
Emitter-Base Breakdown Voltage V
(
BR
)
EBO -6 ⎯ ⎯ V IE = -50μA
Collector-Base Cutoff Current ICER ⎯ ⎯ -20 μA VCB = -25V, RBE = 200Ω
⎯ ⎯ -200 μA VCB = -25V, RBE = 200Ω,
TA = 125°C
Emitter-Base Cutoff Current IEBO ⎯ ⎯ -10 μA VEB = -5V, IC = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE 125 ⎯ ⎯
⎯ VCE = -1V, IC = -0.8A
110 ⎯ ⎯ V
CE = -1V, IC = -1.2A
90 ⎯ ⎯ V
CE = -1V, IC = -3A
Collector-Emitter Saturation Voltage VCE(SAT)
⎯ -100 -210
mV IC = -0.8A, IB = -20mA
⎯ ⎯ -275 IC = -1.2A, IB = -20mA
⎯ -250 -550 IC = -3A, IB = -300mA
Equivalent On-Resistance RCE
(
SAT
)
⎯ 83 183
mΩ IC = -3.0A, IB = -300mA
Base-Emitter Saturation Voltage VBE
(
SAT
)
⎯ ⎯ -1.25 V
IC = -3A, IB = -300mA
Base-Emitter Turn-on Voltage VBE
(
ON
)
⎯ ⎯ -1.1 V
VCE = -4V, IC = -1.2A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT ⎯ 160 ⎯ MHz VCE = -10V, IC = -100mA,
f = 100MHz
Output Capacitance Cobo ⎯ 45 150 pF
VCB = -10V, f = 1MHz
Input Capacitance Cibo ⎯ 140 ⎯ pF VEB = -8V, f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ 200 ⎯ ns VCC = -15V, IC = -1.2A,
IB1 = -20mA
Delay Time td ⎯ 90 ⎯ ns
Rise Time t
r
⎯ 110 ⎯ ns
Turn-Off Time toff ⎯ 155 ⎯ ns VCC = -15V, IC = -1.2A,
IB1 = IB2 = -20mA
Storage Time ts ⎯ 100 ⎯ ns
Fall Time tf ⎯ 55 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
00
P , POW ER DIS SIPATION ( W )
D
T , AMBIENT TEMPERA TURE ( C)
A
°
Note 3
Fig. 1 Power Dissipation vs. Ambient Temperature
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
Note 4
-I , COLLECTOR CURRENT (A)
C
0
0.2
0.4
0.6
0.8
1.0
048121620
-V , COLLECTOR- EMI T TER VO LTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter V oltage
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
DMJT9435
Document number: DS31622 Rev. 2 - 2 3 of 4
www.diodes.com December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
10
100
1,000
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150° C
A
T = 25°C
A
T = - 55°C
A
T = 85°C
A
V = -1V
CE
0.001
0.01
0.1
1
10
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA TION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 T ypical Base-Emitter Tu rn-On Voltage
vs. Col lector Cu rre nt
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE - EM I
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -4V
CE
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Ty pical Base-Emitter Saturation V oltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
0
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 1 10 100
V , REVERSE VOL TAGE (V)
R
Fig. 7 Typical Cap acitan ce Char a cterist ics
1
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (pF)
C
ibo
C
obo
f = 1MHz
0102030405060708090100
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = -10V
f = 100MHz
CE
DMJT9435
Document number: DS31622 Rev. 2 - 2 4 of 4
www.diodes.com December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
Ordering Information (Note 6)
Part Number Case Packaging
DMJT9435-13 SOT-223 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOT-223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
ZPS33 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
A1
A
X2
C1
C2
X1
Y2
Y1
ZPS33
YWW
