PD-90495H IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 100V, P-CHANNEL POWER MOSFET THRU-HOLE (TO-254AA) REF: MIL-PRF-19500/595 HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM9140 0.20 -18A Description HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high trans conductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heat sink. This improves thermal efficiency and reduces drain capacitance. TO-254AA Features Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light Weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter Units Continuous Drain Current -18 ID @ VGS = -10V, TC = 100C Continuous Drain Current -11 ID @ VGS = -10V, TC = 25C A Pulsed Drain Current -72 Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/C Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 500 IAR Avalanche Current EAR Repetitive Avalanche Energy -18 12.5 mJ A dv/dt Peak Diode Recovery dv/dt -5.5 IDM PD @TC = 25C VGS TJ TSTG Operating Junction and Weight V/ns -55 to + 150 C Storage Temperature Range Lead Temperature mJ 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) g For Footnotes refer to the page 2. 1 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS BVDSS/TJ RDS(on) VGS(th) Gfs IDSS IGSS QG QGS QGD td(on) tr td(off) tf Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -100 --- --- --- -0.087 --- Static Drain-to-Source On-State --- --- --- --- -2.0 6.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 0.20 0.22 -4.0 --- -25 -250 -100 100 60 13 35.2 35 85 85 65 V V/C V S A nA nC ns Ls +LD Total Inductance --- 6.8 --- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1400 600 200 --- --- --- pF Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID = -11A VGS = -10V, ID = -18A VDS = VGS, ID = -250A VDS = -15V, ID = -11A VDS = -80V, VGS = 0V VDS = -80V,VGS = 0V,TJ =125C VGS = -20V VGS = 20V ID = -18A VDS = -50V VGS = -10V VDD = -50V ID = -11A RG = 9.1 VGS = -10V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pad VGS = 0V VDS = -25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -18 ISM Pulsed Source Current (Body Diode) --- --- -72 VSD Diode Forward Voltage --- --- -5.0 V TJ = 25C,IS = -18A, VGS = 0V trr Reverse Recovery Time --- --- 280 ns TJ = 25C, IF = -18A, VDD -50V Qrr Reverse Recovery Charge --- --- 3.6 C di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Min. Typ. Max. RJC Junction-to-Case Parameter --- --- 1.0 RCS Case -to-Sink --- 0.21 --- RJA Junction-to-Ambient (Typical socket mount) --- --- 48 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L = 3.1mH, Peak IL = -18A, VGS = -10V ISD -18A, di/dt -100A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2%. 2 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 3 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current Vs. Case Temperature Fig 8. Maximum Safe Operating Area Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Case Outline and Dimensions -- TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOTES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000 Data and specifications subject to change without notice. 6 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 2016-06-22