Features
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light Weight
ESD Rating: Class 2 per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -18
A
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -11
IDM Pulsed Drain Current -72
PD @TC = 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current -18
A
EAR Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery dv/dt -5.5 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 9.3 (Typical) g
°C
TO-254AA
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
1 2016-06-22
Product Summary
Part Number RDS(on) I
D
IRFM9140 0.20 -18A
POWER MOSFET
THRU-HOLE (TO-254AA)
For Footnotes refer to the page 2.
PD-90495H
Description
100V, P-CHANNEL
REF: MIL-PRF-19500/595
HEXFET MOSFET TECHNOLOGY
HEXFET MOSFET technology is the key to IR HiRel
advanced line of power MOSFET transistors. The efficient
geometry design achieves very low on-state resistance
combined with high trans conductance. HEXFET transistors
also feature all of the well-established advantages of
MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heat sink. This improves
thermal efficiency and reduces drain capacitance.
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.087 ––– V/°C Reference to 25°C, ID = -1.0mA
Static Drain-to-Source On-State ––– ––– 0.20 VGS = -10V, ID = -11A
Resistance ––– –––
0.22 VGS = -10V, ID = -18A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Gfs Forward Transconductance 6.2 ––– ––– S VDS = -15V, ID = -11A
IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -80V, VGS = 0V
––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge ––– ––– 60
nC
ID = -18A
QGS Gate-to-Source Charge ––– ––– 13 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 35.2 VGS = -10V
td(on) Turn-On Delay Time ––– ––– 35
ns
VDD = -50V
tr Rise Time ––– ––– 85 ID = -11A
td(off) Turn-Off Delay Time ––– ––– 85 RG = 9.1
tf Fall Time ––– ––– 65 VGS = -10V
Ls +LD Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance ––– 1400 –––
pF
VGS = 0V
Coss Output Capacitance ––– 600 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz
RDS(on)
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -18
ISM Pulsed Source Current (Body Diode) ––– ––– -72
VSD Diode Forward Voltage ––– ––– -5.0 V TJ = 25°C,IS = -18A, VGS = 0V
trr Reverse Recovery Time ––– ––– 280 ns TJ = 25°C, IF = -18A, VDD ≤-50V
Qrr Reverse Recovery Charge ––– ––– 3.6 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 3.1mH, Peak IL = -18A, VGS = -10V
ISD -18A, di/dt -100A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.0
°C/W
RCS Case -to-Sink 0.21 –––
RJA Junction-to-Ambient (Typical socket mount) ––– 48
Min.
–––
–––
–––
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.
Case Outline and Dimensions — TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C14.48 [.570]
12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2X
3.81 [.150]
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOTES:
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
