AOD603A
60V Complementary MOSFET
General Description Product Summary
N-Channel
P-Channel
V
DS
= 60V -60V
I
D
= 13A (V
GS
=10V) -13A (V
GS
=-10V)
R
DS(ON)
R
DS(ON)
< 60mΩ (V
GS
=10V) < 115mΩ (V
GS
=-10V)
< 85mΩ (V
GS
=4.5V) < 150mΩ (V
GS
=-4.5V)
100% UIS Tested 100% UIS Tested
100% R
g
Tested 100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
460
5.5
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
T
A
=25°C
T
C
=25°C
T
C
=100°C
Power Dissipation
B
P
D
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
T
C
=25°C
T
C
=100°C
Pulsed Drain Current
C
Continuous Drain
Current
G
mJ
Avalanche Current
C
Continuous Drain
Current A
3
Avalanche energy L=0.1mH
C
-2.5
19 25
18
The AOD603A uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Max N-channel Max P-channel
VGate-Source Voltage
Drain-Source Voltage 60 -60
±20 ±20
Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
19
50 23
MaxParameter N-channel Typ
°C
Thermal Characteristics
-55 to 175 -55 to 175Junction and Storage Temperature Range
12 -12
9.5 -9.5
30 -30
3.5 -3
31
27 42.5
13.5 21.5
2 2
1.3 1.3
Parameter P-channel Typ Max Units
°C/W
Maximum Junction-to-Ambient
A
R
θJA
19 23
Maximum Junction-to-Case 2.5 3.5 °C/W
°C/W
Maximum Junction-to-Ambient
A D
50 60
TO252-4L
DPAK
Top View Bottom View
S1
G1
D1/D2 G2
S2
D1/D2
G2
D2
S2
G1
D1
S1
N-channel
Rev 0: Sep. 2011 www.aosmd.com Page 1 of 11
AOD603A
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1 2.4 3 V
I
D(ON)
30 A
47 60
T
J
=125°C 90 110
67 85 mΩ
g
FS
22 S
V
SD
0.74 1 V
I
S
12 A
C
iss
360 450 540 pF
C
oss
40 61 80 pF
C
rss
16 27 40 pF
R
g
0.6 1.35 2 Ω
Q
g
(10V) 7.5 10 nC
Q
g
(4.5V) 3.8 5 nC
Q
gs
1.2 nC
Q
gd
1.9 nC
t
D(on)
4.2 ns
t
r
3.4 ns
t
D(off)
16 ns
t
f
2 ns
t
rr
27 35 ns
Q
rr
30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=100A/µs
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
GS
=10V, V
DS
=30V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0: Sep. 2011 www.aosmd.com Page 2 of 11
AOD603A
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
4
8
12
16
20
0 1 2 3 4 5 6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
30
40
50
60
70
80
90
100
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=8A
V
GS
=10V
I
D
=12A
40
60
80
100
120
140
160
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=12A
25°C
125°C
0
5
10
15
20
25
30
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=3.5V
4V
6V
7V
10V
4.5V
5V
25°C
Rev 0: Sep. 2011 www.aosmd.com Page 3 of 11
AOD603A
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 2 4 6 8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
100
200
300
400
500
600
700
800
0 10 20 30 40 50 60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=30V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
R
θJC
=5.5°C/W
Rev 0: Sep. 2011 www.aosmd.com Page 4 of 11
AOD603A
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
5
10
15
20
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
R
θJA
=60°C/W
1
10
100
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
Rev 0: Sep. 2011 www.aosmd.com Page 5 of 11
AOD603A
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 0: Sep. 2011 www.aosmd.com Page 6 of 11
AOD603A
Symbol Min Typ Max Units
BV
DSS
-60 V
V
DS
=-60V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.5 -2.1 -3 V
I
D(ON)
-30 A
91 115
T
J
=125°C 150 180
114 150 mΩ
g
FS
12 S
V
SD
-0.76 -1 V
I
S
-12 A
C
iss
760 960 1160 pF
C
oss
60 86 120 pF
C
rss
20 38 55 pF
R
g
3.5 7 10 Ω
Q
g
(10V) 12 15.8 20 nC
Q
g
(4.5V) 5 7.4 9 nC
Q
gs
3 nC
Q
gd
3.5 nC
t
D(on)
9 ns
t
r
10 ns
t
D(off)
25 ns
t
f
11 ns
t
rr
27.5 35 ns
Q
rr
30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=-12A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=-10V, V
DS
=-30V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=-10V, V
DS
=-30V, I
D
=-12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-12A
V
GS
=-4.5V, I
D
=-8A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
Reverse Transfer Capacitance
I
F
=-12A, dI/dt=100A/µs
V
GS
=0V, V
DS
=-30V, f=1MHz
SWITCHING PARAMETERS
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0: Sep. 2011 www.aosmd.com Page 7 of 11
AOD603A
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
3
6
9
12
15
0123456
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-I
D
(A)
70
90
110
130
150
170
190
210
230
0 5 10 15 20 25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
-I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=-4.5V
I
D
=-8A
V
GS
=-10V
I
D
=-12A
70
110
150
190
230
270
310
2 4 6 8 10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-12A
25°C
125°C
0
5
10
15
20
25
30
0 1 2 3 4 5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
-I
D
(A)
V
GS
=-3V
-3.5V
-6V
-7V
-10V
-4V
-5V
-4.5V
Rev 0: Sep. 2011 www.aosmd.com Page 8 of 11
AOD603A
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 4 8 12 16
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
0 10 20 30 40 50 60
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=-30V
I
D
=-12A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
R
θ
JC
=3.5°C/W
Rev 0: Sep. 2011 www.aosmd.com Page 9 of 11
AOD603A
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
5
10
15
20
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
R
θ
JA
=60°C/W
1
10
100
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=150°C T
A
=100°C
T
A
=125°C
Rev 0: Sep. 2011 www.aosmd.com Page 10 of 11
AOD603A
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 0: Sep. 2011
www.aosmd.com
Page 11 of 11