MMBT3906 General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE P b Lead(Pb)-Free 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Value -40 -40 -5.0 -200 Symbol Unit Vdc Vdc Vdc mAdc Max Unit 225 mW 1.8 mW/ C C/W PD R JA 556 300 PD mW 2.4 R JA 417 mW/ C C/W TJ,Tstg -55 to +150 C Device Marking MMBT3906=2A Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC=-10 Adc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE=-10 Adc, IC=0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) IBL - -50 nAdc Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) ICEX - -50 nAdc 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width < =300 S, Duty Cycle < =2.0%. WEITRON http://www.weitron.com.tw MMBT3906 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max 60 - 80 - 100 300 60 - 30 - Unit On Characteristics (3) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) HFE (IC= -100 mAdc, VCE= -1.0Vdc) - Collector-Emitter Saturation Voltage (3) (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc) VCE(sat) - -0.25 -0.4 Vdc Base-Emitter Saturation Voltage (3) (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) VBE(sat) -0.65 - -0.85 -0.95 Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) fT 250 - MHz Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Cobo - 4.5 pF Cibo - 10 pF hie 2.0 12 k ohms Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz) hre 0.1 10 x 10-4 Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz) hfe 100 400 - Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz) hoe 3.0 60 mhos Noise Figure (VCE= -5.0Vdc IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz) NF - 4.0 dB Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc) td - 35 tr - 35 (Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) ts - 225 tf - 75 3.Pulse Test:Pulse Width< = 300 S, Duty Cycle< = 2.0%. WEITRON http://www.weitron.com.tw ns ns MMBT3906 3V +9.1V 3V <1ns 275 <1ns 275 10k +0.5V 10k 0 CS<4 pF 10.6V 300 ns 10