2N5070 SILICON NPN VHF POWER TRANSISTOR 873 Emitter Internally Grounded to Case e = Intermodulation Distortion Better than 30 dB at 25 W P.E.P e Emitter Resistor Stabilised mechanical specification Pins 1,15 10/32-NF-2A- Thread All dimensions are in mm TO-60 absolute maximum ratings (Tease = 25 C) Collector-Base Voltage. 2 1. we ee 65 V Collector-Emitter Voltage (Ig =O). 6 6 6 ee ee ee ee eee) 68OV Emitter-Base Voltage 2. 2 2 1 2 ee ee 4Vv Continuous-Collector Current: 2. 8 ee ee ee ee eee OBA Continuous-Base Current 6 6. ee 1A Continuous Dissipation. 2. 2. 6 ew ee ee ee ee) TOW Operating Temperature Range 2 we we eee ee ee ee ee) BE OC to +200 OC Caution All TO-60 headers incorporate Beryllium Oxide which is a toxic white material. Suitable precautions should be taken by aif personnel handling these devices; in particular, those for disposal should not be thrown out with the general waste. In the event of the oxide being exposed or broken, avoid contact with the skin or inhaling of the dust. A service is available to customers for disposal of expended units. These must be individually wrapped securely packed and clearly labelled, and returned to the VHF Power Department at Bedford. When requiring disposal of broken units, which must not be sent through the post contact the above department for advice. PRELIMINARY DATA SHEET: Supplementary data may be published at a later date. TEXAS INSTRUMENTS 2-3512N5070 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 C case temperature (uniess otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT Vipricso Collector-Emitter Breakdown Voltage Io = 20mA 65 Vv IcEx Collector-Emitter Cutoff Current Vce = 60V, Vee =-1.5V 10 mA lEBO Emitter-Base Cutoff Current Veg =4V, Ig =0 10 mA LVcEO Coltector-Emitter Breakdown Voltage Io = 0.24, Ig =0 See Note 1 30 v 'cEO Collector-Emitter Cutoff Current Voce =30V, Ip=o 5 mA hre Static Forward Current Ic =3.0 A, VcE=5V See Note 2 10 100 Transfer Ratio Ic = 1.04, VceE=5V See Note 2 20 Common-Base Open-Circuit Cobo Output Capacitance Vep=30V, le=0, f= 1 MHz 85 PF Small Signal Common-Emitter _ _ _ Inte | Forward Current Transfer Ratio Io=10A, Vce=15V, f= 50MHz Gj Junction to Case Thermal Resistance 25 oC/W Pout RF Power Output #;=30MHz, ~ f, = 30.001 MHz 25 W PEP Imo intermodulation Distortion PIN = 1.25 WPEP, Voc = 28V See Note 3 30 aB Nc Collector Efficiency 40 % NOTES: 1. Pulse Test. Pulse Duration 5 - 10 Ms. Duty Cycle <2 %. 2. Pulse Test. Pulse Duration <300 Ms. Duty Cycle <2%. 3. Two Tone Measurement. PEP Power equals two times average power. TYPICAL TYPICAL SERIES INPUT RESISTANCE vs FREQUENCY SERIES INPUT REACTANCE vs FREQUENCY 40 bor Veg = 15V Voge =185V | tc = 50mA I = 50mA +10 30 ' V7 MN . /. $ MN 3 ee 5 b 20 =<] 3 of tt ~ a 3 5 a & 2 @ wt ~~ o a -10 er Oo -20 50 wo 200 400 sO 00 200 400 S00 Frequency - MHz Frequency - MHz FIGURE 1 FIGURE 2 2-352 TEXAS INSTRUMENTSPower Gain dB TYPICAL POWER GAIN} 2N5070 SILICON NPN VHF POWER TRANSISTOR TYPICAL NOISE FIGURE ) vs COLLECTOR CURRENT Voc =18 40 Collector Current - mA FIGURE 3 60 PARALLEL OUTPUT RESISTANCE vs FREQUENCY VCE =15 I =50mA WReal 22 - 2 x 100 Frequency - MHz FIGURE 4 TYPICAL PARALLEL OUTPUT CAPACITANCE vs FREQUENCY Imaginary 22- pF 50 100 200 400 500 Frequency - MHz FIGURE 5 TEXAS INSTRUMENTS 2-3532N5070 SILICON NPN VHF POWER TRANSISTOR ABSOLUTE MAXIMUM AREA OF OPERATION SAFE AREA OF OPERATION Tease = 25 C THERMAL DERATING 1 04 4.00 a & s \ 5 3 075 z & 3 01 2 . G 5 g : S050 N 8 3 0.04 025 N 0.01 -50 0 50 0 180 200 Collector - emitter voltage Temperatur - C FIGURE 6 FIGURE 7 To establish the absolute maximum area of operation for this device it is necessary to apply deratings both for casa temperature and voltage, proceed as follows: {1} Establish mean device dissipation and heat sink dimensions to determine the device working case temperature. {2) Read off the Power Derating Factor from Fig. 2. (3) Multiply either voltage or current rating given by Fig. 1 by the Derating Factor. This gives the volt-amp. (i.e. power) rating under the given conditions. NOTE: Where the device is subjected to power pulses of shorter duration than the thermal! time constant, operation is safe at peak power levels greater than the OC safe area of operation. . In particular under class B or C RF operation, when power pulse widths are a small fraction of the thermal time constant, dissipation is limited only by the maximum thermal resistance. TYPICAL |hggl vs COLLECTOR CURRENT TYPICAL Cogo vs COLLECTOR-BASE VOLTAGE 9 6 Vee #5V fe1MHz a es {hfe| at 200 MHz eo Copo - pF x o o 0 20 40 60 60 100 720 G 10 20 30 Collector Current mA Coltector - base voltage FIGURE 8 FIGURE 9 TEXAS INSTRUMENTS TI cannot assume any responsibility for any circuits shown 2-354 or represent that they are free from patent infringement. TEXAS INSTRUMENTS RESERVES THE AIGHT TO MAKE CHANGES AT ANY TI IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIETyp f Vcc Pin Pout BUcBO BUcEO Gehause type MHz package 2N 3137 T 250 20 0,1 0,4 40 20 TO-39 50 50 2 15 105 60 TO-60 2N 3309 250 25 0,4 2 50 30 TO-39 2N 3375 400 28 1 3 65 40 TO-60 2N 3553 175 28 0,25 2,5 60 40 TO-39 2N 3632 175 28 3,5 13,5 65 40 TO-60 2N 3733 400 28 4,0 10,0 65 40 TO-60 2N 3866 400 28 0,1 1,0 55 30 TO-39 2N 3924 175 13,6 1 4 36 18 TO-39 2N 3926 175 13,6 2 7 36 18 TO-60 2N 3927 175 13,6 4 12 36 18 TO-60 2N 4040 400 28 3 8 60 40 TO-117 2N 4041 400 28 1 3,3 60 40 JO-117 2N 4127 175 25 2,5 13,5 60 40 TO-117 2N 4128 175 25 6 24 60 40 , TO-117 2N 4427 175 12 0,1 1,0 40 20 TO-39 2N 4428 500 28 0,075 0,75 55 35 TO-39 2N 4429 1000 28 0,3 1,0 55 35 TO-117 2N 4430 1000 28 0,795 2,5 55 40 TO-129 2N 4431 1000 28 1,57 5,0 55 40 TO-129 2N 4440 400 28 1,7 5 65 40 TO-60 2N 4933 70 24 3,5 20 70 35 TO-60CE 2N 5016 400 28 5 15 65 30 TO-60CE 2N 5026 50 28 2,5 25 90 50 TO-60CE 2N 5070 30 28 25PEP 65 30 TO-60CE 2N 5071 70 28 3 24 65 30 TO-60CE 2N 5090 400 28 0,2 1,2 55 30 TO-60 2N 5102 136 24 6 15 90 50 TO-60CE 2N 5109 CATV 40 20 TO-39 2N 5179 CATV 20 12 TO-72 2N 5687 50 12,5 0,1 1,5 40 20 TO-39 2N 5688 50 12,5 0,25 5 40 20 TO-117 2N 5689 50 12,5 1,0 10 60 40 TO-117 2N 5690 50 12,5 2,5 25 50 30 TO-128 2N 5691 50 12,5 6,3 40 50 30 DIA-4L 2N 5697 470 12,5 0,05 0,25 40 18 TO-39 2N 5698 470 12,5 0,25 1,0 40 18 TO-131 2N 5699 470 12,5 1,0 3,5 40 18 TO-129 2N 5702 175 12,5 0,38 1,5 36 18 TO-39 2N 5703 175 12,5 0,475 3,0 36 18 TO-117 2N 5704 175 12,5 3,75 12,0 36 18 TO-117 2N 5705 175 12,5 10 25 36 18 TO-128 2N 5707 28 28 20PEP 70 50 TO-128 2N 5708 28 28 40PEP 70 50 TO-128 2N 5709 28 28 80PEP 70 50 DIA-4L 2N 5710 150 12,5 0,024 0,3 40 20 TO-39 2N 5711 150 12,5 0,15 1,5 60 36 TO-117 2N 5712 150 12,5 1,25 5,0 60 40 TO-117 TEXAS INSTRUMENTS 3-13