SILICON NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5594
Issue 2
Page 1 of 3
2N3700CSM
• High Voltage, Medium Power Silicon Planar NPN Transistor
• Hermetic Ceramic Surface Mount Package (SOT23 Compatible)
• High Reliability Screening Options Available
• CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 140V
VCEO Collector – Emitter Voltage 80V
VEBO Emitter – Base Voltage 7.0V
IC Continuous Collector Current 1.0A
PD Total Power Dissipation at TA = 25°C 0.5W
Derate Above TA = 25°C 2.9mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min.
Typ. Max.
Unit
RθJA Thermal Resistance, Junction To Ambient 350 °C/W
SILICON NPN TRANSISTOR
2N3700CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5594
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Unit
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 30mA IB = 0 80 V
VEB = 7.0V IC = 0 10 µA
IEBO Emitter-Base Cut-Off Current VEB = 5.0V IC = 0 10
ICES Collector-Emitter Cut-Off
Current VCE = 90V 10 nA
TA = 150°C 5
ICBO Collector-Base Cut-Off Current VCB = 140V IE = 0 10 µA
IC = 0.10mA VCE = 10V 50
IC = 10mA VCE = 10V 90
IC = 150mA VCE = 10V 100 300
TA = -55°C 40
IC = 500mA VCE = 10V 50
hFE
(1)
DC Current Gain
IC = 1.0A VCE = 10V 15
IC = 150mA IB = 15mA 0.2
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage IC = 500mA IB = 50mA 0.5
VBE(sat)
(1)
Base-Emitter
Saturation Voltage IC = 150mA IB = 15mA 1.1
V
DYNAMIC CHARACTERISTICS
IC = 50mA VCE = 10V
|hfe| Magnitude of Small-Signal
Short-Circuit Current Gain f = 20MHz
4 5 20
IC = 1.0mA VCE = 5.0V
hfe Small-Signal Short-Circuit
Current Gain f = 1.0KHz 80 400
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 12 pF
VEB = 0.5V IC = 0
Cibo Input Capacitance f = 1.0MHz 60 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON NPN TRANSISTOR
2N3700CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5594
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
2 1
0.51 ± 0.10
(0.02 ± 0.004) R0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.40
(0.055)
max.
0.31
(0.012) rad.
3
1.02 ± 0.10
(0.04 ± 0.004)
LCC1
(Underside View)
Pad 1 - Base Pad 2 – Emitter Pad 3 - Collector
