IRFE9220
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 9.1
RthJ-PCB Junction to PC Board — — 26""" Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -2.1
ISM Pulse Source Current (Body Diode) ➀— — -8.4
VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -2.1A, VGS = 0V ➃
trr Reverse Recovery Time — — 300 nS Tj = 25°C, IF = -2.1A, di/dt ≤-100A/µs
QRR Reverse Recovery Charge — — 3.0 µc VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 1.5 VGS = -10V, ID = -1.5A➃
Resistance — — 1.725 VGS = -10V, ID = -2.1A ➃
VGS(th) Gate Threshold Voltage -2.0 — - 4.0 V VDS = V GS, ID = -250µA
gfs Forward Transconductance 1.0 — — S ( ) V
DS > -15V, IDS =-1.5A➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS= 0V
— — -250 VDS =-160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS =-20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS =20V
QgTotal Gate Charge — — 15 VGS =-10V, ID= -2.1A
Qgs Gate-to-Source Charge — — 3.2 nC VDS =-100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 8.4
td(on) Turn-On Delay Time — — 50 VDD =-100V, ID = -2.1A,
trRise Time — — 70 RG =7.5Ω
td(off) Turn-Off Delay Time — — 40
tfFall Time — — 5 0
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 330 VGS = 0V, VDS = -25V
Coss Output Capacitance — 100 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 33 —
nA
Ω
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad