WFF2N60 Wisdom Semiconductor N-Channel MOSFET Features RDS(on) (Max 5.0 )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C) 2. Drain { Symbol 1. Gate{ { General Description This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. 3. Source TO-220F 1 2 3 Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol VDSS ID Value Units Drain to Source Voltage Parameter 600 V Continuous Drain Current(@TC = 25C) 2.0* A Continuous Drain Current(@TC = 100C) 1.3* A 6.0* A 30 V IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 23 W dv/dt PD TSTG, TJ TL (Note 1) Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 0.18 W/C - 55 ~ 150 C 300 C Thermal Characteristics Symbol Parameter Value Min. Typ. Max. Units RJC Thermal Resistance, Junction-to-Case - - 5.5 C/W RJA Thermal Resistance, Junction-to-Ambient - - 62.5 C/W Copyright@Wisdom Semiconductor Inc., All rights reserved. WFF2N60 Electrical Characteristics Symbol ( TC = 25 C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 600 - - V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS/ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 C - 0.6 - V/C IDSS Drain-Source Leakage Current VDS = 600V, VGS = 0V - - 10 uA IGSS VDS = 480V, TC = 125 C - - 100 uA Gate-Source Leakage, Forward VGS = 30V, VDS = 0V - - 100 nA Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA 2.0 - 4.0 V - 4.0 5.0 - 320 420 - 35 46 - 4.5 6.0 On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA RDS(ON) Static Drain-Source On-state Resistance VGS =10 V, ID = 1.0A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz pF Dynamic Characteristics td(on) tr td(off) Turn-on Delay Time VDD =300V, ID =2.0A, RG =25 Rise Time Turn-off Delay Time (Note 4, 5) - 8 30 - 23 60 - 25 60 Fall Time - 28 70 Qg Total Gate Charge - 9.5 13 Qgs Gate-Source Charge - 1.6 - Qgd Gate-Drain Charge(Miller Charge) - 4.0 - Min. Typ. Max. tf VDS =480V, VGS =10V, ID =2.0A (Note 4, 5) ns nC Source-Drain Diode Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =2.0A, VGS =0V IS=2.0A, VGS=0V, dIF/dt=100A/us NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 55mH, IAS =2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature. Copyright@Wisdom Semiconductor Inc., All rights reserved. - - 2.0 - - 6.0 Unit. A - - 1.4 V - 230 - ns - 1.0 - uC Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] 0 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o 25 C o -55 C Notes : 1. 250s Pulse Test 2. TC = 25 -1 -2 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 15 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 18 VGS = 10V 12 VGS = 20V 9 6 3 0 10 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 -1 0 1 2 3 5 6 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 600 Capacitance [pF] 4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 400 Coss 200 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 0 VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 2.0 A 0 -1 10 0 0 10 1 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 1.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 ID, Drain Current [A] ID, Drain Current [A] 1.6 100 s 1 ms 10 ms 0 10 DC -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 0.8 0.4 0.0 25 -2 10 1.2 1 2 10 3 10 10 50 Z JC(t), Thermal Response Figure 9. Maximum Safe Operating Area 10 75 100 125 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature D = 0 .5 0 N o te s : 1 . Z J C (t) = 2 .3 2 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve 10 1 150 Gate Charge Test Circuit & Waveform V G S S am eT ype asD U T 50K Q g 200nF 12V 10V 300nF V D S V G S Q gs Q gd D U T 3m A C harge Resistive Switching Test Circuit & Waveforms V D S R G R L V D S 9 0 % V D D V G S 1 0 % V G S D U T 1 0 V t d ( o n ) t r t d ( o ff) to n t f to ff Unclamped Inductive Switching Test Circuit & Waveforms B V D S S 1 2 -----------------=---- L IA E A S S 2 -V B V D S S D D L V D S B V D S S IA S ID R G 1 0 V tp V D D D U T ID(t) V (t) D S V D D tp T im e Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V SD B o d y D io d e F o r w a r d V o lt a g e D r o p V DD Package Dimensions 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 0.35 0.10 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 9.75 0.30 MAX1.47 2.76 0.20