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Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID
Continuous Drain Current(@TC = 25°C) 2.0* A
Continuous Drain Current(@TC = 100°C) 1.3* A
IDM Drain Current Pulsed (Note 1) 6.0* A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD
Total Power Dissipation(@TC = 25 °C) 23 W
Derating Factor above 25 °C 0.18 W/°C
TSTG, TJOperating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds. 300 °C
Thermal Characteristics
Symbol Parameter Value Units
Min. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - - 5.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W
WFF2N60
Features
■ RDS(on) (Max 5.0 Ω)@VGS=10V
■ Gate Charge (Typical 9.5nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Wisdom Semiconductor
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Symbol 2. Drain
3. Source
1. Gate
TO-220F
123
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V
ΔBVDSS/
ΔTJ
Breakdown Voltage Temperature
coefficient ID = 250uA, referenced to 25 °C - 0.6 - V/°C
IDSS Drain-Source Leakage Current
VDS = 600V, VGS = 0V --10uA
VDS = 480V, TC = 125 °C --100uA
IGSS
Gate-Source Leakage, Forward VGS = 30V, VDS = 0V --100nA
Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V
RDS(ON) Static Drain-Source On-state Resis-
tance VGS =10 V, ID = 1.0A -4.05.0
Ω
Dynamic Characteristics
Ciss Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-320 420
pF
Coss Output Capacitance -35 46
Crss Reverse Transfer Capacitance -4.5 6.0
Dynamic Characteristics
td(on) Turn-on Delay Time
VDD =300V, ID =2.0A, RG =25Ω
(Note 4, 5)
-830
ns
trRise Time -23 60
td(off) Turn-off Delay Time -25 60
tfFall Time -28 70
QgTotal Gate Charge
VDS =480V, VGS =10V, ID =2.0A
(Note 4, 5)
-9.5 13
nC
Qgs Gate-Source Charge -1.6 -
Qgd Gate-Drain Charge(Miller Charge) -4.0 -
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit.
ISContinuous Source Current Integral Reverse p-n Junction
Diode in the MOSFET
--2.0
A
ISM Pulsed Source Current - - 6.0
VSD Diode Forward Voltage IS =2.0A, VGS =0V - - 1.4 V
trr Reverse Recovery Time
IS=2.0A, VGS=0V, dIF/dt=100A/us
-230- ns
Qrr Reverse Recovery Charge - 1.0 - uC
WFF2N60
※NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 55mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 2.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
150℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
246810
10-1
100
150oC
25oC
-55oC Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0246810
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : I※D = 2.0 A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
200
400
600
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
Crss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0123456
0
3
6
9
12
15
18
VGS = 20V
VGS = 10V
Note : T※J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
10-1 100101
10-2
10-1
100
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :※
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resis tance Variation vs
Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID
= 1.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Not es :※
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :※
1. ZθJC(t) = 2.3 2 /W M ax.℃
2. D uty F ac to r, D = t1/t2
3. TJM - TC = PDM * ZθJC (t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
ID, Drain Current [A]
TC
, Case Temperature [ ]℃
100101102103
10-2
10-1
100
101
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC
= 25 o
C
2. TJ = 150 o
C
3. Si ngle Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
Char
g
e
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Char
g
e
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS
2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t
)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS
2
----
2
1
E
AS
=LI
AS
2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t
)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( D U T )
V
DD
Body D iode
Forw ard V olta
g
e D ro
p
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D = G a te P u ls e W id th
G ate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( D U T )
V
DD
Body D iode
Forw ard V olta
g
e D ro
p
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D = G a te P u ls e W id th
G ate Pulse Period
--------------------------
D = G a te P u ls e W id th
G ate Pulse Period
--------------------------
Package Dimensions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.1
0
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.2
0
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
