CZT2000
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2000 type is
an NPN Epitaxial Planar Silicon darlington transistor
manufactured in an epoxy molded surface mount
package, designed for applications requiring extremely
high voltages and high gain capability.
MARKING: FULL PART NUMBER
SOT-223 CASESOT-223 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 200 V
Collector-Emitter Voltage VCES 200 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 62.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=180V 500 nA
IEBO V
BE=10V 100 nA
BVCES I
C=1.0mA 200 V
VCE(SAT) I
C=20mA, IB=25µA 0.9 V
VCE(SAT) I
C=80mA, IB=40µA 1.1 V
VCE(SAT) I
C=160mA, IB=100µA 1.2 V
VBE(ON) V
CE=5.0V, IC=160mA 2.0 V
hFE V
CE=5.0V, IC=100µA 3000
hFE V
CE=5.0V, IC=10mA 3000
hFE V
CE=5.0V, IC=160mA 3000
R6 (1-March 2010)
www.centralsemi.com
CZT2000
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
SOT-223 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R6 (1-March 2010)
