BC557C - MICRO COMMERCIAL COMPONENTS

March, 2007 − Rev. 3 1Publication Order Number:

BC556B/D

BC556B, BC557A, B, C,

BC558B

Amplifier Transistors

PNP Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage BC556

BC557

BC558

VCEO −65

−45

−30

Vdc

Collector - Base Voltage BC556

BC557

BC558

VCBO −80

−50

−30

Vdc

Emitter - Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous

Collector Current − Peak IC

ICM −100

−200 mAdc

Base Current − Peak IBM −200 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ T C = 25°C

Derate above 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

12312

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 17

MARKING DIAGRAM

55xx

AYWW G

xx = 6B, 7A, 7B, 7C, or 8B

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

BC556B, BC557A, B, C, BC558B

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0) BC556

BC557

BC558

V(BR)CEO −65

−45

−30

−

Collector−Base Breakdown Voltage

(IC = −100 mAdc) BC556

BC557

BC558

V(BR)CBO −80

−50

−30

−

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0) BC556

BC557

BC558

V(BR)EBO −5.0

−5.0

−

Collector−Emitter Leakage Current

(VCES = −40 V) BC556

(VCES = −20 V) BC557

BC558

(VCES = −20 V, TA = 125°C) BC556

BC557

BC558

ICES −

−

−2.0

−

−100

−4.0

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 V) A Series Device

B Series Devices

C Series Devices

(IC = −2.0 mAdc, VCE = −5.0 V) BC557

A Series Device

B Series Devices

C Series Devices

(IC = −100 mAdc, VCE = −5.0 V) A Series Device

B Series Devices

C Series Devices

hFE −

−

120

180

420

−

150

270

−

170

290

500

120

180

300

−

800

220

460

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = see Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc)

VCE(sat) −

−

−0.075

−0.3

−0.25

−0.3

−0.6

−0.65

Base−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −100 mAdc, IB = −5.0 mAdc)

VBE(sat) −

−−0.7

−1.0 −

−

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

VBE(on) −0.55

−−0.62

−0.7 −0.7

−0.82

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556

BC557

BC558

fT−

−

280

320

360

−

MHz

Output Capacitance

(VCB = −10 V, IC = 0, f = 1.0 MHz) Cob − 3.0 6.0 pF

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 V, BC556

RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557

BC558

NF −

−

2.0

Small−Signal Current Gain

(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557

A Series Device

B Series Devices

C Series Devices

hfe 125

125

240

450

−

900

260

500

900

−

1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.

BC556B, BC557A, B, C, BC558B

http://onsemi.com

BC557/BC558

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2 −10 −100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100

IC = −200 mAIC = −50 mAIC =

−10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

VCE = −10 V

TA = 25°C

1.0

BC556B, BC557A, B, C, BC558B

http://onsemi.com

BC556

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

−0.8

−1.0

−0.6

−0.2

−0.4

1.0

2.0

−0.1 −1.0 −10 −200

−0.2

0.2

0.5

−0.2 −1.0 −10 −200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = −5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficien

IC, COLLECTOR CURRENT (mA)

−1.0

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

−0.2 −2.0 −10 −200

−1.0

TJ = 25°C

IC =

−10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = −5.0 V

TA = 25°C

0−0.5 −2.0 −5.0 −20 −50 −100

−0.05 −0.2 −0.5 −2.0 −5.0

−100 mA

−20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

−0.5 −5.0 −20 −50 −100

−55°C to 125°C

qVB for VBE

−2.0 −5.0 −20 −50 −100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

−0.1 −0.2 −1.0 −50

2.0 −2.0 −10 −100

100

200

500

6.0

4.0

−1.0 −10 −100

VCE = −5.0 V

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT

−0.5 −5.0 −20

TJ = 25°C

Cob

Cib

8.0

−50 mA −200 mA

BC556B, BC557A, B, C, BC558B

http://onsemi.com

Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10

Figure 14. Active Region − Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−200

−1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJC(t) = (t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

−100

−50

−10

−5.0

−2.0

−5.0 −10 −30 −45 −65 −100

1 s

BC558

BC557

BC556

The safe operating area curves indicate IC−VCE limits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is

variable depending upon conditions. Pulse curves are valid for

duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be

calculated from the data in Figure 13. At high case or ambient

temperatures, thermal limitations will reduce the power than can

be handled to values less than the limitations imposed by second

breakdown.

BC556B, BC557A, B, C, BC558B

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

BC556BG TO−92

(Pb−Free) 5000 Units / Bulk

BC556BZL1G TO−92

(Pb−Free) 2000 / Ammo Box

BC557AZL1G TO−92

(Pb−Free) 2000 / Ammo Box

BC557BG TO−92

(Pb−Free) 5000 Units / Bulk

BC557BRL1 TO−92 2000 / Tape & Reel

BC557BRL1G TO−92

(Pb−Free) 2000 / Tape & Reel

BC557BZL1G TO−92

(Pb−Free) 2000 / Ammo Box

BC557CG TO−92

(Pb−Free) 5000 Units / Bulk

BC557CZL1G TO−92

(Pb−Free) 2000 / Ammo Box

BC558BRLG TO−92

(Pb−Free) 2000 / Tape & Reel

BC558BRL1G TO−92

(Pb−Free) 2000 / Tape & Reel

BC558BZL1G TO−92

(Pb−Free) 2000 / Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC556B, BC557A, B, C, BC558B

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 −−−

N2.04 2.66

P1.50 4.00

R2.93 −−−

V3.43 −−−

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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Phone: 81−3−5773−3850

BC556B/D

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