mg 2142799 GO0080S 7 mm T-4r&l CLALREX ELECTRONICS DIV 19E D CLM3700 Dre PHOTOCELL LEADS 1" MIN, 200 / =. N eon = 5 | TINNED COPPER .020 DIA. 420 240 CLM3700 Photoconductor ety wr Toe LAMP LEADS 46 MIN. Is ol ators 445 -o] [+595 ey DUMET WIRE .015 DIA. CLM3700 Features a low voltage neon lamp with high input impedance ideal for telecommunications, r-f--h 4 ring signal detection (telephone lines) can also be operated at low current drives with minimum photo- \ cell resistance modulation. tio NE PC |__CLM 370 NEON LAMP CHARACTERISTICS TEST CONDITIONS | Min. Typ. Max. UNITS I Design Current 0.3 mA DC vi Initial breakdown 60-80 volts DC Vin Initial Maintaining 52-62 volts DC PHOTOCELL volts Vesax Cell voltage 250 DC or PAC P Power dissipation 25C 100 milliwatts PHOTOMOD i (lamp current) Ron mA (1)(2) | On resistance -1000 ohms Rore 10 sec. after Ip + 0 1 Meg. ohms Off resistance 4 VDC on cell tr Rise time time to 63% of 100 milliseconds final condition at lp = 0.3mA to Decay time Time to 100K 500 milliseconds Veo Isolation 1600. volts OC or PAC dRe/dt Cell temperature Ip > 0.3mA 0.6 B/C coefficient Temperature Storage 40C to 75C NOTES: Absolute Maximum Ratings: (1) Measured after > 24 hrs. OFF + Imin. ON (2) External series resistor required. 8-19 Operating Derate power to 0 at 75C& & & BE CLAIREX ELECTRONICS DIV 2 PHOTOCELL RESISTANCE Vs LAMP CURRENT Tas25 PHOTOCELL RESISTANCE KOHMS L9 D MM 2142799 00008095 5 oe THE cLM3700 100 Ol 1 10 RISEO 10 20 30 40 50 60 70 LAMP CURRENT~-(I;) MILLIAMPERES DECAY O 200 400 600 g00 61000) 61200, 140C MILLISECONDS TIME AFTER APPLICATION OR REMOVAL OF INPUT -20