C450EZ400-S09000-2 - Cree, Inc.

Subject to change without notice.

www.cree.com

FEATURES

• EZBrightPowerChipLEDRfPerformance

– 90mWmin.@150mA–450&460nm

– 75mWmin.@150mA-470nm

– 25mWmin.@150mA-527nm

• LambertianRadiation

• ConductiveEpoxy,SolderPasteorPreforms,

orFluxEutecticAttach

• LowForwardVoltage–3.5VTypicalat150mA

• SingleWireBondStructure

• MaximumDCForwardCurrent-200mA

● DielectricPassivationAcrossEpiSurface

APPLICATIONS

• GeneralIllumination

– Automobile

– Aircraft

– DecorativeLighting

– TaskLighting

– OutdoorIllumination

• WhiteLEDs

• CrosswalkSignals

• TelevisionBacklighting

Cree® EZ400™ Gen II LED

Data Sheet

CxxxEZ400-Sxxx00-2

Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efcient InGaN

materialswithCree’sproprietaryopticaldesignanddevicetechnologytodeliversuperiorvalueforhigh-intensityLEDs.

TheopticaldesignmaximizeslightextractionefciencyandenablesaLambertianradiationpattern.Additionally,these

LEDsaredieattachablewithconductiveepoxy,solderpasteorsolderpreforms,aswellastheuxeutecticmethod.

Theseverticallystructured,lowforwardvoltageLEDchipsareapproximately170micronsinheight.Cree’sEZ™chips

aretestedforconformitytoopticalandelectricalspecications.TheseLEDsareusefulinabroadrangeofapplications,

suchasgeneralillumination,automotivelightingandLCDbacklighting.

CxxxEZ400-Sxxx00 Chip Diagram



Top View Bottom View

EZBrightLEDChip

380x380μm2

t=170μm

Backside

Metallization

GoldBondPad

112μm

Die Cross Section

Anode(+);

3μmAuSn

Cathode(-)

Data Sheet: CPR3ED Rev. -

DielectricPassivation

Copyright©2009Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe

Creelogoareregisteredtrademarks,andEZBright,EZ,andEZ400aretrademarksofCree,Inc.

2CPR3ED Rev. -

Cree,Inc.

4600SiliconDrive

Durham,NC27703

USATel:+1.919.313.5300

www.cree.com

Maximum Ratings at TA = 25°C Note 1 CxxxEZ400-Sxxx00-2

DCForwardCurrent 200mA

PeakForwardCurrent 350mANote3

LEDJunctionTemperature 145°C

ReverseVoltage 5V

OperatingTemperatureRange -40°Cto+100°C

StorageTemperatureRange -40°Cto+120°C

Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Note 2

Part Number Forward Voltage (VF, V) Reverse Current

[I(Vr=5 V), μA]

Full Width Half Max

(λD, nm)

Min. Typ. Max. Max. Typ.

C450EZ400-Sxxx00-2 3.1 3.5 4.1 2 20

C460EZ400-Sxxx00-2 3.1 3.5 4.1 2 21

C470EZ400-Sxxx00-2 3.1 3.5 4.1 2 24

C527EZ400-Sxxx00-2 3.2 3.7 4.2 2 35

Mechanical Specications CxxxEZ400-Sxxx00-2

Description Dimension Tolerance

P-NJunctionArea(µm) 350x350 ±40

ChipArea(µm) 380x380 ±40

ChipThickness(µm) 170 ±25

TopAuBondPadDiameter(µm) 112 ±15

AuBondPadThickness(µm) 3.0 ±1.0

BackContactMetalArea(µm) 380x380 ±40

BackContactMetalThickness(µm) 3.0 ±1.0

Notes:

1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an

encapsulantforcharacterization.Ratingsforotherpackagesmaydiffer.Thejunction temperatureshouldbecharacterizedina

specic package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree

EZBrightApplicationsNoteforassembly-processinformation.

2. Allproductsconformtothelistedminimumandmaximumspecicationsforelectricalandopticalcharacteristicswhenassembled

and operated at 150 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values

givenarewithintherangeofaverage expectedbythemanufacturerinlargequantitiesandareprovidedforinformationonly.

All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an

integratingsphereusingIlluminanceE.

3. This peak forward current specication is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of

65°C.

Copyright©2009Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe

Creelogoareregisteredtrademarks,andEZBright,EZ,andEZ400aretrademarksofCree,Inc.

3CPR3ED Rev. -

Cree,Inc.

4600SiliconDrive

Durham,NC27703

USATel:+1.919.313.5300

www.cree.com

Standard Bins for CxxxEZ400-Sxxx00-2

LED chips are sorted to the radiant ux and dominant wavelength bins shown. A sorted die sheet contains die

fromonlyonebin.Sorteddiekit(CxxxEZ400-Sxxx00-2)ordersmaybelledwithanyorallbins(CxxxEZ400-0xxx-2)

containedinthekit.AllradiantuxandalldominantwavelengthvaluesshownandspeciedareatIf=150mA.Radiant

uxvaluesaremeasuredusingAu-platedTO39headerswithoutanencapsulant.

C450EZ400-S09000-2

C450EZ400-0213-2 C450EZ400-0214-2 C450EZ400-0215-2 C450EZ400-0216-2

C450EZ400-0209-2 C450EZ400-0210-2 C450EZ400-0211-2 C450EZ400-0212-2

C450EZ400-0205-2 C450EZ400-0206-2 C450EZ400-0207-2 C450EZ400-0208-2

120mW

105mW

90mW

Dominant Wavelength

Radiant Flux

447.5nm 450nm 452.5nm445nm 455nm

C460EZ400-S09000-2

C460EZ400-0213-2 C460EZ400-0214-2 C460EZ400-0215-2 C460EZ400-0216-2

C460EZ400-0209-2 C460EZ400-0210-2 C460EZ400-0211-2 C460EZ400-0212-2

C460EZ400-0205-2 C460EZ400-0206-2 C460EZ400-0207-2 C460EZ400-0208-2

120mW

105mW

90mW

Dominant Wavelength

Radiant Flux

457.5nm 460nm 462.5nm455nm 465nm

C470EZ400-S07500-2

C470EZ400-0209-2 C470EZ400-0210-2 C470EZ400-0211-2 C470EZ400-0212-2

C470EZ400-0205-2 C470EZ400-0206-2 C470EZ400-0207-2 C470EZ400-0208-2

C470EZ400-0201-2 C470EZ400-0202-2 C470EZ400-0203-2 C470EZ400-0204-2

105mW

90mW

75mW

Dominant Wavelength

Radiant Flux

467.5nm 470nm 472.5nm465nm 475nm

C527EZ400-S2500-2

C527EZ400-0207-2 C527EZ400-0208-2 C527EZ400-0209-2

C527EZ400-0204-2 C527EZ400-0205-2 C527EZ400-0206-2

C527EZ400-0201-2 C527EZ400-0202-2 C527EZ400-0203-2

50mW

40mW

25mW

Dominant Wavelength

Radiant Flux

525nm 530nm 535nm520nm

Copyright©2009Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe

Creelogoareregisteredtrademarks,andEZBright,EZ,andEZ400aretrademarksofCree,Inc.

4CPR3ED Rev. -

Cree,Inc.

4600SiliconDrive

Durham,NC27703

USATel:+1.919.313.5300

www.cree.com

Characteristic Curves

ThesearerepresentativemeasurementsfortheEZBright400.Actualcurveswillvaryslightlyforthevariousradiantux

anddominantwavelengthbins.

100

125

150

175

200

0 1 2 3 4 5

If (mA)

Vf (V)

Forward Current vs. Forward Voltage

25%

50%

75%

100%

125%

150%

0 25 50 75 100 125 150 175 200 225

Relative Intensity

If (mA)

Relative Intensity vs. Forward Current

-8

-4

0 25 50 75 100 125 150 175 200 225

DW Shift (nm)

If (mA)

Wavelength Shift vs. Forward Current

25%

50%

75%

100%

125%

150%

0 25 50 75 100 125 150 175 200 225

Relative Intensity

If (mA)

Relative Intensity vs. Forward Current

-8

-4

0 25 50 75 100 125 150 175 200 225

DW Shift (nm)

If (mA)

Wavelength Shift vs. Forward Current

Mean(Vf Shift) EZ400

65%

70%

75%

80%

85%

90%

95%

100%

25 50 75 100 125 150

Relative Light Intensity

Junction Temperature (°C)

Relative Light Intensity vs Junction Temperature

-2

-1

25 50 75 100 125 150

Dominant Wavelength Shift (nm)

Junction Temperature (°C)

Dominant Wavelength Shift vs Junction Temperature

Mean(Vf Shift) EZ400

65%

70%

75%

80%

85%

90%

95%

100%

25 50 75 100 125 150

Relative Light Intensity

Junction Temperature (°C)

Relative Light Intensity vs Junction Temperature

-2

-1

25 50 75 100 125 150

Dominant Wavelength Shift (nm)

Junction Temperature (°C)

Dominant Wavelength Shift vs Junction Temperature

Mean(Vf Shift)

-0.600

-0.500

-0.400

-0.300

-0.200

-0.100

0.000

0.100

25 50 75 100 125 150

Voltage Shift (V)

Junction Temperature (°C)

Voltage Shift vs Junction Temperature

Creelogoareregisteredtrademarks,andEZBright,EZ,andEZ400aretrademarksofCree,Inc.

5CPR3ED Rev. -

Cree,Inc.

4600SiliconDrive

Durham,NC27703

USATel:+1.919.313.5300

www.cree.com

Radiation Pattern

ThisisarepresentativeradiationpatternfortheEZBrightPowerChipLEDproduct.Actualpatternswillvaryslightlyfor

eachchip.