Adiitron SDIM25B120A Devices, inc. FEATURES: PACKAGE: 10A, 1200 V at Tc = 110C . 3 Phase Output Inverter with Fast Free-Wheel Diodes Insulated Metal Baseplate * 1200 V Switching SOA Capability Short Circuit Rated * Low On-State Saturation Voltage Designed to meet VDE and UL Designed, manufactured, assembled and tested under 1SO9001 certified quality management system Package Designation B Absolute Maximum Ratings Tc = 25C, Unless Cth Specified Y Value Unit Collector Emitter Voltage ecesesecasecscessensecseesseasseneseeeesecsues 4. 8 VecEs - 1200 Vv Collector Current eset Bo Los 25 A Pulsed (Note 1) goes LOM 80 A Collector Current @ 110C | eS, / Continuous .............. a, Se seceeseesseees Ie110 10 A Pulsed (Note 1)............94 Bec ccccsccssecenssesseeesnes low A Gate Emitter Voltage Continuous ......,-...0.. Bh csscsccccssssesssssnseees Vogs +20 V Gate Emitter Voltage Pulsed ....... stg. Misge + 30 V 50 A @ 1200 V 8 ps 15 ps 2500 VAC -40TO100 C - -40T0150 C 16 mm 1] mm S| be epetitive Boe Pulse width limited ed by maximum junction temperature_Aalitron SDIM25B120A Devices, Inc. Electrical Specifications Tc = 25C, Unless otherwise specified OUTPUT INVERTER | SYMBOL TEST CONDITIONS MIN. | TYP. | MAX. | UNIT | Collector Emitter Breakdown Voltage = GE= 1200 - V Collector Emitter Leakage Current Icgs Vor = BVcgs, Te = 25C - 250 | pA | Collector Emitter Leakage Current Ices Vou = BVcgs, Te = 150C _ 70 | mA Collector Emitter Saturation Voltage | Vcesar Ic = 10 A, Vgg= 15 V, Te = 25C - 2.5 2.7 Vv Collector Emitter Saturation Voltage | Vcegan Ic = 10A, Vgg = 15 V, Te = 150C - 3.7 4.2 Vv Gate Emitter Threshold Voltage VoEcrH) Ig = 250 pA, Vee = Vag 6.0 7.5 - Vv Gate Emitter Leakage Current IcEs Vog= +20 V - +250 | nA Switching SOA ssoa | 127 OC-RG= 109 Vag= Io : - - A Switching SOA SSOA 50 - A Gate Emitter Plateau Voltage VGEP ~ 10.9 - Vv On State Gate Charge Qs(on) - 100 115 nC On State Gate Charge Qson) - 125 150 aC Current Turn On Delay ta(ONn) ~ 24 29 ns Current Rise Time Gi - 12 15 ns Current Turn Off Delay ta(OFF) - 190 220 ns Current Fall Time ta - 160 200 ns Turn On Energy Eon - 400 | 500 ww Turn Off Energy Eorr - 1560 | 2000 wy Diode Forward Voltage Vie IF=15A - 3.2 - Vv Diode Reverse Recovery Time . 4# | 8 Ip=1 A, di/dt=200 A/us - 65 - ns Diode Reverse Recovery Time Sete Ip= 15 A, di/dt = 200 A/fis - 75 - DS Thermal Resistance % Regg IGBT - 0.9 - | crw Thermal Resistance DIODE - 1.6 ~ CIW ~ Package Pin Ou & Cc ce] e Pe 7 SS, 2 5 Fe , , | 123456 78 90 N21 (9)SDIM25B120A sek my a ek Aolitron litron ~~ Devices, Inc. P+ ion Bimensional Outline 0.01 3.81 11.43 x 11.43 = 57.15 93 + 0.2 _-____"_4 ______-_ 107.5