1N5391/S–1N5399/S
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
1.5A Rectifier
Features
D
Diffused junction
D
Fast switching for high efficiency
D
High current capability and low forward
voltage drop
D
Surge overload rating to 50A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0
14 450
DO – 15
DO – 41
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage 1N5391/S VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
1N5392/S
RRM
=VRWM
V
100 V
=DC Blocking voltage 1N5393/S =VR200 V
1N5395/S 400 V
1N5397/S 600 V
1N5398/S 800 V
1N5399/S 1000 V
Peak forward surge current IFSM 50 A
Average forward current TA=70
°
C IFAV 1.5 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
CParameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1.5A VF1.1 V
Reverse current TA=25
°
C IR5 mA
TA=100
°
C IR50 mA
Diode capacitance VR=4V, f=1MHz CD20 pF
Thermal resistance junction to lead RthJL 25 K/W
Thermal resistance junction to ambient RthJA 55 K/W
1N5391/S–1N5399/S
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
25 50 75 100 125 150 175
0
0.5
1.0
1.5
15575 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.01
0.1
1.0
10
0.6 0.8 1.0 1.2 1.4 1.6
15576
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
IF Pulse Width = 300 µs
Tj = 25°C
Duty Cycle ≤2%
Figure 2. Typ. Forward Current vs. Forward Voltage
1.0 10 100
0
10
20
30
40
50
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15577
8.3 ms Single Half–Sine–W ave
JEDEC method
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
1.0
10
100
1.0 10 100
Tj = 25°C
f = 1 MHz
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15578
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
1N5391/S–1N5399/S
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14446
Case: molded plastic
Polarity: cathode band
Approx. weight: DO–41 0.30 grams,
DO–15 0.40 grams
Mounting position: any
Marking: type number
1N5391/S–1N5399/S
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
