Continental Device India Limited Data Sheet Page 2 of 3
Emitter base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 8.0 A
Collector current (Peak value) ICmax. 16 A
Base current IBmax. 2.0 A
Total power dissipation up to TC = 25°C Ptot max. 50 W
Derate above 25°C max. 0.4
W/°C
Total power dissipation up to TA = 25°C Ptot max. 2.0 W
Derate above 25°C max. 0.016
W/°C
Junction temperature Tjmax. 150
ºC
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c = 2.5
°C/W
From junction to ambient Rth j–a = 62.5
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 15028 15030
15029 15031
Collector cutoff current
IB = 0; VCE = 120V ICEO max. 0.1 – mA
IB = 0; VCE = 150V ICEO max. – 0.1 mA
IE = 0; VCB = 120V ICBO max. 10 – µA
IE = 0; VCB = 150V ICBO max. – 10 µA
Emitter cut-off current
IC = 0; VEB = 5V IEBO max. 10 µA
Breakdown voltages
IC = 10 mA; IB = 0 VCEO(sus)* min. 120 150 V
IC = 1 mA; IE = 0 VCBO min. 120 150 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 1 A; IB = 0.1 A VCEsat* max. 0.5 V
Base emitter on voltage
IC = 1A; VCE = 2V VBE(on)* max. 1.0 V
D.C. current gain
IC = 0.1 A; VCE = 2 V hFE* min. 40
IC = 2 A; VCE = 2 V hFE* min. 40
IC = 3 A; VCE = 2 V hFE* min. 40
IC = 4 A; VCE = 2 V hFE* min. 20
Transition frequency f = 10 MHz
IC = 500 mA; VCE = 10 V fT(1) min. 30 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
MJE15028, MJE15030
MJE15029, MJE15031