A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 35 V
BVCER IC = 50 mA RBE = 10 Ω 60 V
BVEBO IE = 10 mA 4.0 V
ICES VE = 28 V 5.0 mA
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz 5.0 pF
PGE VCE = 20 V ICQ = 150 mA f = 1.0 GHz
POUT = 1.0 W 10 dB
NPN SILICON RF POWER TRANSISTOR
MLN1030SS
DESCRIPTION:
The ASI MLN1030SS is Designed
for Class A Linear Applications up
to 1.0 GHz.
FEATURES:
• Class A Operation
• PG = 10 dB at 1.0 W/1.0 G Hz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE 35 V
PDISS 140 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 20 °C/W
PACKAGE STYLE .205 4L STUD
ORDER CODE: ASI10625
A
B
H
E
F
.0 9 8 / 2 .500
.1 6 1 / 4 .100
.0 2 8 / 0 .700
.9 7 6 / 2 4.80 0
.1 3 8 / 3 .500
.9 7 6 / 2 4.80 0
inch e s / m m
MINIMUM
A
G
F
E
D
C
B
1.000 / 25.4000
.1 1 0 / 2 .800
.1 9 6 / 5 .000
1.000 / 25.4000
MAXIMUM
inch e s / m m
.0 3 1 / 0 .800
C
D
H
I
J.2 0 0 / 5 .100
.4 2 5 / 1 0.80 0
.004 / 0.100 .006 / 0.150
.4 6 5 / 1 1.80 0
2.05 / 5.200
G
J
#8-32UNC
.200 / 5.100 .208 / 5.300
DIM
