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© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:
January 2017 - Rev. P0 FODM217/D
FODM217 Series
Single Channel, DC Sensing Input,
Phototransistor Optocoupler In
Half-Pitch Mini-Flat 4-Pin Package
The FODM217 Series single channel, DC sensing input, optocoupler
consists of one gallium arsenide (GaAs) infrared light emitting diode
optically coupled to one phototransistor, in a compact, half-pitch,
mini-flat, 4-pin package. The input-output isolation voltage, VISO, is
rated at 3,750 VACRMS.
Features
• Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA,
VCE = 5 V, TA = 25ºC
- FODM217A - 80 to 160%
- FODM217B - 130 to 260%
- FODM217C - 200 to 400%
- FODM217D - 300 to 600%
• Safety and Regulatory Approvals:
- UL1577, 3750 VACRMS for 1 min
- DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
• Applicable to Infrared Ray Reflow, 260ºC
Typical Applications
• Primarily Suited for DC-DC Converters
• For Ground Loop Isolation, Signal to Noise Isolation
• Communications – Adapters, Chargers
• Consumer – Appliances, Set Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic
Control
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SOP 4 PINS
MARKING DIAGRAM
1. F = Corporate Logo
2. 217x = Device Number
3. V = DIN EN/IEC60747-5-5 Option
4. X = One-Digit Year Code
5. YY = Digit Work Week
6. R1 = Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 9 of this data sheet.
FODM217 Series
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2
SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and
Sample Test with tm = 10 s, Partial Discharge < 5 pC
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100%
Production Test with tm = 1 s, Partial Discharge < 5 pC
Vpeak
VIORM
Maximum Working Insulation Voltage
Vpeak
VIOTM
Highest Allowable Over-Voltage
Vpeak
External Creepage
mm
External Clearance
mm
DTI
Distance Through Insulation (Insulation Thickness)
mm
TS
Case Temperature (Note 1)
°C
IS,INPUT
Input Current (Note 1)
mA
P
S,OUTPUT
Output Power (Note 1)
mW
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
Ω
1. Safety limit values – maximum values allowed in the event of a failure.
FODM217 Series
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3
ABSOLUTE MAXIMUM RATINGS (Note 2)
TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-55 to +150
°C
TOPR
Operating Temperature
-55 to +110
°C
TJ
Junction Temperature
-55 to +125
°C
TSOL
Lead Solder Temperature
(Refer to Reflow Temperature Profile)
260 for 10 sec
°C
Emitter
IF(average)
Continuous Forward Current
50
mA
IF(peak)
Peak Forward Current (1 µs pulse, 300 pps)
1
A
VR
Reverse Input Voltage
6
V
PDLED
Power Dissipation (Note 3)
70
mW
Detector
I
C(average)
Continuous Collector Current
50
mA
VCEO
Collector-Emitter Voltage
80
V
VECO
Emitter-Collector Voltage
7
V
PDC
Collector Power Dissipation (Note 3)
150
mW
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
FODM217 Series
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4
TRANSFER CHARACTERISTICS
TA=25ºC unless otherwise specified
Symbol
Parameter
Device
Conditions
Min.
Typ.
Max.
Units
CTRCE
Current Transfer Ratio
(collector-emitter)
FODM217A
IF = 5 mA, VCE = 5 V
80
160
%
FODM217B
130
260
FODM217C
200
400
FODM217D
300
600
IC
Collector Current
All
IF = 5 mA, VCE = 5 V
4
30
mA
CTR(SAT)
Saturated Current Transfer
Ratio
All
IF = 8 mA, VCE = 0.4 V
60
%
IC(SAT)
Collector Current
All
IF = 8 mA, VCE = 0.4 V
4.8
mA
VCE(SAT)
Collector-Emitter
Saturation Voltage
All
IF = 8 mA, IC = 2.4 mA
0.4
V
SWITCHING CHARACTERISTICS
TA=25ºC unless otherwise specified
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
tON
Turn On Time
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
3
µs
tOFF
Turn Off Time
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
3
µs
tR
Output Rise Time (10% -90%)
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
2
µs
tF
Output Fall Time (90% -10%)
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
3
µs
ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VISO
Input-Output Isolation Voltage
Freq = 60 Hz, t = 1.0 min,
II-O ≤ 10 µA (Note 4,5)
3,750
VACRMS
RISO
Isolation Resistance
VI-O = 500 V (Note 4)
5 x 1010
Ω
CISO
Isolation Capacitance
Frequency = 1 MHz
0.6
1.0
pF
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Emitter
VF
Forward Voltage
IF = 20 mA
1.2
1.4
V
IR
Reverse Current
VR = 4 V
10
µA
CT
Terminal Capacitance
V = 0 V, f = 1 kHz
30
250
pF
Detector
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 0.1 mA, IF = 0 mA
80
V
BVECO
Emitter-Collector Breakdown
Voltage
IE = 10 µA, IF = 0 mA
7
V
ICEO
Collector Dark Current
VCE = 50 V, IF = 0 mA
100
nA
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.
FODM217 Series —
Single Channel Phot
otransistor
Optocoupler In Half-Pitch Small Outline SO4
Package
FODM217 Series
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5
TYPICAL CHARACTERISTICS
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
Figure 2. LED Power Dissipation vs. Ambient
Temperature
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
Figure 5. Collector Emitter Voltage vs. Forward Current
Figure 6. Collector Current vs. Collector-Emitter Voltage
025 50 75 100 125
0
20
40
60
80
100
120
140
160
TA - AMBIENT TEMPERATURE (°C)
PDC - COLLECTOR POWER DISSIPATION (mW)
025 50 75 100 125
0
20
40
60
80
TA - AMBIENT TEMPERATURE (°C)
PDLED - LED POWER DISSIPATION (mW)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
100
75°C
-55°C
25°C
110°C
IF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
110 100
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
ΔVF/ΔTA - FORWARD VOLTAGE
TEMPERATURE COEFFICIENT (mV/°C)
IF - FORWARD CURRENT (mA)
0 5 10 15 20
0
1
2
3
4
5
10 mA
7 mA
5 mA
3 mA
1 mA
VCE - COLLECTOR-EMITTER VOLTAGE (V)
IF - FORWARD CURRENT (mA)
0.5 mA
0 5 10
0
10
20
30
40
50
IC - COLLECTOR CURRENT (mA)
VCE - COLLECTOR-EMITTER VOLTAGE (V)
IF = 5 mA
FODM217 Series
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6
Figure 7. Collector Current vs. Small Collector-Emittter
Voltage
Figure 8. Collector Current vs. Forward Current
Figure 9. Collector Dark Current vs. Ambient
Temperature
Figure 10. Current Transfer Ratio vs. Forward Current
Figure 11. Collector-Emitter Saturation vs. Ambient
Temperature
Figure 12. Collector Current vs. Ambient Temperature
0.0 0.5 1.0
0
10
20
30
40
50
IC - COLLECTOR CURRENT (mA)
VCE - COLLECTOR-EMITTER VOLTAGE (V)
IF = 5 mA
0.0001 0.001 0.01 0.1
0.0001
0.001
0.01
0.1 10 V 5 V
IC - COLLECTOR CURRENT (A)
IF - FORWARD CURRENT (mA)
VCE = 0.4 V
-25 0 25 50 75 100
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
24 V
10 V
5 V
ICEO - COLLECTOR DARK CURRENT (A)
TA - AMBIENT TEMPERATURE (°C)
VCE = 48 V
0.0001 0.001 0.01 0.1
10
100
1000
10 V
5 V
CTR - CURRENT TRANSFER RATIO (%)
IF - FORWARD CURRENT (A)
VCE = 0.4 V
-25 0 25 50 75 100
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
IF = 20 mA
IC = 1 mA
IF = 1 mA
IC = 0.2 mA
VCE(SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA - AMBIENT TEMPERATURE (°C)
IF = 8 mA
IC = 2.4 mA
-25 0 25 50 75 100
0.1
1
10
100
20 mA
10 mA
5 mA
1 mA
IF = 0.5 mA
IC - COLLECTOR CURRENT (mA)
TA - AMBIENT TEMPERATURE (°C)
FODM217 Series
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7
Figure 13. Switching Time vs. Load Resistance
Figure 14. Switching Time vs. Ambient Temperature
TEST CIRCUIT
1
2
4
3
RM
RL
VCC
IF Monitor
VO
VO
IF
90%
10%
tON tOFF
tR tF
Figure 15. Test Circuit for Switching Time
110 100
0.1
1
10
100
1000 TA = 25 °C
VCC = 5 V
IF = 16 mA tF
tR
tOFF
tON
t - SWITCHING TIME (µs)
RL - LOAD RESISTANCE (k)
-25 0 25 50 75 100
1
10
100 VCC = 10 V
IC = 2 mA
RL = 100
tF
tR
tOFF
tON
t - SWITCHING TIME (µs)
TA - AMBIENT TEMPERATURE (°C)
FODM217 Series
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8
REFLOW PROFILE
Figure 36. Reflow Profile
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
FODM217 Series
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9
ORDERING INFORMATION (Note 6)
Part Number
Package
Packing Method
FODM217A
SOP 4-Pin
Tube (100 units)
FODM217AR2
SOP 4-Pin
Tape and Reel (3000 units)
FODM217AV
SOP 4-Pin, DIN EN/IEC60747-5-5 Option
Tube (100 units)
FODM217AR2V
SOP 4-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (3000 units)
6.The product orderable part number system listed in this table also applies to the FODM217B, FODM217C, and FODM217D products.
1.27
1.52
4.837.87
0.61
TOP VIEW
FRONT VIEW SIDE VIEW
LAND PATTERN RECOMMENDATION
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
D. DRAWING FILENAME: MKT-MFP04DrevA
1
3
2
4
2.60±0.30
2.00±0.20
0.1±0.10
1.27±0.25
4.40±0.20
0.40±0.10
5.44±0.30
7±0.45
0.25±0.05
DETAIL A
SEATING
PLANE
MIN 0.5
0.127
4°
1.30±0.30
GAGE
PLANE
DETAIL A
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1
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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