©2000 Fairchild Semiconductor International Rev. A, February 2000
BD175/177/179
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
* Classification 16: Only BD175
Symbol Parameter Value Units
VCBO *Collector-Base Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
VCEO Collector-Emitter Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 3 A
ICP *Collector Current (Pulse) 7 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD175
: BD177
: BD179
IC = 100mA, IB = 0 45
60
80
V
V
V
ICBO Collector Cut-off Current : BD175
: BD177
: BD179
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
100
100
100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = 5V, IC = 0 1 mA
hFE1
hFE2
* DC Current G ain VCE = 2V, IC = 150mA
VCE = 2V, IC = 1A 40
15 250
VCE(sat) * Collect or-Emitter Satu rat ion Voltage IC = 1A, IB = 0.1A 0.8 V
VBE(on) * Base-Emitter On Voltage VCE = 2V, IC = 1A 1.3 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 250mA 3 MHz
Classification 6 10 16
hFE1 40 ~ 100 63 ~ 160 100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD175/177/179
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 10
1
10
100
1000 VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100
0.1
1
10
IC MAX. (Contin uous)
BD179
BD177
BD175
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD175/177/179
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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not intended to be an exhaustive list of all such trademarks.
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FAST®
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ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
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SyncFET™
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As used herein:
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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BD17516STU Full Production $0.18 TO-126 3 RAIL
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