• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT907-1061T
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
Bandwidth: 0.80 GHz to 1.0 GHz
1.0 dB Insertion Loss, Typical
12 dB Return Loss, Typical
25 dB Attenuation, Typical
50 dBm Input IP3, Typical (1MHz Offset,
@+0dBm Pinc)
0 – 3.0 Volts Control Voltage @3.3mA Typical
RoHs Compliant
Extra Features
Covers the following Bands:
GSM
AMPS
Usable Bandwidth: 0.60 GHz to 1.20 GHz
1.5 dB Insertion Loss, Typical
1.8:1 VSWR, Typical
18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT907-1061T is a HMIC PIN Diode
Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as D.C.
Voltage (Current) is applied.
This device operates from 0 to 2.77Volts at 3.0mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT907-1061T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
Lower Insertion Loss
Lower distortion through attenuation
Larger dynamic range for wide spread spectrum
applications
Absolute Maximum Ratings @ +25 °C 1,2
Parameter Maximum Ratings
Operating Temperature -40 °C to +85 °C
Storage Temperature -65 °C to +150 °C
Junction Temperature +175 °C
RF C.W. Incident Power +33 dBm C.W.
Reversed Current @ -30 V 50nA
Control Current 50 mA per Diode
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
SOIC-8 PIN Configuration (Topview)
PIN Function Comments
1 DC1
2 GND
3 GND
4 RFin/out Symetrical as RF Input/Ouput
5 RFout/in Symetrical as RF Input/Ouput
6 GND
7 GND
8 DC2
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT907-1061T
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance Over Industry Designated RF Frequency Bands
Band Freq I. Loss Att. R. Loss IIP3 Phase
-Relative-
(MHz) (dB) (dB) (dB) (dBm) (Degree)
AMPS
RX 824-849 0.9 22 12 50
-15°
TX 869-894 0.9 22 12 50
GSM
RX 880-915 1.2 20 11 50
-20°
TX 925-960 1.2 20 11 50
Electrical Specifications @ +25 °C
Parameter Frequency Band Unit Min Typ Max
Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Insertion Loss 0.80 GHz—1.00 GHz dB - 1.0 1.2
Input Return Loss dB 11 12 -
Output Return Loss dB 11 12 -
P1dB dBm 30 - -
Input IP3 dBm 45 49 -
Control Voltage V - 0 V @ OuA -
Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Maximum Attenuation 0.80 GHz—1.00 GHz dB 18.5 24 -
Input Return Loss @ Max Attenuation dB 15 21 -
Output Return Loss @ Max Attenuation dB 15 21 -
Input IP3 dBm 36 39 -
Control Voltage @ Max Attenuation V - 3.0 V @ 3.35 mA -
3. All are typical values only.
4. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation.
(Please refer to the plots below)
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT907-1061T
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Plots of Typical RF Characteristics @ +25 °C
MA4VAT907-1061
Typical Attenuation
-30
-25
-20
-15
-10
-5
0
0.600 0.700 0.800 0.900 1.000 1.100 1.200
Frequency (GHz)
Attenuation (dB)
0V/0mA 1V/0.55mA 1.28V/0.90mA 1.87V/1.72mA 2.33V/2.37mA 2.75V/2.95mA 3.0V/3.35mA
Typical Return Loss @ All Attenuation Levels Plot
MA4VAT907-1061
Attenuation vs Control Voltage
-30
-25
-20
-15
-10
-5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Bias Voltage (V)
Attenuation (dB)
800MHz 900MHz 1000MHz
Typical IIP3 vs Attenuation Plot
Typical Attenuation vs Voltage
Typical Insertion Loss & Attenuation Plot
MA4VAT907-1061
Typical Input Return Loss
-30
-25
-20
-15
-10
-5
0
0.600 0.700 0.800 0.900 1.000 1.100 1.200
Frequency (GHz)
Attenuation (dB)
MA4VAT907-1061
Typical IP3 vs Bias Voltage @900MHz
(1MHz Offset, +10dBm Pin)
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Bias Voltage (V)
IP3 (dBm)
Typical Relative Phase Shift Per Attenuation (Voltage)
MA4VAT907-1061
Relaive Phase vs Control Voltage
-90
-70
-50
-30
-10
10
30
50
70
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Bias Voltage (V)
Relative Phase (Degree)
800MHz 900MHz 1000MHz
For Reference ONLY:
Insertion Loss = 0.00 V @ 0.00 mA
5dB Attenuation = 1.30 V @ 0.95 mA
10dB Attenuation = 1.94 V @ 1.78 mA
15dB Attenuation = 2.36 V @ 2.42 mA
20dB Anttenuation = 2.67 V @ 2.90 mA
Max Attenuation = 2.77 V @ 3.00 mA
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT907-1061T
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Package PIN Designation, External Components, and Equivalent Circuit
External Bias Components
Rbias= 680 Ohms ( 3.0 V @ 3.5 mA )
Lbias= 150 nH
Cbias =100 pF
Cblock =100 pF
Lbias
Cbias RF OUT/IN
Cblock
Lbias
Control Current
Rbias
Cbias RF IN/OUT
Cblock
