VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 * * * * * Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 25 A 50 A 20 V 10 s 150 C 5SMX 12E1274 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 25 C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Gate charge Qge Input capacitance Cies 2.0 75 4.5 6.5 V IC = 25 A, VCE = 600 V, VGE = -15 ..15 V 195 Internal gate resistance RGint 10 Turn-on delay time td(on) Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 2.01 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 0.08 Fall time A nA Cres td(off) A 200 Reverse transfer capacitance Turn-off delay time V -200 Coes tr Unit V 100 Output capacitance Rise time 2.3 2.2 Tvj = 125 C IC = 1 mA, VCE = VGE, Tvj = 25 C max V Tvj = 25 C ICES VGE(TO) 1.7 Tvj = 125 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ 0.14 VCC = 600 V, IC = 25 A, RG = 33 , VGE = 15 V, L = 120 nH, inductive load Tvj = 25 C 95 Tvj = 125 C 100 Tvj = 25 C 70 Tvj = 125 C 70 VCC = 600 V, IC = 25 A, RG = 47 , VGE = 15 V, L = 120 nH, inductive load Tvj = 25 C 295 Tvj = 125 C 355 Tvj = 25 C 65 Tvj = 125 C 95 Tvj = 25 C 2.1 VCC = 600 V, IC = 25 A, VGE = 15 V, RG = 33 , L = 120 nH, inductive load, FWD: 1/2 5SLX12E1200 VCC = 600 V, IC = 25 A, VGE = 15 V, RG = 47 , L = 120 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 3.2 Tvj = 25 C 1.4 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 2.3 140 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1301-00 Dec 07 page 2 of 5 5SMX 12E1274 Mechanical properties Parameter Unit Dimensions Overall die L x W 6.6 x 6.5 mm exposed L x W (except gate pad) front metal 5.1 x 5.0 mm 1.2 x 1.2 mm 130 20 m 4 m 1.8 m gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing Emitter G Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1301-00 Dec 07 page 3 of 5 5SMX 12E1274 50 50 VCE = 20V 25 C 40 40 125 C 30 IC [A] IC [A] 30 20 20 125 C 10 10 25 C VGE = 15V 0 0 0 1 2 3 4 0 1 2 3 4 Typical on-state characteristics Fig. 2 22 7 8 9 10 11 12 Typical transfer characteristics 14 VCC = 600 V RGon = 33 ohm RGoff = 47 ohm VGE = 15 V Tvj = 125 C L = 120 nH 20 18 16 VCC = 600 V IC = 25 A VGE = 15 V Tvj = 125 C L = 120 nH 13 12 11 10 9 Eon, E off [mJ] 14 Eon, E off [mJ] 6 VGE [V] VCE [V] Fig. 1 5 12 10 Eon 8 Eon 8 7 6 5 4 6 3 Eoff 4 2 Eoff 2 1 0 0 0 10 20 30 40 50 60 70 0 80 Typical switching characteristics vs collector current 100 150 200 250 300 RG [ohm] IC [A] Fig. 3 50 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1301-00 Dec 07 page 4 of 5 5SMX 12E1274 20 10 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 600 V 15 1 C [nF] VGE [V] VCC = 800 V 10 Coes 0.1 Cres 5 IC = 25 A Tvj = 25 C 0 0.01 0.00 Fig. 5 0.05 0.10 Qg [C] 0.15 Typical gate charge characteristics 0.20 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1301-00 Dec 07