5SMX 12E1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1301-00 Dec 07 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.7 2.0 2.3 V
Collector-emitter
saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 125 °C 2.2 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 75 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200
200 nA
Gate-emitter threshold voltage VGE(TO) IC = 1 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 25 A, VCE = 600 V, VGE = -15 ..15 V 195 nC
Input capacitance Cies 2.01
Output capacitance Coes 0.14
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.08 nF
Internal gate resistance RGint 10 Ω
Tvj = 25 °C 95
Turn-on delay time td(on) Tvj = 125 °C 100 ns
Tvj = 25 °C 70
Rise time tr
VCC = 600 V, IC = 25 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 120 nH,
inductive load Tvj = 125 °C 70 ns
Tvj = 25 °C 295
Turn-off delay time td(off) Tvj = 125 °C 355 ns
Tvj = 25 °C 65
Fall time tf
VCC = 600 V, IC = 25 A,
RG = 47 Ω, VGE = ±15 V,
Lσ = 120 nH,
inductive load Tvj = 125 °C 95 ns
Tvj = 25 °C 2.1
Turn-on switching energy Eon
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 120 nH,
inductive load,
FWD: ½ 5SLX12E1200 Tvj = 125 °C 3.2
mJ
Tvj = 25 °C 1.4
Turn-off switching energy Eoff
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 47 Ω,
Lσ = 120 nH,
inductive load Tvj = 125 °C 2.3 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM ≤ 1200 V 140 A
2) Characteristic values according to IEC 60747 - 9