ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200
V
IC = 25
A
Die size: 6.6 x 6.5 mm
Doc. No. 5SYA 1301-00 Dec 07
Low loss, rugged SPT technology
Smooth switching for good EMC
Minimized gate charge, short delay times
Optimized for paralleling
Large bondable emitter area
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj 25 °C 1200
V
DC collector current IC 25 A
Peak collector current ICM Limited by Tvjmax 50 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 900 V, VCEM 1200 V
VGE 15 V, Tvj 125 °C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMX 12E1274
5SMX 12E1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1301-00 Dec 07 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.7 2.0 2.3 V
Collector-emitter
saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 125 °C 2.2 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 75 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200
200 nA
Gate-emitter threshold voltage VGE(TO) IC = 1 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 25 A, VCE = 600 V, VGE = -15 ..15 V 195 nC
Input capacitance Cies 2.01
Output capacitance Coes 0.14
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.08 nF
Internal gate resistance RGint 10
Tvj = 25 °C 95
Turn-on delay time td(on) Tvj = 125 °C 100 ns
Tvj = 25 °C 70
Rise time tr
VCC = 600 V, IC = 25 A,
RG = 33 , VGE = ±15 V,
Lσ = 120 nH,
inductive load Tvj = 125 °C 70 ns
Tvj = 25 °C 295
Turn-off delay time td(off) Tvj = 125 °C 355 ns
Tvj = 25 °C 65
Fall time tf
VCC = 600 V, IC = 25 A,
RG = 47 , VGE = ±15 V,
Lσ = 120 nH,
inductive load Tvj = 125 °C 95 ns
Tvj = 25 °C 2.1
Turn-on switching energy Eon
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 33 ,
Lσ = 120 nH,
inductive load,
FWD: ½ 5SLX12E1200 Tvj = 125 °C 3.2
mJ
Tvj = 25 °C 1.4
Turn-off switching energy Eoff
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 47 ,
Lσ = 120 nH,
inductive load Tvj = 125 °C 2.3 mJ
Short circuit current ISC tpsc 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM 1200 V 140 A
2) Characteristic values according to IEC 60747 - 9
5SMX 12E1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1301-00 Dec 07 page 3 of 5
Mechanical properties
Parameter Unit
Overall die
L x W 6.6 x 6.5 mm
exposed
front metal
L x W (except gate pad) 5.1 x 5.0 mm
gate pad L x W 1.2 x 1.2 mm
Dimensions
thickness 130 ± 20 µm
front (E) AlSi1 4 µm
Metallization 3) back (C) Al / Ti / Ni / Ag 1.8 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
Emitter G
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
5SMX 12E1274
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1301-00 Dec 07 page 4 of 5
0
10
20
30
40
50
01234
VCE [V]
IC [A]
V
GE = 15V
25 °C
125 °C
0
10
20
30
40
50
0 1 2 3 4 5 6 7 8 9 10 11 12
VGE [V]
IC [A]
VCE = 20V
25 °C
125 °C
Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics
0
2
4
6
8
10
12
14
16
18
20
22
010 20 30 40 50 60 70 80
IC [A]
Eon, Eoff [mJ]
VCC = 600 V
RGon = 33 ohm
RGoff = 47 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 120 nH
Eon
Eoff
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0 50 100 150 200 250 300
RG [ohm]
Eon, Eoff [mJ]
Eon
Eoff
VCC = 600 V
IC = 25 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 120 nH
Fig. 3 Typical switching characteristics vs
collector current Fig. 4 Typical switching characteristics vs
gate resistor
5SMX 12E1274
ABB Switzerland Ltd, Semiconductors reserves the right to chan
ge specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1301-00 Dec 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.00 0.05 0.10 0.15 0.20
Qg [µC]
VGE [V]
V
CC
= 600 V
VCC = 800 V
IC = 25 A
Tvj = 25 °C
0.01
0.1
1
10
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage