1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 50 mA, a tp of 300 s and a of 10 %:
Output power = 20 W
Power gain = 15.5 dB
Efficiency = 45 %
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 5 — 1 September 2015 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase =25
C; tp = 300
s;
= 10 %; IDq = 50 mA; in a class-AB
production test circuit.
Mode of operation f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
Pulsed RF 3.1 to 3.5 32 20 15.5 45 20 10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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Product data sheet Rev. 5 — 1 September 2015 2 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS6G3135-20 (SOT608A)
1drain
2gate
3source [1]
BLS6G3135S-20 (SOT608B)
1drain
2gate
3source [1]
1
23
sym112
1
3
2
1
2
3
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLS6G3135-20 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLS6G3135S-20 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage 0.5 +13 V
IDdrain current - 2.1 A
Tstg storage temperature 65 +150 C
Tjjunction temperature - 225 C
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 3 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
5. Thermal characteristics
6. Characteristics
7. Application information
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Max Unit
Rth(j-case) thermal resistance from junction
to case
Tcase =80C; PL=20W
tp= 100 s; = 20 % 0.76 0.92 K/W
tp= 300 s; = 10 % 0.79 0.95 K/W
Table 6. Characteristics
Tj=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; I
D=0.5mA 60 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D=40mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 1.5 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
68.2- A
IGSS gate leakage current VGS =8.3V; V
DS = 0 V - - 150 nA
gfs forward transconductance VDS =10V; I
D=1.4A - 2.8 - S
RDS(on) drain-source on-state
resistance
VGS =V
GS(th) +3.75 V;
ID=1.4A
- 0.37 0.58
Table 7. Application information
Mode of operation: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =32V; I
Dq =50mA;
Tcase =25
C; unless otherwise specified; in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 20 - W
VCC supply voltage PL=20W - - 32 V
Gppower gain PL= 20 W 12 15.5 - dB
Ddrain efficiency PL= 20 W 40 45 - %
trrise time PL=20W - 20 50 ns
tffall time PL=20W - 10 50 ns
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Product data sheet Rev. 5 — 1 September 2015 4 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.1 Impedance information
[1] Measured with ZL optimized for Gp.
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 32 V; IDq = 50 mA; PL= 20 W; tp = 300 s; = 10 %.
Table 8. Typical impedance
f ZSZL (optimized for D) ZL (optimized for Gp) Gp(opt) D [1]
GHz dB %
3.1 31.24 j31.07 6.99 + j12.9 13.01 + j14.75 18.08 48.34
3.2 50.56 j12.48 5.82 + j8.77 11.47 + j11.17 17.97 45.60
3.3 43.66 + j17.27 2.32 + j6.17 10.05 + j10.55 17.75 47.01
3.4 24.13 + j28.47 5.52 + j6.10 9.93 + j8.48 17.91 47.03
3.5 10.56 + j22.21 5.79 + j3.19 9.37 + j5.73 17.68 46.54
Fig 1. Definition of transistor impedance
001aaf059
drain
Z
L
Z
S
gate
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 5 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.3 Graphs
VDS = 32 V; IDq = 50 mA; tp= 300 s; =10%;
PL=20W.
VDS = 32 V; IDq = 50 mA; tp= 300 s; =10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2. Power gain and drain efficiency as functions
of frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
VDS = 32 V; IDq = 50 mA; tp= 300 s; =10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp= 300 s; =10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 4. Efficiency as a function of load power; typical
values
Fig 5. Load power as a function of input power;
typical values
001aaf983
f (GHz)
3 3.63.43.2
11
13
9
15
17
Gp
(dB)
7
ηD
Gp
20
30
10
40
50
0
ηD
(%)
001aaf984
PL (W)
0302010
11
13
9
15
17
Gp
(dB)
7
(2)
(3)
(1)
001aaf985
PL (W)
0302010
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
Pi (W)
0 1.20.80.4
001aaf986
10
20
30
PL
(W)
0
(2) (3) (1)
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 6 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
VDS = 32 V; IDq = 100 mA; tp=50s; =20%;
PL=20W.
VDS = 32 V; IDq = 50 mA; tp= 100 s; =20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 6. Power gain and drain efficiency as functions
of frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
VDS = 32 V; IDq = 50 mA; tp= 100 s; =20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp= 100 s; =20%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 8. Efficiency as a function of load power; typical
values
Fig 9. Load power as a function of input power;
typical values
001aaf987
f (GHz)
3 3.63.43.2
11
13
9
15
17
Gp
(dB)
7
ηD
Gp
20
30
10
40
50
0
ηD
(%)
001aaf988
PL (W)
0302010
10
12
8
14
16
Gp
(dB)
6
(2)
(3)
(1)
001aaf989
PL (W)
0302010
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
Pi (W)
0 1.20.80.4
001aaf990
10
20
30
PL
(W)
0
(2) (3) (1)
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 7 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
8. Test information
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with r= 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
VDD
VGG
R1
C13 C3 C4
C5
C6
C1 C2
C7 L1
C12
C10 C11
C8
C9
λ / 4-line
λ / 4-line
001aah590
Table 9. List of components
See Figure 10.
Component Description Value Remarks
C1, C2, C5, C6, C7, C8, C9 multilayer ceramic chip capacitor 33 pF[1]
C3, C4, C10, C11 multilayer ceramic chip capacitor 470 pF [2]
C12 electrolytic capacitor 47 F; 63 V
C13 electrolytic capacitor 10 F; 35 V
L1 copper wire -
R1 resistor 49.9
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 8 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
9. Package outline
Fig 11. Package outline SOT608A
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT608A
sot608a_po
09-08-26
13-01-29
Unit
mm
max
nom
min
4.62
3.76
7.24
6.99
10.21
10.01
10.29
10.03
10.21
10.01
10.29
10.03
0.25
A
Dimensions (millimetre dimensions are derived from the original inch dimensions)
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
bc
0.15
0.10
DD
1EE
1FHpQqU
1U2
9.91
9.65
w1
0.25
w2
0.25
w3
15.37
15.11
3.30
2.92
15.24
1.14
0.89
1.70
1.45
20.45
20.19
0 5 10 mm
scale
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
w3AB
A
q
U1
C
B
E1
w2ABC
w1ABC
w2ABC
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 9 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
Fig 12. Package outline SOT608B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT608B
sot608b_po
09-08-26
13-01-29
Unit
mm
max
nom
min
4.62
3.76
7.24
6.99
10.21
10.01
10.29
10.03
10.21
10.01
10.29
10.03
A
Dimensions (millimetre dimensions are derived from the original inch dimensions)
Ceramic earless flanged package; 2 leads SOT608B
bc
0.15
0.10
DD
1EE
1FHQU
1U2
10.24
9.98
w1
0.25
w2
0.25
15.37
15.11
1.14
0.89
1.70
1.45
10.24
9.98
0 5 mm
scale
1
2
b
H
3
D
A
F
D1
U1
E
E1
U2
c
Q
A
C
B
w2ABC
w2ABC
w1ABC
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 10 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal Oxide Semiconductor
RF Radio Frequency
S-Band Short wave Band
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS6G3135-20_6G3135S-20#5 20150901 Product data sheet BLS6G3135-20_6G3135S-20_4
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•Legal texts have been adapted to the new company name where appropriate.
BLS6G3135-20_6G3135S-20_4 20130311 Product data sheet - BLS6G3135-20_6G3135S-20_3
BLS6G3135-20_6G3135S-20_3 20090303 Product data sheet - BLS6G3135-20_6G3135S-20_2
BLS6G3135-20_6G3135S-20_2 20081217 Product data sheet - BLS6G3135-20_6G3135S-20_1
BLS6G3135-20_6G3135S-20_1 20070307 Objective data sheet - -
BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 11 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 5 — 1 September 2015 12 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
© Ampleon The Netherlands B.V. 2015. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLS6G3135-20_6G3135S-20#5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.2 Ruggedness in class-AB operation . . . . . . . . . 4
7.3 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
