RB717F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for Dimensions (Units : mm) high density surface mounting on printed circuit boards. Each envelope contains 2.0402 two diodes with a common anode. 13+01 0.9+0.1 Features 0,65 0.65 0.3 0.6 available in UMD3 (UMD, SC-70, SOT-323) package * part marking, 3E A Applications 4 c g . oo 0.30.1 sce] * general detection circuits ye (each lead has the same dimensions: (i)! @) rE th | | 1,25+0.1 aos 2.1+01 oO ie io * high speed switching oe. 0.9 Min. |- b+} 1 2 wb! ep Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Peak reverse voltage Vam 25 Vv DC reverse voltage Vr 20 Vv Mean rectifying current lo 30 mA Freak forward surge lESM 200 mA |At 60 Hz for | cycle Junction temperature Tj 125 C Storage temperature Tstg 40 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min |Typical) Max Unit Conditions Forward voltage Ve 0.28 0.37 Vo s|ip = 1.0 mA Reverse current In 0.05 I HA jVR=l10V Capacitance between _ _ terminals CG 2.0 pF |Ve=1V,f=1 MHz Diodes RONM 183RB717F Schottky barrier diodes Electrical characteristic curves Typ. pulse measurement tile In! - 5 a lu vt) Ww xe ae c c 2 a] oO oO a 1 100 rc n a xc = Lu x > Oo uJ w a 10n tn 0: 6 08 10 2 14 FORWARD VOLTAGE (Vi fv: REVERSE VOLTAGE | Va ov! Figure 1 Figure 2 r T T _ $4 10 4 tH 3} oe ae ] @ 4 { 3 w 2 10[.- b ~ L = z "} | 2 Ff 4 -t & Zz P ~ 1 Ww Bo oR . 3 , 3 2 iL mg, iW tr 4 r 4 , f - B y L a fea z | 4+ 4 Lu a > 0.2 Fob Ye # Oo a 0.1 [ 0.1 < 0) 5 10 15 20 25 Le) REVERSE VOLTAGE : Va iV! FORWARD CURRENT : Ir {mA} Figure 3 Figure 4 184 RowM Diodes