330A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST173C..C SERIES
1
Bulletin I25180 rev. B 04/00
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Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
IT(AV) 330 A
@ Ths 55 °C
IT(RMS) 610 A
@ Ths 25 °C
ITSM @ 50Hz 4680 A
@ 60Hz 4900 A
I2t@
50Hz 110 KA2s
@ 60Hz 100 KA2s
VDRM/VRRM 1000 to1200 V
tq range 15 to 30 µs
TJ- 40 to 125 °C
Major Ratings and Characteristics
Parameters ST173C..C Units
ST173C..C Series
2
Bulletin I25180 rev. B 04/00
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Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
10 1000 1100
12 1200 1300
IT(AV) Max. average on-state current 330 (120) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 610 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 4680 t = 10ms No voltage
non-repetitive surge current 4900 A t = 8.3ms reapplied
3940 t = 10ms 100% VRRM
4120 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 110 t = 10ms No voltage Initial TJ = TJ max
100 t = 8.3ms reapplied
77 t = 10ms 100% VRRM
71 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1100 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST173C..C Units Conditions
On-state Conduction
KA2s
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST173C..C 40
Frequency Units
50Hz 760 660 1200 1030 5570 4920
400Hz 730 590 1260 1080 2800 2460
1000Hz 600 490 1200 1030 1620 1390 A
2500Hz 350 270 850 720 800 680
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
ST173C..C Series
3
Bulletin I25180 rev. B 04/00
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VTM Max. peak on-state voltage 2.07 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST173C..C Units Conditions
On-state Conduction
1.55 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.61 (I > π x IT(AV)), TJ = TJ max.
V
0.87 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.77 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST173C..C Units Conditions
1000 A/µs
tdTypical delay time 1.1
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST173C..C Units Conditions
Blocking
500 V/µs
40 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST173C..C Units Conditions
20
5
VT
J = TJ max, tp ≤ 5ms
200 mA
3V
TJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
tqMax. turn-off time 15 30
µs
WT
J = TJ max, f = 50Hz, d% = 50
ST173C..C Series
4
Bulletin I25180 rev. B 04/00
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TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST173C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180°0.015 0.016 0.011 0.011
120°0.018 0.019 0.019 0.019
90°0.024 0.024 0.026 0.026 K/W TJ = TJ max.
60°0.035 0.035 0.036 0.037
30°0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Ordering Information Table
5689
ST 17 3 C 12 C H K 1
3410
7
Device Code
12
1- Thyristor
2- Essential part number
3- 3 = Fast turn off
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- C = Puk Case TO-200AB (A-PUK)
7- Reapplied dv/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
10
tq(µs)
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
15 CL -- -- -- --
18 CP DP EP FP * --
20 CK DK EK FK * HK
25 CJ DJ EJ FJ HJ
30 -- DH EH FH HH
*Standard part number.
All other types available only on request.
ST173C..C Series
5
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST173C..C Series
(Single Side Cooled)
R (D C) = 0.17 K/W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 50 1 00 150 2 00 25 0 300 350
DC
30°60 °
90°
120°
180°
Average On -state C urren t (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST 173C ..C Series
(Single Side C oo led)
R (D C ) = 0.17 K/W
thJ-hs
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST173C..C Series
6
Bulletin I25180 rev. B 04/00
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Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
DC
30°
60°
90°
120°
180°
Average O n-state C urrent (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST17 3C..C Series
(Double Side C o ole d)
R (D C ) = 0.08 K/W
th J- hs
30
40
50
60
70
80
90
100
110
120
130
0 50 1 00 150 2 00 2 50 300 35 0 400
30°
60°90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST 173C ..C Se ries
(Double Side C ooled)
R (D C ) = 0.08 K/W
thJ-h s
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
RMS Lim it
Cond uction Period
Maximum Average On-state Power Loss (W)
A ve ra g e O n -sta te Curre nt (A )
ST17 3C ..C Series
T = 125°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
RMS Lim it
Cond uction Angle
Maximum Average On-state Power Loss (W)
A vera g e On -sta te Curre nt (A )
ST173C ..C Series
T = 125°C
J
2000
2500
3000
3500
4000
4500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave O n-state Current (A)
In it ia l T = 1 2 5 °C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
J
ST17 3C ..C Series
1500
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
P u lse T r a in D u ra ti o n ( s )
Ve rsus Pulse Tra in D ura tion . Co ntro l
Of C on duction M ay Not Be M aintain ed.
Peak Half Sine Wave O n-state Current (A)
In it ia l T = 1 2 5 °C
No Voltage Reapplied
Rate d V Reap plied
RRM
J
ST173C..C Series
M a x im um N on Re petitive S urg e Cu rre nt
ST173C..C Series
7
Bulletin I25180 rev. B 04/00
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Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
11.522.533.544.5
T = 25°C
Instantaneous On-state Curren t (A)
Instantaneous On -state Voltage (V)
T = 125°C
J
ST173C ..C Series
J
0
50
100
150
200
250
0 20406080100
I = 5 00 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Ch arge - Qrr (µC)
ST173C..C Series
T = 125 °C
J
TM
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square W ave Pulse D uratio n (s)
thJ-hs
Transien t Therm al Im pe da nc e Z (K/W )
ST173 C..C Se ries
Steady State Value
R = 0.17 K/W
(Sin gle Side C ooled)
R = 0.08 K/W
(Double Side Cooled)
(D C Ope ration)
th J- hs
th J- hs
1E2
1E3
1E4
1E11E21E31E4
50 Hz
400
2500
100
Pulse Ba se w idth (µs)
Pe a k O n-state C urrent (A)
1000
1500
3000
200500
5000 ST173C..C Series
Sinus o id a l pul se
T = 40 °C
C
Snubber circuit
R = 47 oh m s
C = 0.22 µF
V = 80% V
s
s
DDR M
tp
1E4 1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B asew idth (µs)
1000
1500
3000
200
500
5000 ST1 73C ..C Serie s
Sinusoidal pulse
T = 55°C
C
Snubber circuit
R = 47 ohm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
tp
1E1
0
20
40
60
80
100
120
140
160
0 20406080100
M axim um Rev erse Re cov ery C urren t - Irr (A )
Ra te O f Fa ll O f F orw ar d C urren t - d i/d t (A /µs)
I = 5 00 A
300 A
200 A
100 A
50 A
ST173C..C Series
T = 125 °C
J
TM
ST173C..C Series
8
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E 4
50 Hz
400
2500
100
Pulse B a sew idth (µs)
Peak On-state Current (A)
1000
1500
3000
200
500
5000 ST17 3C ..C Se ries
Tr a p e zoid al p ulse
T = 40°C
di/dt = 100A/µs
C
Snubber circuit
R = 4 7 o hm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
tp
10000
1E4 1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B ase w idth (µs)
1000
1500
200
500
ST173C..C Series
Tra p ezo ida l pu ls e
T = 55°C
di/dt = 100A/µs
C
3000
Snub b e r c i rc uit
R = 47 o hm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
tp
5000
10000
1E1
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B asew idth (µs)
1000
1500
2000
200
500
ST17 3C..C Series
Tr a p ezo i d a l puls e
T = 5 5°C
di/dt = 50A/µs
C
Snubber circuit
R = 47 o hm s
C = 0 .22 µ F
V = 8 0% V
s
s
DDRM
tp
3000
5000
1E1
1E2
1E3
1E4
1E11E21E31E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse B asew idth (µs)
P ea k O n-state Current (A)
ST173 C..C Series
Tr a p ezo i d a l puls e
T = 40 °C
di/dt = 50A/µs
C
Snubber circuit
R = 47 o hm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
tp
5000
1E4
1E1 1E2 1E3 1E4
Pulse Ba sew idth (µs)
20 joules per pulse
1
0.5
0.3
0.2
0.1
ST173 C..C Serie s
Rectangular pulse
di/dt = 50A/µs
10
5
3
tp
2
1E1
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E 4
Pulse Basewidth (µs)
20 joules pe r p ulse
2
1
0.5
0.3
0.2
0.1
10
5
Pea k On-state C urrent (A)
3
ST17 3C ..C Serie s
Sinuso i da l p u ls e
tp
1E4
ST173C..C Series
9
Bulletin I25180 rev. B 04/00
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Fig. 17 - Gate Characteristics
0.1
1
10
100
0.0 01 0.0 1 0.1 1 1 0 1 00
VGD
IG D
(b)
(a )
Tj=25 °C
Tj=1 25 °C
Tj=-40 °C
(1) (2)
Instanta neous G ate Curren t (A)
Insta ntaneo us Ga te Vo ltage (V)
Re c tang ula r gate p ulse
a) Recomm ended load line for
b ) R e c o m m e n d e d lo a d li n e fo r
<=30% rated di/dt : 10V, 10ohm s
rate d d i/dt : 20V, 10 ohm s; tr<=1 µs
tr<=1 µs
(1) PG M = 10 W, tp = 20m s
(2) PG M = 20 W, tp = 10m s
(3) PG M = 40W , tp = 5m s
(4) PG M = 60 W, tp = 3.3ms
(3)
Device: ST173C ..C Series Frequency Limited by PG (AV )
(4)
