Single Angled Facet (SAF) Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics' Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets using Quantum Photonics' patented Passive Active Resonant Coupler (PARC) integration technology provide nearly circular beam characteristics enhancing chip coupling efficiency. This unique combination of ridge waveguide laser design, broadband low angled facet reflectivity, and integrated mode transformers make the SAF ideally suited for use as the gain component in high-power widelytunable external cavity lasers. FEATURES MQW optimized for C-band or L-band laser wavelengths High output power based on 100 mW Fabry-Perot laser diode design Low front facet reflectivity (R<10-4) Integrated mode transformer for circular output beam pattern Numerous packaging options including SAF heatsink, chip-on-submount (CoS), TO-can, and bare die APPLICATION Gain medium for widely tunable external cavity semiconductor lasers Gain medium for narrow linewidth fiber Bragg grating lasers High-power amplified spontaneous emission (ASE) superluminescent sources R2 R1 0ext ext Fig. 1: Top View of Single Angled Facet (SAF) Gain Chip -30 -30 20 Intensity (dB) Optical Power (mW) 30 10 0 0 100 200 Current (mA) Fig. 2: Typical ASE Output Power 300 400 -40 -50 -60 1450 1500 1550 1600 Wavelength (nm) Fig. 3: Optical Spectrum ( = 200 mA) 1650 E L E C T R I C A L / O P T I C A L C H A R A C T E R I S T I C S ( C W, T = 2 5 C ) Parameter Symbol Test Condition Typical Specification ASE peak wavelength peak = 200 mA 1550 nm ASE spectral bandwidth (-3 dB) op = 200 mA 50 nm Operating Current mA Operating Voltage Vop op 300 1.5 V Front (angled) facet reflectance R1 1520-1580 <0.01 % L-band, 1300 nm, optional Rear facet reflectance 1520-1580 >5 % Customer specified Lateral Beam Exit Angle R2 ext 26 degrees See Fig. 1, other angles optional Chip Length L 1.0 mm L = 0.6 mm optional Mode Trans A* Mode Trans B* 36 degrees 30 26 14 degrees 30 25 Beam Divergence Angle (FWHM) -transverse -parallel t p op op Unit Fabry-Perot Laser Diode Equiv. L-band, 1300 nm, optional L = 1 mm, HR = 90%, AR= 2% (no angled facet) Threshold Current th 50 mA Slope efficiency S P0 0.4 W/A 100 mW Output power Comments = 300 mA PACKAGING OPTIONS: SAF heatsink, chip-on-submount (CoS), TO-9*, TO-5.6*, bare die Fig. 4: SAF mounted flush on SAF heatsink * Available 2Q'02 Fig. 5: SAF mounted at 26 angle on SAF heatsink 10335 Guilford Road Jessup, Maryland 20794 240-456-7100 www.quantumphotonics.com