DESCRIPTION
Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser
cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with anti-
reflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
using Quantum Photonics’ patented Passive Active Resonant Coupler (PARC) integration technology provide nearly circular beam
characteristics enhancing chip coupling efficiency. This unique combination of ridge waveguide laser design, broadband low angled
facet reflectivity, and integrated mode transformers make the SAF ideally suited for use as the gain component in high-power widely-
tunable external cavity lasers.
FEATURES
▲MQW optimized for C-band or L-band laser wavelengths
▲High output power based on 100 mW Fabry-Perot laser diode design
▲Low front facet reflectivity (R<10-4)
▲Integrated mode transformer for circular output beam pattern
▲Numerous packaging options including SAF heatsink, chip-on-submount (CoS), TO-can, and bare die
APPLICATION
▲Gain medium for widely tunable external cavity
semiconductor lasers
▲Gain medium for narrow linewidth fiber Bragg
grating lasers
▲High-power amplified spontaneous emission (ASE)
superluminescent sources
Current (mA)
O
p
ti
ca
l
P
ower
(
m
W)
0
0
10
20
30
100 200 300 400
Wavelength (nm)
1450 1500 1550 1600 1650
Intensity (dB)
-60
-50
-40
-30
-30
Single Angled Facet (SAF) Laser Diode
1550 nm semiconductor gain chip
(Preliminary)
Fig. 2: Typical ASE Output Power
R2 R1
0ext
θext
Fig. 1: Top View of Single Angled Facet (SAF) Gain Chip
Fig. 3: Optical Spectrum (Ι= 200 mA)
10335 Guilford Road ▲Jessup, Maryland 20794
240-456-7100 ▲www.quantumphotonics.com
ASE peak wavelength λpeak Ι= 200 mA 1550 nm L-band, 1300 nm, optional
ASE spectral bandwidth (-3 dB) ∆λ Ι = 200 mA 50 nm
Operating Current Ιop 300 mA
Operating Voltage Vop Ιop 1.5 V
Front (angled) facet reflectance R1 1520-1580 <0.01 % L-band, 1300 nm, optional
Rear facet reflectance R2 1520-1580 >5 % Customer specified
Lateral Beam Exit Angle θext 26 degrees See Fig. 1, other angles optional
Chip Length L 1.0 mm L = 0.6 mm optional
Beam Divergence Angle (FWHM) Mode Trans A* Mode Trans B*
-transverse θtΙop 36 degrees 30 26
-parallel θpΙop 14 degrees 30 25
Fabry-Perot Laser Diode Equiv. L = 1 mm, HR = 90%,
AR= 2% (no angled facet)
Threshold Current Ιth 50 mA
Slope efficiency S 0.4 W/A
Output power P0Ι= 300 mA 100 mW
PACKAGING OPTIONS: SAF heatsink, chip-on-submount (CoS), TO-9*, TO-5.6*, bare die * Available 2Q’02
Parameter Symbol Test Condition Typical Specification Unit Comments
ELECTRICAL/OPTICAL CHARACTERISTICS (CW, T = 25˚ C)
Fig. 4: SAF mounted flush on SAF heatsink Fig. 5: SAF mounted at 26˚ angle on SAF heatsink
