TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold (1.6V max.) High input impedance Low input capacitance (110pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Device Package Option TN0620 BVDSS/BVDGS RDS(ON) ID(ON) VGS(th) (min) (A) (max) (V) 1.0 1.6 TO-92 (V) (max) () TN0620N3-G 200 6.0 -G indicates package is RoHS compliant (`Green') Pin Configurations Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage -55 C to +150OC O 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) 20V Operating and storage temperature Soldering temperature* SOURCE GATE Product Marking TN 0 6 2 0 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN0620 Thermal Characteristics ID ID Power Dissipation jc Package (continuous) (mA) (pulsed) (A) @TC = 25OC (W) ( C/W) TO-92 250 2.0 1.0 125 O ( C/W) IDR (mA) IDRM 170 250 2.0 O ja (A) Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 200 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 1.6 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -5.0 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current 0.5 - - 1.0 - - - 6.0 8.0 - 4.0 6.0 - - 1.4 300 400 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/ C VGS = VDS, ID= 1.0mA O A %/OC VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 250mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA GFS Forward transductance CISS Input capacitance - 110 150 COSS Common source output capacitance - 40 85 CRSS Reverse transfer capacitance - 10 35 td(ON) Turn-on delay time - - 10 Rise time - - 8.0 Turn-off delay time - - 20 Fall time - - 20 Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 1.0A Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A tr td(OFF) tf VSD trr mmho VDS = 25V, ID = 500mA pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 1.0A, RGEN = 25 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tF D.U.T. 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TN0620 Typical Performance Curves Output Characteristics Saturation Characteristics 4.0 4.0 3.2 VGS = 10V 2.4 8V ID (amperes) ID (amperes) 3.2 6V 1.6 4V 0.8 2V 0 10 20 30 6V 1.6 4V 0 50 40 3V 2V 0 2 4 VDS (volts) 6 8 10 VDS (volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 1.0 10V 8V 0.8 3V 0 VGS = 2.4 2.0 VDS = 25V TA = -55OC 0.6 PD (watts) GFS (siemens) 0.8 TA = 25 C O 0.4 TA = 150OC TO-92 1.0 0.2 0 0 0 0.5 1.0 1.5 2.0 0 2.5 25 50 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 1.0 Thermal Resistance (normalized) ID (amperes) 75 TC (OC) 1.0 TO-92 (DC) 0.1 TC = 25 C 0.8 0.6 0.4 0.2 TO-92 PD = 1W TC = 25OC O 0.01 1 10 100 0 0.001 1000 VDS (volts) 0.01 0.1 1 10 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN0620 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 15 1.1 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 12 1.0 VGS = 10V 9 6 3 0.9 -50 0 50 100 0 150 0 0.8 1.6 2.4 3.2 Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 4.0 2.4 TA = 25OC 1.6 0.8 2 4 6 1.2 1.2 RDS @ 10V, 0.5A 1.0 0.8 0.8 0.4 TA = 150OC 0 0.6 8 -50 10 0 50 VGS (volts) 100 0 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz VDS = 10V 8 VGS (volts) 150 C (picofarads) 1.6 V (th)@ 1mA CISS 100 VDS = 40V 6 178 pF 4 COSS 50 2 100 pF CRSS 0 0 10 20 30 0 40 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) VDS (volts) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) TA = -55OC VGS(th) (normalized) ID (amperes) 1.4 VDS = 25V 3.2 0 4.0 ID (amperes) Tj (O C) TN0620 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b MIN .170 .014 NOM - - MAX .210 .022 c .014 D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* .022 JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN0620 A111708 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com