Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. The new generation provides lower On-voltage without sacrificing switching performance. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. IGBT IN TO-247 12 A @ 90C 20 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE * Industry Standard High Power TO-247 Package with Isolated Mounting Hole * High Speed: Eoff = 167 mJ/A typical at 125C * High Voltage Short Circuit Capability - 10 ms minimum at 125C, 720 V * Low On-Voltage -- 2.6 V typical at 10 A, 125C * Robust High Voltage Termination C G G C E E CASE 340K-01 STYLE 4 TO-247AE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCES 1200 Vdc Collector-Gate Voltage (RGE = 1.0 M) VCGR 1200 Vdc Gate-Emitter Voltage -- Continuous VGE 20 Vdc Collector Current -- Continuous @ TC = 25C Collector Current -- Continuous @ TC = 90C Collector Current -- Repetitive Pulsed Current (1) IC25 IC90 ICM 20 12 24 Adc PD 123 0.98 Watts W/C TJ, Tstg - 55 to 150 C tsc 10 ms RJC RJA 1.0 45 C/W TL 260 C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. IGBT Motorola Motorola, Inc. 1998 Device Data 1 MGW12N120E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1200 -- -- 870 -- -- mV/C 25 -- -- Vdc -- -- -- -- 10 300 -- -- 250 -- -- -- 2.0 2.1 2.6 3.0 -- 3.5 4.0 -- 6.0 10 8.0 -- mV/C gfe -- 5.6 -- Mhos pF OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) V(BR)CES Emitter-to-Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) ICES Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) IGES Vdc Adc nAdc ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 5.0 Adc) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 10 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies -- 1033 -- Coes -- 131 -- Cres -- 64 -- td(on) -- 39 -- tr -- 36 -- td(off) -- 129 -- tf -- 400 -- Eoff -- 0.96 1.5 mJ td(on) -- 155 -- ns SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VCC = 720 Vdc, Vd IC = 10 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 ) Energy losses include "tail" Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VCC = 720 Vdc, Vd IC = 10 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, H, RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" Turn-Off Switching Loss Gate Charge (VCC = 600 V, V IC = 10 Adc, Adc VGE = 15 Vdc) ns tr -- 36 -- td(off) -- 164 -- tf -- 625 -- Eoff -- 1.67 -- mJ QT -- 62 -- nC Q1 -- 15.6 -- Q2 -- 37 -- -- 13 -- INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2 Motorola IGBT Device Data MGW12N120E TYPICAL ELECTRICAL CHARACTERISTICS 40 40 VGE = 20 V TJ = 125C 17.5 V 15 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 25C 30 20 12.5 V 10 10 V 0 0 1 3 2 5 4 7 6 15 V 30 20 12.5 V 10 0 8 10 V 0 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 30 20 10 25C 0 9 11 13 15 6 7 IC = 10 A 7.5 A 2.5 5A 2.0 VCC = 720 V VGE = 15 V RG = 20 W 1.5 - 50 - 25 25 0 50 75 100 125 Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature Cies 1500 1000 Coes Cres 0 5 10 15 20 25 150 16 QT Q1 12 Q2 8 TJ = 25C IC = 10 A 4 0 0 10 20 30 40 50 60 70 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-to-Emitter Voltage versus Total Charge Motorola IGBT Device Data 8 3.0 Figure 3. Transfer Characteristics VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pF) 5 TJ, JUNCTION TEMPERATURE (C) 2000 0 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 2500 500 VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 250 s PULSE WIDTH 7 3 Figure 2. Output Characteristics 40 5 2 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics TJ = 125C 17.5 V VGE = 20 V 80 3 MGW12N120E TYPICAL ELECTRICAL CHARACTERISTICS IC , COLLECTOR CURRENT (AMPS) 100 TJ = 125C VGE = 15 V RG = 20 W 10 1 1 10 100 1k 10 k VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 7. Forward Characteristics versus Current 4 Motorola IGBT Device Data MGW12N120E PACKAGE DIMENSIONS 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -T- -Q- T B M E -B- C 4 L U A R 1 K 2 3 -Y- P V F D 0.25 (0.010) M Y Q G H DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 J STYLE 4: PIN 1. 2. 3. 4. S GATE COLLECTOR EMITTER COLLECTOR CASE 340K-01 TO-247AE ISSUE A Motorola IGBT Device Data 5 MGW12N120E Motorola reserves the right to make changes without further notice to any products herein. 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