© 2013 IXYS CORPORATION, All Rights Reserved DS100457A(10/13)
IXFA26N50P3
IXFP26N50P3
IXFQ26N50P3
IXFH26N50P3
Polar3TM HiperFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 26 A
IDM TC= 25C, Pulse Width Limited by TJM 78 A
IATC= 25C13 A
EAS TC= 25C 300 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 35 V/ns
PDTC= 25C 500 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
VDSS = 500V
ID25 = 26A
RDS(on)
240m
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 240 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D
D (Tab)
D (Tab)
TO-3P (IXFQ)
D
G
SD (Tab)
TO-220AB (IXFP)
S
D
G
TO-263 AA (IXFA)
G
S
D (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 14 23 S
Ciss 2220 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 280 pF
Crss 8 pF
RGi Gate Input Resistance 2.1 
td(on) 21 ns
tr 7 ns
td(off) 38 ns
tf 5 ns
Qg(on) 42 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 11 nC
Qgd 15 nC
RthJC 0.25 C/W
RthCS TO-220 0.50 C/W
TO-247 & TO-3P 0.25 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 26 A
ISM Repetitive, Pulse Width Limited by TJM 104 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
IRM 10.2 A
QRM 0.9 μC
IF = 13A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots;
but also may yet contain some information supplied during a pre-production design evaluation.
IXYS reserves the right to change limits, test conditions, and dimensions without notice.
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 5 10 15 20 25 30 35 40 45 50 55
R
DS(on)
-Normalized
I
D
-Amperes
Fig. 5. R
DS(on)
Normalized to I
D
= 13A Value vs.
Dr ain C ur ren t
V
GS
= 10V
T
J
= 125
°
C
T
J
= 25
°
C
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
I
D
-Amperes
T
C
- Degrees Centigrade
Fig. 6. Maximum Dr ain Cur rent vs.
Case T emper atur e
0
4
8
12
16
20
24
28
01234567
I
D
-Amperes
V
DS
-Volts
Fig. 1. Output Characteristics @ T
J
= 25
°
C
V
GS
= 10V
8V
7V
5V
6V
0
10
20
30
40
50
0 5 10 15 20 25 30
I
D
-Amperes
V
DS
-Volts
Fig. 2. Extended Output Characteristics @ T
J
= 25
°
C
V
GS
= 10V
8V
7V
5V
6V
0
4
8
12
16
20
24
28
0 2 4 6 8 10121416
I
D
-Amperes
V
DS
-Volts
Fig. 3. Output Characteristics @ T
J
= 125
°
C
4V
6V
5V
V
GS
= 10V
7V
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
T
J
- Degrees Centigrade
Fig. 4. R
DS(on)
Normalized to I
D
= 13A Value vs.
Junction Temperatur e
V
GS
= 10V
I
D
= 26A
I
D
= 13 A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
0
5
10
15
20
25
30
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
I
D
-Amperes
V
GS
-Volts
Fig. 7. Input A dmittance
T
J
= 125
°
C25
°
C
-40
°
C
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
g
f s
- Siemens
I
D
-Amperes
Fig. 8. Transconduct ance
T
J
= -4 0
°
C
125
°
C
25
°
C
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
I
S
-Amperes
V
SD
-Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
T
J
= 125
°
CT
J
= 25
°
C
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
V
GS
-Volts
Q
G
- NanoCoulombs
Fig. 10. Gat e Charge
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
Capacitance -PicoFarads
V
DS
-Volts
Fig. 11. C apacitance
f
= 1 MHz
Ciss
Crss
Coss
0.1
1
10
100
10 100 1,000
I
D
-Amperes
V
DS
-Volts
Fig. 12. F orward -Bi as Safe Op erati ng Ar ea
T
J
= 150
°
C
T
C
= 25
°
C
Single Puls e 1ms
100µs
R
DS(on)
Limit 25µs
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: F_26N50P3(W6) 3-26-12
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fi g . 13. Maxi mum Tran si en t Thermal Impeda n ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
TO-3P Outline
e
P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-220 Outline
Pins:
1 - Gate
2 - Drain
3 - Source
TO-263 Outline Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
1. Gate
2. Drain
3. Source
4. Drain
1. Gate
2. Drain
3. Source
4. Drain