Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FMS2023
DC-20GHz MMIC LOW LOSS SPST
ABSORPTIVE SWITCH
The FMS2023 is a low loss, high isolation broadband single-pole-single-throw Gal-
lium Arsenide switch, designed on the FL05 0.5μm switch process from RFMD. It
offers absorptive properties from the output (50Ω termination). This process tech-
nology offers leading-edge performance optimized for switch applications.
The FMS2023 is developed for the broadband communications, instrumentation,
and electronic warfare markets.
RF1 RF2
V1
V2
Low Insertion Loss: 1dB at
20GHz
High Isolation: 50dB at
20GHz
Absorptive Output in Off-State
Excellent Low Control Voltage
Performance
Available in Die Form
Applications
Broadband Communications
Test Instrumentation
Fiber Optics
Electronic Warfare (ECM,
ESM)
Rev A1 DS090612
9
Package Style: Bare Die
FMS2023
Parameter Specification Unit Condition
Min. Typ. Max.
Electrical Specifications
(Small-Signal Unless Noted)
TAMBIENT=25°C, VCTRL =0V/-5V. Specifications
based on on-wafer measurements.
Insertion Loss -0.6 -0.42 dB DC
-0.75 -0.55 dB 5GHz
-0.9 -0.7 dB 10GHz
-1.05 -0.8 dB 15GHz
-1.25 -1.0 dB 20GHz
Isolation -50 -43 dB DC-20GHz
Input Return Loss (On State) -21 -17 dB DC-20GHz
Output Return Loss (On State) -23 -17 dB DC-20GHz
Output Return Loss (Off State) -11 -9 dB DC-20GHz
P1dB 26 28 dBm 2GHz
25 27 dBm 10GHz
22 24 dBm 20GHz
2 of 6 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FMS2023
Note: -5V±0.2 V; -0V±0.2 V
Pad Layout
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Absolute Maximum Ratings1
Parameter Rating Unit
Maximum Input Power (PIN)+27dBm
Operating Temperature (TOPER) -40 to 85 °C
Storage Temperature (TSTOR) -55 to 150 °C
Truth Table
Control Line RF Path
V1 V2 RFIN-RFOUT
-5V 0V On (Low Loss)
0V -5V Off (Isolation)
Pad Description Pin Coordinates (μm)
RFIN RFIN 141, 587
RFO RFOUT 1789, 587
V1 V1 901, 161
V2 V2 1101, 161
Die Size (μm) Die Thickness (μm) Min. Bond Pad Pitch (μm) Min. Bond Pad Opening (μmxμm)
1910x 1110 100 150 116x116
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 6Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FMS2023
Typical Measured Performance for On-Wafer Measurements
Measurement Conditions: VCTRL=5V (low) and 0V (high), TAMBIENT=25°C unless otherwise stated.
Insert ion Loss (S2 1 ON)
-1.20
-1.00
-0.80
-0.60
-0.40
-0.20
0.00
0 2 4 6 8 101214161820
Fre quency (GHz)
S21 (dB)
Isol ation (S21 OF F )
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
02468101214161820
Frequency (GHz )
S21 (dB )
Input Re turn Los s (S11 ON)
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequency (GH z)
S11 (dB)
Output Return Loss (S22 ON )
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 10 12 14 16 18 20
Fre que ncy (GHz)
S11 (dB)
Absorptive O ut put Return Loss (S2 2 O FF)
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequency (GHz )
S11 (dB)
P1dB
0.00
4.00
8.00
12.00
16.00
20.00
24.00
28.00
2 4 6 8 10 12 14 16 18 20
Fre quency (GHz)
P1d B (d B m)
4 of 6 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FMS2023
Typical Performance for On-Wafer Measurements Over Temperature
Measurement Conditions: VCTRL=-5V (low) and 0V (high).
TAMBIENT =25°C, TCOLD=-40°C, THOT=+85°C
Insertion Loss ( S 2 1 O N)
-1.20
-1.00
-0.80
-0.60
-0.40
-0.20
0.00
02468101214161820
Frequency (GHz)
S21 (dB)
Is ola t ion ( S 2 1 OFF)
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
02468101214161820
Freque ncy (GHz)
S21 (d B)
I nput R eturn L oss (S11 ON)
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequenc y ( G Hz)
S11 (dB)
Out put Re turn Los s (S22 ON)
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
S22 (d B)
A b so rp tive Ou tp u t Retur n L oss (S22 OFF)
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequenc y ( G Hz )
S22 (dB)
P1dB
0.00
4.00
8.00
12.00
16.00
20.00
24.00
28.00
2 4 6 8 10 12 14 16 18 20
Frequenc y (GH z)
P1dB (dBm)
5 of 6Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FMS2023
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally
it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense
Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven
especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au
20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on
the leadframe material used and the particular application. The maximum time at used should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended.
Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires
should be minimized especially when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electro-
static Discharge (ESD) precautions should be observed at all stages of storage, handling,
assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No.
22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpack-
aged part and therefore no MSL rating applies.
Application Notes and Design Data
Application Notes and design data including S-parameters are available on request at www.rfmd.com.
Reliability
An MTTF of in excess of 9 million hours at a channel temperature of 150°C is achieved for the process used to manufacture
this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Quantity Ordering Code
Full pack (100) FMS2023-000
Small quantity (25) FMS2023-000SQ
Sample quantity (3) FMS2023-000S3
6 of 6 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FMS2023
