SEMICONDUCTOR TOSHIBA TECHNICAL DATA (6N137) DEGITAL LOGIC ISOLATION. TELE-COMMUNICATION. ANALOG DATA EQUIPMENT CONTROL The TOSHIBA 6N137 consist of a high emitting diode and a one chip photo IC. This unit is 8-lead DIP package. LSTTL/TTL Compatible : 5V Supply Ultra High Speed : 10 MBd e Guaranteed Performance Over Temperature : @ High Isolation Voltage +: 2500Vrms Min. TOSHIBA PHOTOCOUPLER 6N1 37 GaAfAs IRDE & PHOTO IC 0C to 70C Unit in mm 6.440.265 0540.1, 7.6220.25, $6640.25 <7 UL Recognized : UL1577, File No. E67349 sais 7.85~880 PIN CONFIGURATIONS (TOP VIEW) iq 18 1. NEC. 5. GND 20 17 2 ANODE 6. OUTPUT (OPEN COLLECTOR) | JEDEC _ 3 1s55.h 6 3. CATHODE 7. ENABLE ELAJ _ 4. NC. 8. Vi 4g As ce TOSHIBA 11-1004 Weight : 0.54 RECOMMENDED OPERATING CONDITIONS 8 8 CHARACTERISTIC SYMBOL | MIN. | MAX.| UNIT Input Current, Low Level Each Channel IFL 0 250 | pA Input Current, High Level Each Channel Ira 7 20 | mA High Level Enable Voltage VEH 20 |Vcec}] V Low Level Enable Voltage (Output High) VEL 0 0.8 Vv Supply Voltage, Output Vcc 4.5 5.5 Vv Fan Out (TTL LOAD) N 8 Operating Temperature Ta 0 70} C TRUTH TABLE Ip . Lec + 2 Io 8 Voc INPUT | ENABLE | OUTPUT VF T2 vo _ 6 H H L 3 ' GND L H H 7 Ip 5 H L H VE L L H The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by 6N 1 37 = 1 TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ 1996 _ 4 _ 8 These TOSHIBA products are intended for use in general commercial applications (office equipment, communication equipment, measuring equiprnent, domestic appliances, etc.). please make sure that you consult with us before you use these TOSHIBA products in equipment which requires extraordinarily high quality and/or reliability, and in equipment which may involve life threatening or critical application, including but not limited to such uses as atomic energy control, airplane or spaceship instrumentation, traffic signals, medical instrumentation, combustion control, all types of safety devices, etc. TOSHIBA cannot accept and hereby disclaims liability for any damage which may occur in case the TOSHIBA products are used in such equipment or applications without prior consultation with TOSHIBA. TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA ON137 TECHNICAL DATA (6N137) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT a Forward Current Ip 20 mA a Pulse Forward Current (Note 1) Ipp 40 mA Reverse Voltage VR 5 Vv Output Current Io 50 mA fc | Output Voltage Vo 7 Vv B |Supply Voltage (1 minute Maximum) Veco Vv & & |Enable Input Voltage 5 (Not to exceed Voc by more than 500mV) VEH 5.9 Output Collector Power Dissipation Po 85 mW Operating Temperature Range Topr 0~70 C Storage Temperature Range Tstg 55~125 C Lead Solder Temperature (10s) (Note 2) Tgol 260 C Note 1 : 50% duty cycle, lms Pulse width. Note 2 : Soldering portion of lead : up to 2mm from the body of the device. PRECAUTION Please be careful of the followings. A ceramic capacitor (0.1/F) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1cm. 6N137-2 1996 -4-8 TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA 6N137 TECHNICAL DATA (6N137) ELECTRICAL CHARACTERISTICS OVER RECOMMENDED TEMPERATURE (Ta=0~70C Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. **TYP| MAX. | UNIT : Vcc=5.5V, Vo =5.5V 1] 2 A High Level Output Current | Ip Tp= 250A, Vp=2.0V 50] 4 Voc=5.5V, Ip=5mA Low Level Output Voltage VOL VE =2.0V 0.4 0.6 Vv Ip, Sinking) =13mA High Level Enable Current IrH Vcc=5.5V, VE=2.0V -10)/ | mA Low Level Enable Current IEL Vcc=5.5V, Vp=0.5V -16 |-2.0 | mA High Level Supply Current IccH Vcc=5.5V, Ip=0, VR=0.5V 7 15 | mA Vcc =5.5V, Ip=10mA Low Level Supply Current Iccu VE=0.5V 12 18 | mA Resistance (Input-Output) VLO =500V, Ta=25C 12 (Note) | FEO | RE<60% | y=] 2 Capacitance (Input-Output) = =25 . F (Note) CLo f=1MHz, Ta=25C 0.6 Pp Input Forward Voltage VE Ip=10mA, Ta=25C 1.65 | 1.75 Input Reverse Breakdown B Ip=10uA, Ta=25 _ Voltage VR R=10uA, Ta=25C Input Capacitance CIN VF=0, f=1MHz 45] pF Current Transfer Ratio CTR Ip=5.0mA, Rz,=1000 1000 | % KX All typical values are at VoCG=5V, Ta=25C Note : Pins 1, 2, 3 and 4 shorted together and Pins 5, 6, 7 and 8 shorted together. 6N137 -3 1996 -4-8 TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA ON137 TECHNICAL DATA (6N137) SWITCHING CHARACTERISTICS (Ta = 25C, Vcc = 5V) TEST CHARACTERISTIC SYMBOL CIRCUIT TEST CONDITION MIN. | TYP. | MAX. | UNIT Propagation Delay Time to Ry, =3500, CL. =15pF High Output Level tpLH 1 ltp=7.5mA 60) 75 | ns Propagation Delay Time to Ry, =8500, CL,=15pF Low Output Level pHL 1 Ip=7.5mA 7 60) 7% ns Output Rise-Fall Time Ry, =3500, Cy, =15pF (10-90%) tr tf iip=7.5mA | 30} | as Ry,,=3500, CL =15pF Propagation Delay Time of Ip=7.5mA Enable from Vey to Vey, | LH 2 |W =3.0V | 2) | as VEL=0.5V Ry, =3500, Cy,=15pF Propagation Delay Time of Ip=7.5mA 2 2 Enable from VR], to VEH BHL VEH =3.0V 5 ns VEL=0.5V Common Mode Transient nooo, Immunity at Logie High CMyy 3 L= | 200] |v/zps Output Level VO Gnin.)=2V Ip=0mA Common Mode Transient oO, Immunity at Logie Low CMz, 3 You =0.8V |-500/ |V/us max.) =U. Output Level Ip=5mA 6N137-4 1996-4-8 TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA TECHNICAL DATA 6N137 (6N137) TEST CIRCUIT 1. tpHL and tpLH 350mV (Ip=7.5mA) \ 175mV (Ip=3.75mA) INPUT OUTPUT Vo VOL PULSE 1 GENERATOR LI nom | 3 VOH MONITORING IF NODE G tt Vec [8 r o.1pFL 7 M = RL =BY- 6 J + OUTPUT 5} +" F vo GND 15] MONITOR- ING NODE 47 b CL is approximately 15pp which includes probe and stray wiring capacitance. TEST CIRCUIT 2. teLH and tEHL INPUT VE OUTPUT Vo INPUT VE MONITORING NODE PULSE GENERATOR Zo= 500 tR=5ns Ey 1 7.5mA 2 de Ip 3 Lt Le! J TPIETE] : RL Tpass| VO Cy, LOUTPUT MONITOR- ING NODE 7 7 Cy, is approximately 15pF which includes prove and stray wiring capacitance. TEST CIRCUIT 3. Transient Immunity and Typical Waveforms TTT 10V 90% 10% 10% 90% ov Ltr tf Vo <a 5V SWITCH AT A : Ip=0mA fe VO VOL SWITCHING AT B : IF=5mA s MES VFF FLEE] e U | x le] O.1uF BY- P 5V = RL PASS Fr] PULSE GEN V = M Zp = 500, ( Cc VO \/ 6N1 37-5 1996 -4-8 TOSHIBA CORPORATIONTOSHIBA SEMICONDUCTOR 6N137 TECHNICAL DATA (6N137) FORWARD CURRENT Ip (mA) OUTPUT VOLTAGE Vo (CV) OUTPUT VOLTAGE Vo (V) Ip VE ATF/ATa Ip Ta=25C FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mvV/C) A 0.1 0.3 1 3 10 30 0.01 1.0 1.2 14 16 18 FORWARD CURRENT Ip (mA) FORWARD VOLTAGE Vp (V) IoH Ta Ip=250uA Vcc =5.5V Vo=5.5V Vo IF Vcc=5v Ta =25C (pA) HIGH LEVEL OUTPUT CURRENT lOH 0 10 20 30 40 50 60 70 AMBIENT TEMPERATURE Ta (C) 0 1 2 3 4 5 6 FORWARD CURRENT If (mA) VOL Ta Vo - IF Voc=5Vv Rp =3500 eece RL=4kQ (Vv) LOW IEVEL OUTPUT VOLTAGE VoL 1 2 3 4 5 6 0 20 40 60 80 FORWARD CURRENT Ip (mA) AMBIENT TEMPERATURE Ta (C) 6N137-6 1996 -4-8 TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA TECHNICAL DATA 6N137 (6N137) tpHL: tpLH IF tpLH Ry =4kQ, tpLH 1kO, t t 3500, pHL | *pLH 3500, 1kQ. 4kQ, PROPAGATION DELAY TIME tplIL) tpLH = (ns) Ta=25C Voc=5v 7 9 11 13 15 17 19 FORWARD CURRENT Ip (mA) tr, ty ~ Ta RISE, FALL TIME ty, tg (ns) 0 10 20 30 40 50 60 70 AMBIENT TEMPERATURE Ta (C) PROPAGATION DELAY TIME tpHL tpLH (ms) (ng) ENABLE PROPAGATION DELAY TIME tEHL tELH tpHL; tpLH Ta tpLH tpLH 10 20 30 40 50 60 70 AMBIENT TEMPERATURE Ta (C) tEHL, tELH Ta Voc=5v VEH=8V Rp =4k0 Ip=7.5mA tELH 10 20 30 40 50 60 70 AMBIENT TEMPERATURE Ta (C) 6N137 -7* 1996 -4-8 TOSHIBA CORPORATION