4-43
4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
Features
• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD3 @ Pout of
21␣ dBm per Tone, 900␣ MHz,
Typ.
• 50% Smaller than SOT-223
Package
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
AT-31625
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
EMITTER 1 2
BASE 3 EMITTER
COLLECTOR
4
5965-5911E
4-44
AT-31625 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.4
VCBO Collector-Base Voltage V 16.0
VCEO Collector-Emitter Voltage V 9.5
ICCollector Current mA 320
PTPower Dissipation[2] W 1.0
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[3]:
θjc = 65°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 15.4 mW/°C for Tc > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE = 4.8 V, Ic= 50 mA, Tj=150°C,
1-2␣ µm “hot-spot” resolution.
Electrical Specifications, TC = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A,
unless otherwise specified
Pout Output Power[1] Pin = +19 dBm dBm +27.0 +28.0
ηCCollector Efficiency[1] Pin = +19 dBm % 55 70
IMD33rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dBc -31
Pout each Tone = +21 dBm [1] F2 = 901 MHz
Mismatch Tolerance, No Damage[1] Pout = +28 dBm 7:1
any phase, 2 sec duration
BVEBO Emitter-Base Breakdown Voltage IE = 0.2 mA, open collector V 1.4
BVCBO Collector-Base Breakdown Voltage IC = 1.0 mA, open emitter V 16.0
BVCEO Collector-Emitter Breakdown Voltage IC = 5.0 mA, open base V 9.5
hFE Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330
ICEO Collector Leakage Current VCEO = 5 V µA15
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
4-45
AT-31625 Typical Performance, TC = 25°C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified.
0
10
20
30
40
100
90
50
60
80
70
21412641081816 2220
OUTPUT POWER
(dBm)
COLLECTOR EFFICIENCY
(%)
INPUT POWER (dBm)
Figure 1. Output Power and Collector
Efficiency vs. Input Power.
OUTPUT POWER
(dBm)
INPUT POWER (dBm)
Figure 2. Output Power vs. Input
Power Over Bias Voltage.
COLLECTOR EFFICIENCY
(%)
INPUT POWER (dBm)
Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.
Figure 5. IMD
3
, IMD
5
vs. Output
Power Per Tone.
Figure 7. Input and Output Return
Loss vs. Frequency.
12 1814 16 20 22
P
out
η
c
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
14
18
16
20
22
32
26
24
30
28
OUTPUT POWER
(dBm)
INPUT POWER (dBm)
Figure 4. Output Power vs. Input
Power Over Temperature.
T
C
= +85°C
T
C
= +25°C
T
C
= –40°C
3.0 V
3.6 V
4.8 V
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
3.0 V
3.6 V
4.8 V
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
IMD
(dBc)
OUTPUT POWER/TONE (dBm)
81410 12 16 18 22 2420
IMD
3
IMD
5
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
RETURN LOSS
(dB)
FREQUENCY (MHz)
30
40
50
60
100
70
80
90
800 850 950 1000900
Output R.L.
Input R.L.
11
13
15
17
31
19
21
23
25
27
29
0
10
20
30
40
100
90
50
60
80
70
800 920840 880 960 1000
OUTPUT POWER
(dBm)
COLLECTOR EFFICIENCY
(%)
FREQUENCY (MHz)
Figure 6. Output Power and Collector
Efficiency vs. Frequency.
Note: Tuned at 900 MHz, then Swept over
Frequency.
P
out
P
in
= +19 dBm
η
c
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
26.0
26.5
27.0
27.5
31.0
28.0
28.5
29.0
29.5
30.0
30.5
141261081816 2220
Γ
source
= 0.73 ∠ -156
Γ
load
= 0.42 ∠ -179
12
14
16
18
32
20
22
24
26
28
30
141261081816 2220 -50
-45
-40
-35
0
-30
-25
-20
-15
-10
-5
-18
-14
-16
-12
-10
0
-6
-8
-2
-4
4-46
AT-31625 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 5 mA, Pout␣ =␣ +28.0 dBm
Freq. Γ source Γ load
MHz Mag. Ang. Mag. Ang.
800 0.661 -149.0 0.382 -171.3
825 0.679 -150.6 0.394 -172.8
850 0.697 -152.4 0.403 -174.6
875 0.712 -154.2 0.412 -176.5
900 0.727 -155.8 0.422 -179.0
925 0.740 -157.5 0.426 179.3
950 0.754 -159.0 0.432 177.2
975 0.767 -160.4 0.437 174.9
1000 0.777 -162.1 0.438 172.5
2.0
2.5
3.0
5.5
4.5
5.0
3.5
4.0
0462108
Ccb
(pF)
Vcb (V)
Figure 8. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model Packaged Model
C
CPad
CPad
Die Area = 1.2
CPad = 0.43 pF E1
B
E2
CPad
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
150
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
1.4E-12
0.4776
0.2508
0.001
0.999
5.06E-12
1.148
0.5965
0.752
0
0.01
2.488
1.288
CC
Cbc
Cbe Cce
Lb1 Lc1
Die
Label
Cbc
Cbe
Cce
Lb1
Lb2
Rb2
Le1
Lc1
Value
0.009 pF
1.20 pF
0.48 pF
1.53 nH
0.045 nH
0.1 Ω
0.38 nH
0.47 nH
Lb2
Rb2
E1
E
Le1
0.2 Ω
0.2 Ω
BB
E2
4-47
AT-31625 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
V CE = 3.0 V, Ic = 200 mA, Tc = 25°C
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.05 0.72 -150 30.7 34.19 113 -34.0 0.02 40 0.56 -120
0.10 0.77 -166 25.3 18.43 99 -34.0 0.02 42 0.52 -148
0.25 0.79 179 17.5 7.54 86 -28.0 0.04 57 0.51 -169
0.50 0.79 169 11.6 3.81 74 -23.1 0.07 64 0.51 -178
0.75 0.79 161 8.2 2.58 65 -20.9 0.09 63 0.52 177
0.90 0.79 156 6.7 2.17 59 -19.2 0.11 62 0.52 175
1.00 0.79 153 5.9 1.97 56 -18.4 0.12 61 0.52 174
1.25 0.79 146 4.1 1.61 48 -16.5 0.15 58 0.53 170
1.50 0.79 140 2.7 1.37 40 -14.9 0.18 54 0.54 167
1.75 0.79 133 1.7 1.21 32 -13.6 0.21 49 0.54 164
2.00 0.79 126 0.7 1.09 26 -12.8 0.23 45 0.55 160
2.25 0.79 120 0.0 1.00 19 -11.7 0.26 41 0.55 156
2.50 0.79 114 -0.6 0.93 13 -11.1 0.28 36 0.56 152
V CE = 3.6 V, Ic = 200 mA, Tc = 25°C
0.05 0.71 -148 31.2 36.39 114 -34.0 0.02 41 0.56 -117
0.10 0.76 -165 25.9 19.69 100 -34.0 0.02 43 0.51 -146
0.25 0.78 180 18.1 8.06 86 -28.0 0.04 57 0.50 -168
0.50 0.78 169 12.2 4.07 75 -24.4 0.06 64 0.50 -177
0.75 0.78 161 8.8 2.75 65 -20.9 0.09 64 0.51 178
0.90 0.78 156 7.3 2.31 60 -19.2 0.11 62 0.51 176
1.00 0.78 153 6.4 2.10 56 -18.4 0.12 61 0.51 174
1.25 0.78 146 4.7 1.71 48 -16.5 0.15 58 0.52 171
1.50 0.78 140 3.3 1.46 40 -14.9 0.18 54 0.53 168
1.75 0.78 133 2.1 1.28 33 -14.0 0.20 50 0.54 164
2.00 0.78 127 1.3 1.16 26 -12.8 0.23 46 0.54 161
2.25 0.78 121 0.4 1.05 19 -11.7 0.26 41 0.55 157
2.50 0.78 115 -0.2 0.98 13 -11.1 0.28 37 0.55 153
V CE = 4.8 V, Ic = 200 mA, Tc = 25°C
0.05 0.70 -145 31.7 38.47 115 -34.0 0.02 41 0.56 -114
0.10 0.75 -164 26.4 20.90 100 -34.0 0.02 43 0.50 -144
0.25 0.77 -180 18.7 8.57 87 -28.0 0.04 57 0.49 -167
0.50 0.77 169 12.7 4.33 75 -24.4 0.06 64 0.49 -176
0.75 0.77 161 9.3 2.92 66 -20.9 0.09 64 0.49 179
0.90 0.77 157 7.8 2.45 60 -19.2 0.11 62 0.50 176
1.00 0.77 154 7.0 2.23 57 -18.4 0.12 61 0.50 175
1.25 0.77 147 5.2 1.81 48 -16.5 0.15 58 0.51 172
1.50 0.77 140 3.8 1.54 41 -14.9 0.18 54 0.51 168
1.75 0.77 134 2.6 1.35 33 -14.0 0.20 50 0.52 165
2.00 0.77 127 1.7 1.22 27 -12.8 0.23 46 0.53 162
2.25 0.77 121 0.9 1.11 20 -12.0 0.25 41 0.54 158
2.50 0.77 115 0.3 1.03 13 -11.1 0.28 37 0.54 154
Typical Performance
-5
0
35
5
10
15
20
25
30
0.05 0.25 0.75 2.502.00
GAIN
(dB)
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 3.0V,
Ic = 200 mA.
1.00 1.50
MSG
MAG
MSG
|S
21
|
2
-5
0
35
5
10
15
20
25
30
0.05 0.25 0.75 2.502.00
GAIN
(dB)
FREQUENCY (GHz)
Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 3.6V,
Ic = 200 mA.
1.00 1.50
MSG
MAG
MSG
|S
21
|
2
0
35
5
10
15
20
25
30
0.05 0.25 0.75 2.502.00
GAIN
(dB)
FREQUENCY (GHz)
Figure 11. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 4.8V,
Ic = 200 mA.
1.00 1.50
MSG
MAG
MSG
|S
21
|
2
4-48
AT-31625 Typical Performance, TC = 25°C
Frequency = 1800 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B,
unless otherwise specified.
AT-31625 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 15 mA, Pout␣ =␣ +25.0 dBm
Freq. Γ source Γ load
MHz Mag. Ang. Mag. Ang.
1700 0.717 -131.8 0.373 -174.3
1725 0.724 -132.6 0.378 -175.6
1750 0.732 -133.4 0.381 -176.7
1775 0.743 -134.3 0.386 -177.9
1800 0.752 -135.4 0.390 -179.1
1825 0.763 -136.3 0.394 179.5
1850 0.773 -137.0 0.397 178.4
1875 0.780 -137.8 0.401 177.1
1900 0.788 -138.7 0.403 175.7
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Figure 12. Output Power and
Collector Efficiency vs. Input Power. Figure 13. Input and Output Return
Loss vs. Frequency.
0124 8 16 20 24
Γsource = 0.75 ∠ -135
Γload = 0.39 ∠ -179 Γsource = 0.75 ∠ -135
Γload = 0.39 ∠ -179
RETURN LOSS (dB)
FREQUENCY (MHz)
0
5
10
15
35
20
25
30
1700 1750 1850 19001800
Output R.L.
Input R.L.
0
10
20
30
40
50
60
70
COLLECTOR EFFICIENCY (%)
Pout
ηc
-25
-15
-20
-10
-5
0
4-49
Test Circuit A: Test Circuit Board Layout @ 900 MHz
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz
VBB
R1
T1
L1
R2
R3
C3
C2 C6
R4
VCC
VCC
C5
R5 L2 C8 C9
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 pF
100.0 nF
6.8 pF
100.0 nF
100.0 pF
2.7 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
9/96
OUTPUTINPUT B–MFG0141
C1
C10
C4 C7
PA3 DEMO
76.2 (3.0)
38.1 (1.5)
VBB
CW Test
VCE = 4.8 V
ICQ = 5.0 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
750 Ω
V
BB
V
CC
2.2 Ω
RF IN
100 pF
2.2 Ω100 nF
10 Ω
80 Ω80 Ω
50 Ω
50 Ω
λ/4 @ 900 MHz λ/4 @ 900 MHz
18 µH
B
CE
DC
Transistor
100 pF 100 pF
6.8 pF = 5.38 (.212)
100 pF
RF OUT
2.7 pF
= 19.91 (.784)
10 Ω
18 µH100 nF 1.5 µF 10 µF
CW Test
V
CE
= 4.8 V
I
CQ
= 5.0 mA
Freq. = 900 MHz
4-50
Test Circuit B: Test Circuit Board Layout @ 1800 MHz
VBB
R1
T1
L1
R2
R3
C3
C2
R4
VCC
VCC
C5
R5 L2 C8 C9
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 pF
100.0 nF
3.0 pF
100.0 nF
1.4 pF
100.0 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
350.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
9/96
OUTPUTINPUT B–MFG0141
C1
C10
C4 C6
PA3 DEMO
76.2 (3.0)
38.1 (1.5)
VBB
CW Test
VCE = 4.8 V
ICQ = 15.0 mA
Freq. = 1800 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
C7
Test Circuit B: Test Circuit Schematic Diagram @ 1800 MHz
350 Ω
V
BB
V
CC
2.2 Ω
RF IN
100 pF
2.2 Ω100 nF
10 Ω
80 Ω80 Ω
50 Ω
50 Ω
λ/4 @ 1800 MHz λ/4 @ 1800 MHz
18 µH
B
CE
DC
Transistor
100 pF 100 pF
3.0 pF = 0.89 (.035)
100 pF
RF OUT
1.4 pF
= 10.49 (.413)
10 Ω
18 µH100 nF 1.5 µF 10 µF
CW Test
V
CE
= 4.8 V
I
CQ
= 15.0 mA
Freq. = 1800 MHz
4-51
Part Number Ordering Information
Part Number No. of Devices Container
AT-31625-TR1 1000 7" Reel
AT-31625-BLK 25 Carrier Tape
Package Dimensions
MSOP-3 Surface Mount Plastic Package
LEAD TIP
COPLANARITY
SEATING
PLANE
TOP VIEW
SIDE VIEW
DETAIL A
NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4.80/5.00
(.189/.197)
2.64/2.82
(.104/.111)
R 0.25 (.010) MAX
4.62/5.03
(.182/.198)
1.91
(.075)
BASIC
PIN 1
0.76 REF
(.030)
0.51 (.020) DIA X
0.15 (.006) DEEP
REF
0.76 REF
(.030)
3.12/3.23
(.123/.127)
0.18/0.25
(.007/.010)
1.09/1.42
(.043/.056)
SEE DETAIL A
1.22/1.60
(.048/.063)
0.58/0.69
(.023/.027)
0.10 (.004)
0.41/0.86
(.016/.034)
0.10/0.25
(.004/.010)
R 0.20 (.008) MIN
R 0.20/0.33
(.008/.013)0.25 (.010)
GAUGE PLANE
SEATING
PLANE
0° MIN/8° MAX
4-52
Tape Dimensions and Product Orientation for Package MSOP-3
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
1.75
(.069)
R 0.3
(.012)
0.30 ± 0.05
(.012 ± .002)
5.2
(.205)
1.5
(.059)
1.5 (.059)
5.50 ± 0.05
(.217 ± .002)
1.75 (.069)
R 0.5 (.020) TYP 8.0
(.315)
4.0 (.157)
2.00 ± 0.05
(.079 ± .002)
NOTES:
1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. TOLERANCES: .X ± 0.1 (.XXX ± .004)
12.0 ± 0.3
(.472 ± .012)
5.2
(.205)
