SK25GB065 # 4 0/ 7* Absolute Maximum Ratings Symbol Conditions IGBT 8,1 #9 4 0/ 7 $ #9 4 50/ 7 $>? IGBT Module SK25GB065 8 4 .;; 8A 8%, B 0; 8A 8,1 C -;; 8 Units -;; 8 .; < # 4 =; 7 05 < -; < @ 0; 8 #9 4 50/ 7 5; D # 4 0/ 7 .- < # 4 =; 7 0F < G; < 0;; < $>?4 0 $ Values # 4 0/ 7 8%,1 SEMITOP(R) 1 Inverse Diode $E #9 4 5/; 7 $E>? $E>?4 0 $E $E1? 4 5; A 2 #9 4 5/; 7 Module $ >?1 Preliminary Data < #29 # Features ! "#! ! $%# & ' (' ) * + ,-. /.0 Typical Applications* 1 2 1 ("1 &+345/6) 8 <* 5 + 8%, 4 8,* $ 4 ;*G < $,1 8%, 4 ; 8* 8, 4 8,1 7 !F; +++ H50/ 7 0/;; 8 # 4 0/ 7* Characteristics Symbol Conditions IGBT 8%, !F; +++ H5/; min. typ. . F #9 4 0/ 7 max. 8, 4 ; 8* 8%, 4 0; 8 / 8 < < #9 4 0/ 7 50; #9 4 50/ 7 8,; , 8%, 4 5/ 8 8, $ 4 .; <* 8%, 4 5/ 8 8, 4 0/* 8%, 4 ; 8 < 5*0 5*. #9 4 50/ 7 5*5 ;*I 8 #9 4 0/7 0; 0. J #9 4 50/7 .. F. J 5*= 0 8 0*5 0*0 #9 4 0/7 2+ 2+ 4 5 ?) , >% 4 .. J >% 4 .. J , > 9! $%# < #9 4 0/ 7 #9 4 50/7 Units ;*5 #9 4 50/ 7 $%,1 8 4 .;;8 $4 0/< #9 4 50/ 7 8%,4@5/8 8 8 5*;*5/ E E ;*;I0 E .; ./ ;*G/ 0/; 5/ K ;*- K 5*F LMN GB 1 12-05-2008 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GB065 Characteristics Symbol Conditions Inverse Diode 8E 4 8, $E 4 0/ <A 8%, 4 ; 8 min. #9 4 0/ 7 2+ #9 4 50/ 7 SEMITOP(R) 1 IGBT Module typ. max. Units 5*F/ 5*G 8 5*F 5*G/ 8 8E; #9 4 50/ 7 ;*=/ ;*I 8 E #9 4 50/ 7 00 .0 J #9 4 50/ 7 50 < D ;*0/ K $>>? O $E 4 0/ < M 4 !/;; <MD , 84 .;;8 > 9! ? 2+ 6 5. 5*G LMN 5*/ SK25GB065 Preliminary Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ! "#! ! $%# & ' (' ) * + ,-. /.0 Typical Applications* 1 2 1 ("1 &+345/6) GB 2 12-05-2008 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GB065 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 12-05-2008 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GB065 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 12-05-2008 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GB065 UL recognized file #. 1 #. 5 no. E 63 532 * "* P 0 % 12-05-2008 DIL http://store.iiic.cc/ (c) by SEMIKRON