b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUCTURE|M/MAX. /Y200 A|TEMP| s/a T0200 TO18 u51 112b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)4 IN ORDER OF (1) CATEGORY & (2) TYPE No. 13. MISCELLANEOUS TRANSISTORS a 1|CATEGORY | MIDWG #|L C LINE TYPE U/STRUC- A|Y200 |EO DESCRIPTION No. No. S| TURE T| s/a AD E T0200 IDE Ser. 1 1 SAF526E5090P 9P i ROS | 3 [P-450mW-ISR-.61 max:RBTB2-6 6Kohms max;lp-5.88uA max. 2 2N1468 1 |N-FA Si {TOS Pc-.25W max; Ip-2.0A max; tr-10ns 3. ICK273 1IN Si |TO5 Pc-.25W max; BVCBO-25V. | 4 |CK277 TIN Si [TOS Pc-.25W max; BVCBO-90V. 5 |NS1110T 1|N Si |TO18 AZ/ICBO-1.0uA maxith-300mA;VH-9.0V;IA-2.0mA;|p-2.0A;BVCES-110V min. 6 INS1111f 1|N Si_|TO18 AZG|ICBO-1.0uA_max;th-30Q0MA;VH-9.0ViJA-2.0mAiIp-1.5A;BVCES-60V_ min. 7 NS1t12 TIN Si |TO18 AD|Pt-300 min;BVCBO-150Viic-10A peak:tr-ins maxtd-5ns max. 8 |NS1116T TIN Si |TO18 A|ICBO-1.0uA_max:Ih-300mA;VH-9.0V;IA-2.0mA;:Ip-2.5A:BVCES-190V min. 9 INS2310 LIN Si_jTO18 A|Pt-300 min;:BVCBO-120V_ minjiic-10A peak;tr-2ns_max;td-S5ns_max. 10 |NS2311 1[N Si /TO18 A@|Pt-300 min:BVCBO-120Vilc-10A peak;tr-2ns max;td-Sns max. 11 |PAOTS1 1 |P-AD Ge |TO7 Pe-85mW:BVEBO-2.0V;tr-1.0ns. 12# |RT1110 1[N-PL Si_|TO18 A |BVCES-190V max;ICBO-1.0uA_max;tr-1.0ns_max;tf-2.5ns_ max. 134 [RT1111 T]N-PL Si |TO18 A@/BVCES-120V max;ICBO-1.0uA max;tr-1.0ns max:tf-2.5ns max. 14# |RT1116 1/N-PL Si |TO18 AZ| BVCES-280V max;ICBO-1.0uUA max;tr-1.0ns max;tf-2.5ns max. 15 |SYL3013 1 N-EM Si_|T018 Pc..30W; BVCBO-75V; BVEBO-5.0V; Ic-.20A; hFE-20 min at Ic-10 ma. 16# [ASY60 2 [P-AA Ge |R47 Pc-.20W max; BVCBO-20V; fab-11.0Mc; hFE-50; ICBO-5uA max. 17# |ASY64 2 /P-AA Ge (R47 Pce-.20W max; BVCBO-30V; fab-3.5Mc; hFE-35; ICBO-3uA max. 18# |ASY66 2 |P-AA Ge |R47 Po-.20W_max; BVCBO-30V; fab-6.0Mc; hFE-35; [CBO-5uA max. 19 = =jC106* 2/P Si |TOS AB|VO-2,0mV max;hFE-30 min at VCE-.50V;RCE(SAT)-4.0 ohms max. 20 (C201 2 |P-A Si |TO5 Pe-.25W max:BVCBO-40V;IC-SOmA max;fab-.40Mc. 21 C202 2 |P-A Si_|TOS Pc-.25W_ max;BVCBO-25V;IC-5OmA_ max;fab-.80Mc. 22 (C301 2 [P-A Si {TOS Pc-.25W max,BVCBO0-70V;IC-50mA max;fab-.40Mc. 23. |C301A 2|P-A Si [TOS Pc-.25 max; BVCBO-70V; IC-5OmA MAX: FAB-.04Mc. 24 =|302 2 |P-A Si |TOS Pc..25W_max:BVCBO-12V;IC-5OmA max;fab-.80Mc. 25 [C401 2/P-A Si [TOS Pc-.25W max;BVCBO-40V;IC-50mA max:fab-.40Mc. 26 |C402 2|P-A Si |TO5 Pc. 25W max BVCBO-15VijC-50mA max;fab-.80Mc. 27__|C502 2 [P-A Si_|TO5 Pc..25W; BVCB8O0-30V; IC-50mA; BVCEO-10V. 284 |SFT185 2 |P-A Ge |TOS Pc. 15W max;BVCBO-30V;IC-100mA max;ft-2.0Mc min. 29 =|TK20C 2 |P-A Ge |R47 Pc-..20W Max; BVCBO-30V; fab-6.0 30# ITK21C 2 \P-AA Ge |R47 Po. 20W_ max; BVCBO-30V; fab-2.0Mc; hFE-21; 1CBO-3uA_max, 31# [TK24C 2 |P-A Ge [R47 Pc-.20W max; BVCBO-30V; fab-3.5 32# |TK25C 2 |P-A Ge (R47 Pc-.20W max; BVCBO-20V; fab-11.0 33 |2N2457 3 |PL Si_|TO5 Vpo-5.0V_max; ho-125u_ mhos min; hi-'SOM ohms Typ. 34 = =|2N2458 3/PL Si |TO51 Vpo-5.0V max; ho-125u mhos min; hi-100M ohms Typ. 35 |3N98 3|N Si |[RO38c Pc-150mW at 85C;Vds-32V; Id-7.7mA max. at 12V-VDS 36 |3N99 3 iN Si_|RO38c Pc-150mW_at 85C;Vds-32V; Id-10.5mA max. at 12V-VDS 37 [429-4212 3 Si [TOS N-Channel 38 11005 3)P Si |L18 Pc-1.0W;BVDSS-30V min:IDSS-35nA max:gFS-650 umho. Matched pair 39 131004 3 /P Si 4 Leaded TOS or TO46; BVDSS-25V; IDSS-100mA max; gFS-850u mhos, 40 [51009 3/P Si [RO38k BVDSS-20V min:IDSS-10nA max:gFS-70 umho;Vgs-20V max. 41 c610 3 N-A Si (TOS Pe-.25W maxVpo-20V maxho-100u mhos miniGDO-.10ua;BVGD-40V max. 42, |C611 3 |N-A Si_|TOS Pc.25W_ max;Vpo-20V_ max;ho-200u mhos min:|IGDO-.10ua;BVGD-40V_ max. 43 (C612 3 N-A Si [TOS Pc-.25W max;Vpo-20V max;ho-400u mhos min;IGDO-.10ua;BVGD-40V max. 44 |C613 3 |N-A Si |TO5S Pc-.25W max:Vpo-20V max;ho-800u mhos min;IGDO-.10ua;BVGD-40V max. 1 45 1C614 3 \N-A Si |TO5 Pc-.25W_ max;Vpo-10V_max;ho-100u mhos minJGDO-.10ua;BVGD-40V_ max. 46 C615 3 |N-A Si |TO5 Pe. 25W max:Vpo-1T0V max;ho-500u mhos min;/IGDO-.1Q0ua;BVGD-40V max. 47 C620 3(N Si |TOS Pc-.25W max;Vpo-10V max;ho-50u mhos min;IGDO-.10ua;NF-5.0db max. 48 = |C621 3 IN Si_ (TOS Pc-.25W_max;Vpo-10V_max;ho-50u_ mhos_ miniGDO-.1Qua;NF-5.Odb ma