BAR89 Silicon PIN Diode * Optimized for antenna switches in hand held applications * Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) * Low forward resistance (typ. 0.8 @ IF = 10mA) * Very low signal distortion * Pb-free (RoHS compliant) package BAR89-02LRH 1 2 Type BAR89-02LRH Package TSLP-2-7 Configuration single, leadless Maximum Ratings at T A = 25C, unless otherwise specified Parameter Symbol LS(nH) 0.4 Value Marking R Unit Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Ts 133C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 65 K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-08 BAR89 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 A Reverse current IR VR = 60 V Forward voltage V VF IF = 10 mA - 0.83 0.9 IF = 100 mA - 0.95 1.1 2 2012-08-08 BAR89 Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.25 - VR = 0 V, f = 1 GHz - 0.19 - VR = 0 V, f = 1.8 GHz - 0.18 - Reverse parallel resistance k RP VR = 0 V, f = 100 MHz - 35 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 3.5 - Forward resistance rf IF = 1 mA, f = 100 MHz - 3 - IF = 5 mA, f = 100 MHz - 1.2 - IF = 10 mA, f = 100 MHz - 0.8 1.5 rr - 800 - ns I-region width WI - 19 - m Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 1 mA, f = 1.8 GHz - 0.23 - IF = 5 mA, f = 1.8 GHz - 0.1 - IF = 10 mA, f = 1.8 GHz - 0.08 - VR = 0 V, f = 0.9 GHz - 19 - VR = 0 V, f = 1.8 GHz - 14 - VR = 0 V, f = 2.45 GHz - 11 - Isolation1) 1BAR89-02LRH ISO in series configuration, Z = 50 3 2012-08-08 BAR89 Diode capacitance CT = (VR) Reverse parallel resistance RP = (VR) f = Parameter f = Parameter 10 3 0.5 KOhm pF 10 2 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 10 1 0.3 0.25 100 MHz 1 GHz 1.8 GHz 10 0 0.2 0.15 0.1 0 2 4 6 8 10 12 14 V 16 10 -1 0 20 2 4 6 8 10 12 14 16 VR Forward resistance rf = (IF) Forward current IF = (VF) f = 100MHz TA = Parameter 10 3 20 0 10 A Ohm 10 -1 10 -2 10 2 IF rf 10 -3 10 V VR -40C +25C +85C +125C 10 -4 1 10 -5 10 -6 10 0 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 10 2 mA 10 10 -9 0 3 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2012-08-08 BAR89 Forward current IF = (TS ) Permissible Puls Load RthJS = (t p) BAR89-02LRH BAR89-02LRH 10 2 120 mA mA 100 RthJS 90 IF 80 70 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 60 50 10 0 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 C TS 10 0 tp Permissible Pulse Load Insertion loss IL = -|S21|2 = (f) IFmax/ IFDC = (t p) IF = Parameter BAR89-02LRH BAR89-02LRH in series configuration, Z = 50 10 2 0 dB mA IF |S21| -0.1 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 -0.15 10mA 5mA 1mA -0.2 -0.25 -0.3 -0.35 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 C 10 -0.4 0 1 tp 1 2 3 4 GHz 6 f 5 2012-08-08 BAR89 Isolation ISO = -|S21 |2 = (f) VR = Parameter BAR89-02LRH in series configuration, Z = 50 0 |S21| dB -10 -15 0V 1V 10 V -20 -25 -30 0 1 2 3 4 GHz 6 f 6 2012-08-08 Package TSLP-2-7 BAR89 Package Outline Top view Bottom view 0.39 +0.01 -0.03 0.6 0.05 0.05 MAX. 1 1 0.25 0.035 1) 2 10.05 0.65 0.05 2 0.5 0.035 1) Cathode marking 1) Dimension applies to plated terminal Foot Print 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel Reel o330 mm = 50.000 Pieces/Reel (optional) 0.5 Cathode marking 8 1.16 4 0.76 7 2012-08-08 BAR89 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2012-08-08 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BAR8902LRHE6327XTSA1