1
Subject to change without notice.
www.cree.com/rf
CGHV60170D
170 W, 6.0 GHz, 50V GaN HEMT Die
Cree’s CGHV60170D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater
power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 18 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% TypicalPowerAddedEfciency
• 170 W Typical PSAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
APPLICATIONS
• Broadbandampliers
• Tactical communications
• Satellite communications
• Industrial,Scientic,andMedicalampliers
• ClassAB,LinearamplierssuitableforOFDM,
W-CDMA, LTE, EDGE, CDMA waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during shipment.
Rev 1.0 – May 2017
PN: CGHV60170D
2CGHV60170D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Drain-source Voltage VDSS 150 VDC 25˚C
Gate-source Voltage VGS -10, +2 VDC 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Drain Current1IMAX 12.6 A 25˚C
MaximumForwardGateCurrent IGMAX 20.8 mA 25˚C
Thermal Resistance, Junction to Case (packaged)2RθJC 1.36 ˚C/W 85˚C,83.2WDissipation
Thermal Resistance, Junction to Case (die only) RθJC 0.83 ˚C/W 85˚C,83.2WDissipation
Mounting Temperature TS320 ˚C 30 seconds
Note1 Current limit for long term reliable operation.
Note2 Eutecticdieattachusing80/20AuSnmountedtoa10milthickCu15Mo85carrier.
Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Pinch-Off Voltage VP-3.8 -3.0 –2.3 V VDS = 10 V, ID = 20.8 mA
Drain Current1IDSS 16.8 20.8 – A VDS = 6 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBD 150 – – V VGS = -8 V, ID = 20.8 mA
On Resistance RON – 0.14 – ΩVDS = 0.1 V
GateForwardVoltage VG-ON – 1.9 – V IGS = 20.8 mA
RF Characteristics
Small Signal Gain GSS – 17 – dB VDD = 50 V, IDQ = 260 mA
Saturated Power Output2,3 PSAT – 170 – W VDD = 50 V, IDQ = 260 mA
DrainEfciency4η– 65 – % VDD = 50 V, IDQ = 260 mA, PSAT = 170 W
Intermodulation Distortion IM3 – -30 – dBc VDD = 50 V, IDQ = 260 mA,
POUT = 170 W PEP
Output Mismatch Stress VSWR – – 10 : 1 Y
No damage at all phase angles,
VDD = 50 V, IDQ = 260 mA
POUT = 170 W CW
Dynamic Characteristics
Input Capacitance CGS – 28.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS – 6.35 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
FeedbackCapacitance CGD – 0.6 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Scaled from PCM data
2 PSATisdenedasIG = 2.0 mA.
3 Pulsed100μsec,10%
4 DrainEfciency=POUT /PDC
3CGHV60170D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
DIE Dimensions (units in microns)
Overalldiesize820x5400(+0/-50)microns,diethickness100microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
• RecommendedsolderisAuSn(80/20)solder.RefertoCree’swebsitefortheEutecticDieBondProcedureapplicationnoteat
www.cree.com/RF
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C