VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1600 V 726 A 1140 A 9240 A 1.03 V 0.483 m Phase Control Thyristor 5STP 06E1600 Doc. No. 5SYA1054-01 Sep. 01 * Designed for traction, energy and industrial applications * Optimum power handling capability * Industry standard housing Blocking Part Number VDRM 5STP 06E1600 5STP 06E1400 5STP 06E1200 Conditions VRRM VRSM1 1600 V 1400 V 1200 V f = 50 Hz, tp = 10ms, Note 1 1700 V 1500 V 1300 V tp = 5ms, single pulse, Note 1 IDRM 40 mA VDRM IRRM 40 mA VRRM dV/dtcrit 1000 V/s linear. to 0.67 x VDRM, Tj = 125C Note 1: Derating factor of 0.13% per C is applicable for Tj below 25C. Mechanical data FM a Mounting force nom. 8 kN min. 6 kN max. 10 kN Acceleration Device unclamped 50 m/s2 Device clamped 100 m/s2 m Weight 0.09 kg DS Surface creepage distance 9 mm Da Air strike distance 8 mm Tj = 125C ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 06E1600 On-state ITAVM Max. average on-state current ITRMS Max. RMS on-state current 1140 A ITSM Max. peak non-repetitive 9240 A surge current 9900 A 2 It 726 A Limiting load integral Half sine wave, TC = 70C tp = 10 ms Tj = 125C tp = 8.3 ms After surge: 2 427 kA s tp = 10 ms VD = VR = 0V 2 8.3 ms 490 kA s tp = VT On-state voltage 1.51 V IT = 1000 A VT0 Threshold voltage 1.03 V IT = 500 - 3000 A rT Slope resistance 0.483 m IH Holding current <500 mA Tj = 25C >10 mA Tj = 125C 500 A/s Cont. f = 50 Hz VD 0.67VDRM , Tj = 125C Tj = 125C Switching di/dtcrit Critical rate of rise of on-state current 1000 A/s Single Pulse ITRM = 1500 A IFG = 2 A, tr = 0.5 s td Delay time 3.0 s VD = 0.4VDRM IFG = 2 A, tr = 0.5 s tq Turn-off time 150 s VD 0.67VDRM ITRM = 500 A, Tj = 125C dvD/dt = 20V/s VR = 50 V, diT/dt = -10 A/s Qrr Recovery charge min 540 As max 580 As Triggering VGT Gate trigger voltage 3.0 V Tj = 25, VD = 10 A, IT = 3 A IGT Gate trigger current 150 mA Tj = 25, VD = 10 A, IT = 3 A VGD Gate non-trigger voltage 0.25 V Tj = 25, VD = VDRM IGD Gate non-trigger current 10 mA VFGM Peak forward gate voltage 10 V IFGM Peak forward gate current 7.5 A VRGM Peak reverse gate voltage 5V PG(AV) Mean forward gate power PGM Peak forward gate power Tj = 25, VD = VDRM 2W 30 W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1054-01 Sep. 01 page 2 of 3 5STP 06E1600 Thermal Tjmax Max. operating junction temperature range Tstg Storage temperature range RthJC Thermal resistance 80 K/kW Anode side cooled junction to case 80 K/kW Cathode side cooled 40 K/kW Double side cooled Thermal resistance case to 20 K/kW Single side cooled heat sink 10 K/kW Double side cooled RthCH 125 C -40...140 C ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1054-01 Sep. 01