PE42522
Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–26.5 GHz
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-12014-6 – (2/2015)
www.psemi.com
Features
• Broad frequency support from 9 kHz to 26.5 GHz
• High port to port isolation
▪63 dB @ 3 GHz
▪58 dB @ 7.5 GHz
▪39 dB @ 13.5 GHz
▪28 dB @ 20 GHz
▪22 dB @ 26.5 GHz
• HaRP™ technology enhanced
▪Fast settling time
▪No gate and phase lag
▪No drift in insertion loss and phase
• Improved high frequency insertion loss and return
loss performance with external matching
• High ESD performance of 3.5 kV HBM on all pins
• Packaging – 29-lead 4 × 4 mm LGA
Applications
• Test and measurement
• Microwave backhaul
• Radar
Product Description
The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity
performance and has exceptional settling time making this device ideal for many broadband wireless applica-
tions. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42522 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Figure 1 • PE42522 Functional Diagram
RFC
50Ω 50Ω
CMOS Control Driver
RF2RF1
V1 VSS_EXT
PE42522
UltraCMOS® SPDT RF Switch
Page 2 DOC-12014-6 – (2/2015)
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Optional External VSS Control
For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 2.
When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage
generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42522
Parameter/Condition Min Max Unit
Supply voltage, VDD –0.3 5.5 V
Digital input voltage, V1 –0.3 3.6 V
RF input power, CW (RFC–RFX)(1)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
33
Fig. 4
dBm
dBm
dBm
RF input power, pulsed (RFC–RFX)(2)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
34
Fig. 4
dBm
dBm
dBm
RF input power into terminated ports, CW (RFX)(1)
9 kHz–1.39 MHz
>1.39 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
22
Fig. 4
dBm
dBm
dBm
Storage temperature range –65 +150 °C
ESD voltage HBM, all pins(3) 3500 V
ESD voltage MM, all pins(4) 150 V
ESD voltage CDM, all pins(5) 500 V
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 3
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Recommended Operating Conditions
Table 2 list the recommending operating condition for PE42522. Devices should not be operated outside the
recommended operating conditions listed below.
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
3) Human body model (MIL-STD 883 Method 3015).
4) Machine model (JEDEC JESD22-A115).
5) Charged device model (JEDEC JESD22-C101).
Table 2 • Recommended Operating Condition for PE42522
Parameter Min Typ Max Unit
Normal mode (VSS_EXT = 0V)(1)
Supply voltage, VDD 2.3 5.5 V
Supply current, IDD 120 200 μA
Bypass mode (VSS_EXT = –3.4V)(2)
Supply voltage, VDD
(VDD ≥3.4V for Table 3 full spec. compliance) 2.7 3.4 5.5 V
Supply current, IDD 50 80 μA
Negative supply voltage, VSS_EXT –3.6 –3.2 V
Negative supply current, ISS –40 –16 μA
Normal or Bypass mode
Digital input high, V1 1.17 3.6 V
Digital input low, V1 –0.3 0.6 V
RF input power, CW (RFC–RFX)(3)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
30
Fig. 4
dBm
dBm
dBm
RF input power, pulsed (RFC–RFX)(4)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
32
Fig. 4
dBm
dBm
dBm
Table 1 • Absolute Maximum Ratings for PE42522 (Cont.)
Parameter/Condition Min Max Unit
PE42522
UltraCMOS® SPDT RF Switch
Page 4 DOC-12014-6 – (2/2015)
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Electrical Specifications
Table 3 provides the PE42522 key electrical specifications at 25 °C (ZS = ZL = 50Ω), unless otherwise specified.
Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.4V.
RF input power into terminated ports, CW (RFX)(3)
9 kHz–1.39 MHz
>1.39 MHz–18 GHz
>18–26.5 GHz
Fig. 2, Fig. 3
20
Fig. 4
dBm
dBm
dBm
Operating temperature range, TOP –40 +25 +85 °C
Notes:
1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50Ω.
4) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
Table 3 • PE42522 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operating frequency 9 kHz 26.5 GHz As
shown
Insertion loss(3) RFC–RFX
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
0.70
1.05
1.15
1.70
1.70
2.55
3.15
4.20
5.30
0.85
1.40
1.50
2.15
2.40
3.25
4.40
5.45
6.95
dB
dB
dB
dB
dB
dB
dB
dB
dB
Table 2 • Recommended Operating Condition for PE42522 (Cont.)
Parameter Min Typ Max Unit
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 5
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Isolation
RFX–RFX
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
70
62
48
42
36
26
23
19
18
80
64
50
44
38
28
25
21
20
dB
dB
dB
dB
dB
dB
dB
dB
dB
RFC–RFX
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
65
61
55
48
37
28
26
21
19
73
63
58
51
39
30
28
23
22
dB
dB
dB
dB
dB
dB
dB
dB
dB
Return loss
(active port)(3) RFC–RFX
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
23
18
16
15
20
13
7
5
6
dB
dB
dB
dB
dB
dB
dB
dB
dB
Return loss
(RFC port)(3) RFC–RFX
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
23
19
27
27
20
23
10
6
7
dB
dB
dB
dB
dB
dB
dB
dB
dB
Return loss (off port) All ports
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–18000 MHz
18000–20000 MHz
20000–24000 MHz
24000–26500 MHz
30
23
15
13
14
8
6
3
2
dB
dB
dB
dB
dB
dB
dB
dB
dB
Table 3 • PE42522 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
PE42522
UltraCMOS® SPDT RF Switch
Page 6 DOC-12014-6 – (2/2015)
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Switching Frequency
The PE42522 has a maximum 25 kHz switching rate
in normal mode (pin 29 tied to ground). A faster
switching rate is available in bypass mode (pin 29 tied
to VSS_EXT). The rate at which the PE42522 can be
switched is then limited to the switching time as
specified in Table 3.
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Spur-Free Performance
The typical spurious performance of the PE42522 in
normal mode is –125 dBm (pin 29 tied to ground). If
spur-free performance is desired, the internal
negative voltage generator can be disabled by
applying a negative voltage to VSS_EXT (pin 29).
Hot-Switching Capability
The maximum hot switching capability of the PE42522
is 20 dBm from 1.4 MHz to 18 GHz. The maximum hot
switching capability below 1.4 MHz and above 18 GHz
does not exceed the maximum RF CW terminated
power, see Figure 2–Figure 4. Hot switching occurs
when RF power is applied while switching between
RF ports.
Control Logic
Table 4 provides the control logic truth table for
PE42522.
Input 0.1dB compression
point(4) RFC–RFX Fig. 2
Fig. 3
Fig. 4
dBm
dBm
dBm
Input IP2 RFC–RFX 10–18000 MHz 121 dBm
Input IP3 RFC–RFX 10–18000 MHz 59 dBm
Settling time 50% CTRL to 0.05 dB final value 7 10 μs
Switching time 50% CTRL to 90% or 10% of RF 3 4.5 μs
Notes:
1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator.
3) High frequency performance can be improved by external matching (see Figure 19–Figure 21).
4) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
Table 3 • PE42522 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
Table 4 • Truth Table for PE42522
State V1
RF1 ON 0
RF2 ON 1
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 7
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Figure 2 • Power De-rating Curve (9 kHz–18 GHz) @ 25 °C Ambient (50Ω)
-5
0
5
10
15
20
25
30
35
Input Power (dBm)
Frequency (MHz)
P0.1 dB Compression @ 25°C Ambient
Max. RF Input Power, Pulsed (≥ 2.7 MHz, 25°C Ambient)
Max. RF Input Power, CW (≥ 2.7 MHz, 25°C Ambient)
Max. RF Input Power, CW & Pulsed (< 2.7 MHz, 25°C Ambient)
Max. RF Terminated Power, CW @ 25°C Ambient
Figure 3 • Power De-rating Curve (9 kHz–18 GHz) @ 85 °C Ambient (50Ω)
-5
0
5
10
15
20
25
30
35
Input Power (dBm)
Frequency (MHz)
P0.1 dB Compression @ 85°C Ambient
Max. RF Input Power, Pulsed (≥ 2.9 MHz, 85°C Ambient)
Max. RF Input Power, CW (≥ 2.9 MHz, 85°C Ambient)
Max. RF Input Power, CW & Pulsed (< 2.9 MHz, 85°C Ambient)
Max. RF Terminated Power, CW @ 85°C Ambient
PE42522
UltraCMOS® SPDT RF Switch
Page 8 DOC-12014-6 – (2/2015)
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Figure 4 • Power De-rating Curve (16–26.5 GHz) @ 25 °C and 85 °C Ambient (50Ω)
14
16
18
20
22
24
26
28
30
32
34
36
16 18 20 22 24 26
Input Power (dBm)
Frequency (GHz)
Abs. Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient
P0.1 dB Compression / Abs. Max. RF Input Power, CW @ 25°C & 85°C Ambient
Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient
Max. RF Input Power, CW @ 25°C & 85°C Ambient
Abs. Max. RF Terminated Power @ 25°C & 85°C Ambient
Max. RF Terminated Power, CW @ 25°C & 85°C Ambient
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 9
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Typical Performance Data
Figure 5–Figure 17 show the typical performance data at 25 °C and VDD = 3.3V (ZS = ZL = 50Ω) unless
otherwise specified.
Figure 5 • Insertion Loss (RFC–RFX)(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−10
−8
−6
−4
−2
0
Frequency (GHz)
Insertion Loss (dB)
RF1 RF2
PE42522
UltraCMOS® SPDT RF Switch
Page 10 DOC-12014-6 – (2/2015)
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Figure 6 • Insertion Loss vs Temperature (RFC–RFX)(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−10
−8
−6
−4
−2
0
Insertion Loss (dB)
Frequency (GHz)
–40°C +25°C +85°C
Figure 7 • Insertion Loss vs VDD (RFC–RFX)(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−10
−8
−6
−4
−2
0
Insertion Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 11
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Figure 8 • RFC Port Return Loss vs Temperature(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
–40°C +25°C +85°C
Figure 9 • RFC Port Return Loss vs VDD(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
Page 12 DOC-12014-6 – (2/2015)
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Figure 10 • Active Port Return Loss vs Temperature(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
–40°C +25°C +85°C
Figure 11 • Active Port Return Loss vs VDD(*)
Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21).
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 13
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Figure 12 • Terminated Port Return Loss vs Temperature
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
–40°C +25°C +85°C
Figure 13 • Terminated Port Return Loss vs VDD
0 5 10 15 20 25 26. 5
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
Page 14 DOC-12014-6 – (2/2015)
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Figure 14 • Isolation vs Temperature (RFX–RFX)
0 5 10 15 20 25 26. 5
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
–40°C +25°C +85°C
Figure 15 • Isolation vs VDD (RFX–RFX)
0 5 10 15 20 25 26. 5
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 15
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Figure 16 • Isolation vs Temperature (RFC–RFX)
0 5 10 15 20 25 26. 5
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
–40°C +25°C +85°C
Figure 17 • Isolation vs VDD (RFC–RFX)
0 5 10 15 20 25 26. 5
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
2.3V 3.3V 5.5V
PE42522
UltraCMOS® SPDT RF Switch
Page 16 DOC-12014-6 – (2/2015)
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High Frequency Performance with External Matching
High frequency insertion loss and return loss can be further improved by external tuning traces in the customer
application board layout. Figure 18 is a sample matching network using ideal elements. Figure 19–Figure 21
show the simulated insertion loss and return loss improvement using the matching network.
Additional information on high frequency performance with external matching can be found in Application
Note 41, PE42522/523–High Frequency Performance Improvement Through Narrowband Matching.
Figure 18 • PE42522 Matching Network
SPDT
PE42522
RF1
RFC
C1ANT = 200 fF
Matching can be realized with
printed elements on the customer
application board.
C1 = 175 fF C1 = 175 fF
L1ANT = 0.225 nH
L1 = 0.285 nHL2 = 0.300 nH L2 = 0.300 nHL1 = 0.285 nH
L2ANT = 0.200 nH
RF2
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 17
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Figure 19 • Insertion Loss (RFC–RFX) With or Without Matching(*)
Note: * For reference only.
-10
-8
-6
-4
-2
0
23 23.5 24 24.5 25 25.5 26 26.5
Insertion Loss (dB)
Frequency (GHz)
Un-matched Measured DataMatched Simulated Data
Figure 20 • Active Port Return Loss With or Without Matching(*)
Note: * For reference only.
-30
-25
-20
-15
-10
-5
0
23 23.5 24 24.5 25 25.5 26 26.5
Return Loss (dB)
Frequency (GHz)
Un-matched Measured DataMatched Simulated Data
PE42522
UltraCMOS® SPDT RF Switch
Page 18 DOC-12014-6 – (2/2015)
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Figure 21 • RFC Port Return Loss With or Without Matching(*)
Note: * For reference only.
-30
-25
-20
-15
-10
-5
0
23 23.5 24 24.5 25 25.5 26 26.5
Return Loss (dB)
Frequency (GHz)
Un-matched Measured DataMatched Simulated Data
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 19
www.psemi.com
Evaluation Kit
The SPDT switch evaluation board was designed to ease customer evaluation of Peregrine's PE42522. The RF
common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are
connected through 50Ω transmission lines via SMA connectors J4 and J3 respectively. A 50 Ω through trans-
mission line is available via SMA connectors J6 and J7, which can be used to de-embed the loss of the PCB.
J13 provides DC and digital inputs to the device.
The board is constructed of a two metal layer material with a total thickness of 38 mils. The top RF layer is
Rogers 4360 material with a thickness of 32 mils and the εr = 6.4. The bottom layer provides ground for the
transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model
using a trace width of 18 mils, trace gaps of 7 mils and metal thickness of 2.1 mils.
For the true performance of the PE42522 to be realized, the PCB must be designed in such a way that RF trans-
mission lines and sensitive DC I/O traces are well isolated from one another. High frequency insertion loss and
return loss can be further improved by external tuning traces in the customer application board layout. For
further details, see “High Frequency Performance with External Matching”.
Please note that this is a generic PCB and is being used for multiple parts. Pin labeled V2 is GND.
Figure 22 • Evaluation Kit Layout for PE42522
PE42522
UltraCMOS® SPDT RF Switch
Page 20 DOC-12014-6 – (2/2015)
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Pin Information
This section provides pinout information for the
PE42522. Figure 23 shows the pin map of this device
for the available package. Table 5 provides a
description for each pin.
Figure 23 • Pin Configuration (Top View)
Exposed Ground Pads
GND
RF1
GND
VDD
GND
GND
RFC
GND
GND
GND
V1
VSS_EXT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
RF2
GND
GND
GND
GND
GND
GND
1
3
4
5
6
7
8
2
9
11
12
13
14
15
16
10 29
28
27
26
25
24
22
21
20
19
18
17
23
Pin 1 Dot
Marking
Table 5 • Pin Descriptions for PE42522
Pin No. Pin
Name Description
1, 3–11,
13–21, 23,
25–27 GND Ground
2RF2(1) RF port 2
12 RFC(1) RF common
22 RF1(1) RF port 1
24 VDD Supply voltage (nominal 3.3V)
28 V1 Digital control logic input 1
29 VSS_EXT(2) External VSS negative voltage control
Pad GND Exposed pad: ground for proper oper-
ation
Notes:
1) RF pins 2, 12 and 22 must be at 0 VDC. The RF pins do not
require DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2) Use VSS_EXT (pin 29) to bypass and disable internal negative
voltage generator . Connect VSS_EXT (pin 29) to GND (VSS_EXT =
0V) to enable internal negative voltage generator.
Use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 21
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Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE42522 in the 29-lead 4 × 4 mm LGA package is MSL3.
PE42522
UltraCMOS® SPDT RF Switch
Page 22 DOC-12014-6 – (2/2015)
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Package Drawing
Top-Marking Specification
Figure 24 • Package Mechanical Drawing for 29-lead 4 × 4 × 0.91 mm LGA
TOP VIEW BOTTOM VIEW
SIDE VIEW
RECOMMENDED LAND PATTERN
A(2X)
C
SEATING PLANE
B
(2X)
PIN #1 CORNER 4.00
4.00
1.13
(x4)
1.13
(x4)
0.46
0.49
0.10
(x29)
0.70±0.05
0.20 x45°
Chamfer
1.13 1.13
0.26x0.30
(x6)
0.33x0.34
(x18)
0.30x0.30
(x5)
0.40
3.80
3.80
0.24
(x4)
0.24
(x4)
0.47
Note:
- Dimensions concerning Pad pitch are all
mirrored across the Y-axis
0.91±0.10
0.47
0.43
0.45
0.24
(x4)
0.24
(x4)
0.43
0.47
0.47
0.45
0.45
0.45
Pin Number Pin Size (x,y) X Coordinate Y Coordinate
1(0.285x0.280) 1.7575 1.7434
2 (0.250x0.250) 1.7750 1.2750
3 (0.285x0.280) 1.7575 0.8466
4(0.285x0.280) 1.7575 0.3982
5(0.285x0.280) 1.7575 -0.0502
6(0.285x0.280) 1.7575 -0.4986
7(0.250x0.250) 1.7750 -0.9670
8 (0.285x0.280) 1.7575 -1.3954
9(0.280x0.285) 1.3652 -1.7575
10 (0.280x0.285) 0.9168 -1.7575
11 (0.280x0.285) 0.4684 -1.7575
12 (0.250x0.250) 0 -1.7750
13 (0.280x0.285) -0.4684 -1.7575
14 (0.280x0.285) -0.9168 -1.7575
15 (0.280x0.285) -1.3652 -1.7575
16 (0.285x0.280) -1.7575 -1.3954
17 (0.250x0.250) -1.7750 -0.9670
18 (0.285x0.280) -1.7575 -0.4986
19 (0.285x0.280) -1.7575 -0.0502
20 (0.285x0.280) -1.7575 0.3982
21 (0.285x0.280) -1.7575 0.8466
22 (0.250x0.250) -1.7750 1.2750
23 (0.285x0.280) -1.7575 1.7434
24 (0.210x0.250) -1 1.7750
25 (0.210x0.250) -0.600 1.7750
26 (0.210x0.250) -0.200 1.7750
27 (0.210x0.250) 0.200 1.7750
28 (0.210x0.250) 0.600 1.7750
29 (0.210x0.250) 11.7750
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 23
www.psemi.com
Tape and Reel Specification
Figure 25 • Package Marking Specifications for PE42522
Figure 26 • Tape and Reel Specifications for 29-lead 4 × 4 × 0.91 mm LGA
=
YY =
WW =
ZZZZZZ =
Pin 1 indicator
Last two digits of assembly year
Assembly work week
Assembly lot code (maximum six characters)
42522
YYWW
ZZZZZZ
Device Orientation in Tape
Pin 1
T
K0 A0
B0
P0
P1
D1
A
Section A-A
A
Direction of Feed
D0
E
W0
P2
see note 3
see
note 1
F
see note 3
A0
B0
K0
D0
D1
E
F
P0
P1
P2
T
W0
4.35
4.35
1.10
1.50 + 0.10/ -0.00
1.50 min
1.75 ± 0.10
5.50 ± 0.05
4.00
8.00
2.00 ± 0.05
0.30 ± 0.05
12.00 ± 0.30
Notes:
1. 10 Sprocket hole pitch cumulative tolerance ±0.2
2. Camber in compliance with EIA 481
3. Pocket position relative to sprocket hole measured
as true position of pocket, not pocket hole
Dimensions are in millimeters unless otherwise specified
PE42522 UltraCMOS® SPDT RF Switch
Product Specification www.psemi.com DOC-12014-6 – (2/2015)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains
design target specifications for product development. Specifications
and features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added
at a later date. Peregrine reserves the right to change specifications at
any time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to
change the specifications, Peregrine will notify customers of the
intended changes by issuing a CNF (Customer Notification Form).
Not Recommended for New Designs (NRND)
This product is in production but is not recommended for new designs.
End of Life (EOL)
This product is currently going through the EOL process. It has a
specific last-time buy date.
Obsolete
This product is discontinued. Orders are no longer accepted for this
product.
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trade-
marks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Ordering Information
Table 6 lists the available ordering codes for the PE42522 as well as available shipping methods.
Table 6 • Order Codes for PE42522
Order Codes Description Packaging Shipping Method
PE42522A-X PE42522 SPDT RF switch 29-lead 4 × 4 mm LGA 500 units / T&R
EK42522-02 PE42522 Evaluation kit Evaluation kit 1 / box
PE42522
UltraCMOS® SPDT RF Switch
DOC-12014-6 – (2/2015) Page 25
www.psemi.com
