NON-MICROWAVE CHIP RESISTORS MSTF SERIES MECHANICAL DA TA DAT W T Shown with optional Gold Back x x x x x x x x x W 0.010" 0.017" 0.050" 0.025" 0.017" 0.050" 0.100" 0.016" 0.085" x x x x x x x x x T 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" TOLERANCE (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") CHIP RESISTORS L L 0.020" 0.037" 0.050" 0.050" 0.021" 0.100" 0.100" 0.020" 0.150" SERIES MSTF 21 MSTF 110 MSTF 112 MSTF 115 MSTF 118 MSTF 120 MSTF 121 MSTF 122 MSTF 124 ELECTRICAL DA TA DAT RESIST ANCE RANGE RESISTANCE ALUMINA SILICON 2 - 150K 150K 2 - 20K 20K 2 - 1M M 2 - 200K 200K 2 - 1M M 2 - 400K 400K 2 - 1M M 2 - 250K 250K 2 - 500K 500K 2 - 100K 100K 5 - 2M M 5 - 1M M 1 00 - 3M M 1 0 - 1.5M 1.5M 2 - 500K 500K 2 - 100K 100K 1 00 - 3M M 1 0 - 1.5M 1.5M SERIES MSTF 21 MSTF 110 MSTF 112 MSTF 115 MSTF 118 MSTF 120 MSTF 121 MSTF 122 MSTF 124 ABSOLUTE TOLERANCE T.C.R. POWER RA TING RATING @ 70C 50mW 125mW 125mW 125mW 125mW 125mW 500mW 125mW 500mW 0.01%, 0.02%, 0.05%, 0.1%, 0.5%, 1%, 2%, 5%, 10% 25ppm/C ST ANDARD (NiCr); 150ppm/ ANDARD (T aN) STANDARD 150ppm/C ST STANDARD (TaN) CONSUL T SALES FOR OTHER V ALUES / TOLERANCES CONSULT VALUES SERIES DA TA DAT SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL CURRENT NOISE OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STORAGE TEMP STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ 99.6% ALUMINA ST ANDARD, QUARTZ** OPTIONAL, SILICON STANDARD, -20dB TYPICAL 100 V MAX. 5X RA TED POWER, 25 0. RATED 25 C, 5 SEC., 0. 0.225% MAX. R/R: 0.1% MSI TYPICAL 03 % MSI TYPICAL 150C, 100 HRS., 0.25% 0.25% MAX. R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. R/R: 0.1% MSI TYPICAL 107F,, 0.25% MIL-STD 202, METHOD 106, 0. 0. 0.55% MAX. R/R: 0. 0.11% MSI TYPICAL 0.5% MAX. R/R: 0.1% MSI TYPICAL 1000 HRS., 70 C, 100% POWER 70C, POWER,, 0.5% -5 -555C TO +150C +150C 2pF 0.06pF 0.02pF PART NUMBER DESIGNA TION DESIGNATION MSTF 21 110, 112 115, 118 120, 121 122, 124 XX XXXXX X X SUBSTRA TE / SUBSTRATE RESISTIVE FILM AT = Alumina / TTaN aN AN = Alumina / NiCr QT = Quartz / TTaN aN QN = Quartz / NiCr aN PT = Polished / TTaN PN = Polished / NiCr SN = Silicon / NiCr aN ST = Silicon / TTaN OHMIC VALUE TOLERANCE OPTION MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 141-C-0306 EXAMPLE: MSTF 110AN-10001F-GB = 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. S X Q B D F G J K = 0.01% = 0.02% = 0.05% = 0.1% = 0.5% = 1% = 2% = 5% = 10% = 10ppm/C = 5ppm/C = 100ppm/C = Gold Bond Pads Std.* GB = Gold Backside T = With Solder Bumps T3 = Lead-free Solder Bumps 110 Series, Alumina Substrate, 10K , 1% TTol., ol., 10K 25ppm/C, Nichrome, Gold Backside. * Always used when no other option is required. ** Consult Sales for power capabilities on Quartz substrate C D F G