MDV1525URH - MagnaChip Semiconductor

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (1)

TC=25oC (Silicon limited)

ID

37.2

A

TC=25oC (Package limited) 24

TC=70oC 24

TA=25oC 13.8(3)

TA=70oC 11.1(3)

Pulsed Drain Current IDM 60 A

Power Dissipation

TC=25oC

PD

24.5

W

TC=70oC 15.6

TA=25oC 3.4(3)

TA=70oC 2.2(3)

Single Pulse Avalanche Energy (2) EAS 48 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (1) RθJA 36 oC/W

Thermal Resistance, Junction-to-Case RθJC 5.1

MDV1525

Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ

Features

 VDS = 30V

 ID = 24A @VGS = 10V

 RDS(ON)

< 10.1mΩ @VGS = 10V

< 14.0mΩ @VGS = 4.5V

 100% UIL Tested

 100% Rg Tested

General Description

The MDV1525 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDV1525 is suitable for DC/DC converter and

general purpose applications.

D

G

S

PDFN33

S

G

S

D

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDV1525URH -55~150oC PowerDFN33 Tape & Reel 5000 units Halogen Free

Electrical Characteristics (T

J

=

25

o

C)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7

Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1

µA

TJ=55oC - - 5

Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1

Drain-Source ON Resistance RDS(ON)

VGS = 10V, ID = 11A - 8.2 10.1

mΩ TJ=125oC - 11.9 14.6

VGS = 4.5V, ID = 9A - 11.5 14.0

Forward Transconductance gfs VDS = 5V, ID = 11A - 27.3 - S

Dynamic Characteristics

Total Gate Charge Qg(10V)

VDS = 15.0V, ID = 11A,

VGS = 10V

8.8 12.6 16.4

nC

Total Gate Charge Qg(4.5V) 4.2 6.0 7.8

Gate-Source Charge Qgs - 2.5 -

Gate-Drain Charge Qgd - 1.8 -

Input Capacitance Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

568 811 1054

pF

Reverse Transfer Capacitance Crss 54 77 100

Output Capacitance Coss 108 154 200

Turn-On Delay Time td(on)

VGS = 10V, VDS = 15.0V,

ID = 11A, RG = 3.0Ω

- 6.8 -

ns

Rise Time tr - 11.8 -

Turn-Off Delay Time td(off) - 20.0 -

Fall Time tf - 7.1 -

Gate Resistance Rg f=1 MHz 1.0 1.6 3.0 Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 11A, VGS = 0V - 0.83 1.1 V

Body Diode Reverse Recovery Time trr IF = 11A, dl/dt = 100A/µs - 22.2 33.3 ns

Body Diode Reverse Recovery Charge Qrr - 13.8 20.7 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V

3. T < 10sec.

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On

-

Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On

-

Resistance Variation with

Temperature

Fig.4 On

-

Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS=10V

ID=11.0A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

10-1

100

101

TA=25℃

Notes :※

VGS = 0V

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 1 2 3 4 5

0

4

8

12

16

VGS, Gate-Source Voltage [V]

TA=25℃

Notes :※

VDS = 5V

ID, Drain Current [A]

2 4 6 8 10

0

4

8

12

16

20

24

Notes :※

ID = 11.0A

TA = 25℃

RDS(ON) [mΩ ],

Drain-Source On-Resistance

VGS, Gate to Source Volatge [V]

0.0 0.5 1.0 1.5 2.0

0

5

10

15

20

8.0V

4.5V

3.5V

VGS = 10V

3.0V

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

5 10 15 20

3

6

9

12

15

VGS = 10V

VGS = 4.5V

Drain-Source On-Resistance [mΩ]

ID, Drain Current [A]

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current

v

s.

Case Temperature

Fig.11 Transient Thermal Response

Curve

0 3 6 9 12 15

0

2

4

6

8

10

Note : I※D = 11A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

25 50 75 100 125 150

0

10

20

30

40

50

ID, Drain Current [A]

TC, Case Temperature [ ]℃

10-4 10-3 10-2 10-1 100101102103

10-3

10-2

10-1

100

101

Notes :※

Duty Factor, D=t1/t2

PEAK TJ = PDM

* Zθ JC

* Rθ JC

(t) + TC

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ JC

, Thermal Response

t1, Rectangular Pulse Duration [sec]

0 5 10 15 20 25 30

0

300

600

900

1200

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

10-1 100101102

10-1

100

101

102

1s

100 ms

DC

10 ms

10s

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

Package Dimension

PowerDFN33 (3.3x3.3mm)

Dimensions are in millimeters, unless otherwise specified

May. 2011. Version1.2 MagnaChip Semiconductor Ltd.

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MDV1525 – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power

generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be

expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such

applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility

for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip

Semiconductor Ltd.