MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features * * * The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation ID IDP PD Channel Temperature Storage Temperature Drain Current (Pulse) PW10s, duty cycle1% P-channel Unit 30 --30 V 10 10 V 0.35 --0.2 A 1.4 --0.8 When mounted on ceramic substrate (900mm2x0.8mm) 1unit A 0.8 W Tch 150 C Tstg --55 to +150 C This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Product & Package Information unit : mm (typ) 7022A-006 * Package : MCPH6 * JEITA, JEDEC : SC-88, SC-70-6, SOT-363 * Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 Packing Type : TL 2 TL 3 0.65 FM LOT No. 0 t o 0.02 1 Marking 4 LOT No. 0.25 MCH6613-TL-E 0.15 2.1 1.6 0.25 Package Dimensions 0.3 0.07 0.85 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 6 5 4 1 2 3 http://semicon.sanyo.com/en/network 71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-3241 No.6920-1/9 MCH6613 Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=100A 0.4 VDS=10V, ID=80mA 150 RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time 30 V 1 A 10 A 1.3 220 V mS 7.0 pF 5.9 pF 2.3 pF td(on) 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC Gate-to-Source Charge Qgs 0.26 nC Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD IS=150mA, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 0.31 0.87 nC 1.2 V --1 A 10 A [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance --30 V VDS=--30V, VGS=0V VGS=8V, VDS=0V VGS(off) | yfs | VDS=--10V, ID=--100A --0.4 VDS=--10V, ID=--50mA 80 RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ciss --1.4 110 V mS 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 130 ns Total Gate Charge Qg 1.43 nC Gate-to-Source Charge Qgs 0.18 nC Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--100mA 0.25 IS=--100mA, VGS=0V --0.83 nC --1.2 V No.6920-2/9 MCH6613 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V 4V 0V VIN VDD= --15V ID=80mA RL=187.5 PW=10s D.C.1% D VIN 0V --4V VOUT VIN PW=10s D.C.1% ID= --50mA RL=300 D VIN G VOUT G P.G P.G MCH6613 50 MCH6613 50 S S Ordering Information Package Shipping memo MCPH6 3,000pcs./reel Pb Free ID -- VDS ID -- VDS [Nch] --0.10 5V 0.10 0.08 VGS=1.5V 0.06 0.04 --4 . [Pch] V .5 --2 V --0.07 --6.0 Drain Current, ID -- A --0.08 V 0.12 2 3.0 4.0V --3 . 2. --3.5V --0.09 .0V V 3.5V 6.0 Drain Current, ID -- A 0.14 0V 0.16 0V Device MCH6613-TL-E --2.0V --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 0.02 --0.01 0 0 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V C --25 Drain Current, ID -- A C --0.8 --1.0 --1.2 --1.4 --1.6 ID -- VGS --1.8 --2.0 IT00077 [Pch] VDS= --10V --0.16 25 C Ta= 0.20 --0.6 --0.20 --0.18 75 Drain Current, ID -- A 0.25 --0.4 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V --0.2 IT00029 ID -- VGS 0.30 0 1.0 0.15 0.10 --25 C 0.3 --0.14 25C --0.12 C 0.2 Ta= 0.1 --0.10 75 0 --0.08 --0.06 --0.04 0.05 --0.02 0 0 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V 2.5 3.0 IT00030 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT00078 No.6920-3/9 MCH6613 RDS(on) -- VGS 10 [Nch] RDS(on) -- VGS 30 [Pch] Ta=25C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 9 8 7 6 80mA 5 4 ID=40mA 3 2 1 0 1 2 3 4 5 6 7 8 9 IT00031 ID= --30mA --50mA 10 5 RDS(on) -- ID [Nch] 0 Static Drain-to-Source On-State Resistance, RDS(on) -- 5 Ta=75C 25C --25C 2 1.0 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A --25C 2 3 5 7 2 0.1 3 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- 3 2 Ta=75C 7 5 --25C 3 25C 2 1.0 0.001 2 3 5 7 0.01 Drain Current, ID -- A 2 Ta=75C 10 7 --25C 5 2 3 25C 3 2 2 3 5 7 --0.1 5 IT00034 2 3 IT00080 RDS(on) -- ID [Pch] VGS= --2.5V 5 3 2 Ta=75C 25C 10 --25C 7 5 3 2 2 3 5 7 --0.1 2 3 IT00081 RDS(on) -- ID [Pch] VGS= --1.5V 7 5 10 [Pch] 1000 VGS=1.5V 7 --10 VGS= --4V Drain Current, ID -- A [Nch] --9 3 1.0 --0.01 5 --8 RDS(on) -- ID IT00033 RDS(on) -- ID 100 --7 IT00079 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=75C 2 --6 7 25C 1.0 0.01 --5 Drain Current, ID -- A [Nch] 7 3 --4 5 1.0 --0.01 5 VGS=2.5V 5 --3 Gate-to-Source Voltage, VGS -- V IT00032 RDS(on) -- ID 10 --2 7 7 3 --1 100 VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- 15 10 Gate-to-Source Voltage, VGS -- V 10 Static Drain-to-Source On-State Resistance, RDS(on) -- 20 0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- 25 5 3 2 100 7 5 Ta=75C 3 2 10 --0.0001 --25C 2 3 25C 5 7 --0.001 Drain Current, ID -- A 2 3 IT00082 No.6920-4/9 MCH6613 RDS(on) -- Ta 18 Static Drain-to-Source On-State Resistance, RDS(on) -- 6 5 V 5 =2. V GS A, V 40m =4.0 I D= , VGS A 80m I D= 4 3 2 1 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 5 25C 25C Ta= -75C 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A 4 --40 --20 0 20 40 60 80 100 120 140 160 IT00083 | yfs | -- ID [Pch] VDS= --10V 3 2 0.1 25C 5C 2 Ta= -- 7 75C 5 3 2 0.01 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A IS -- VSD 5 3 IT00084 [Pch] VGS=0V VGS=0V 3 7 5 3 --0.1 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 [Nch] VDD=15V VGS=4V 3 td (off) tf 2 100 7 tr 5 3 td(on) 2 2 3 5 7 Drain Current, ID -- A 0.1 2 IT00038 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V IT00037 --1.1 IT00085 SW Time -- ID 1000 [Pch] VDD= --15V VGS= --4V 7 Switching Time, SW Time -- ns 5 --0.01 --0.5 1.2 C 0.1 --25 75 C 25 C --2 5C 2 2 25C Source Current, IS -- A 3 Ta = Source Current, IS -- A 6 5 5 2 Switching Time, SW Time -- ns A, = -V GS 7 5 10 0.01 V 4.0 50m -I D= 8 1.0 [Nch] 7 0.01 0.5 10 IT00036 IS -- VSD 1.0 30m -I D= 5C Forward Transfer Admittance, | yfs | -- S 7 = -V GS Ambient Temperature, Ta -- C [Nch] VDS=10V 3 A, 12 IT00035 | yfs | -- ID 1.0 V 2.5 14 2 --60 160 [Pch] 16 Ta= 7 0 --60 RDS(on) -- Ta [Nch] Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- 7 5 3 2 tf td(off) 100 7 tr 5 td(on) 3 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00086 No.6920-5/9 MCH6613 Ciss, Coss, Crss -- VDS 100 7 100 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 5 3 2 10 Ciss 7 Coss 5 3 2 10 Ciss 7 Coss 5 3 3 Crss 2 2 Crss 1.0 1.0 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V --5 Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 1 --20 --30 IT00087 [Pch] VDS= --10V ID= --100mA --8 --7 --6 --5 --4 --3 --2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC IT00040 ASO [Nch] 2 0.6 0.8 1.0 1.2 10m ID=0.35A s 3 DC 2 7 5 3 100 ms ope rat Operation in this area is limited by RDS(on). 0.1 Drain Current, ID -- A 7 ion ASO [Pch] IDP= --0.8A 1m 0.01 2 1.0 3 0.8 ms 3 ID= --0.2A 2 10 DC --0.1 0m s op era tio 7 n Operation in this area is limited by RDS(on). 5 5 7 2 10 2 3 5 IT02877 Drain-to-Source Voltage, VDS -- V PD -- Ta [Pch, Nch] 1.0 s 10 3 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm)1unit 2 1.6 IT00088 1m s 1.4 Total Gate Charge, Qg -- nC PW10s 7 5 1.0 0.4 --1.0 PW10s IDP=1.4A 0.2 0 1.6 3 5 --25 --1 0 Drain Current, ID -- A --15 VGS -- Qg --10 --9 8 --10 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V ID=150mA 9 0 20 IT00039 VGS -- Qg 10 Allowable Power Dissipation, PD -- W [Pch] f=1MHz 7 5 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- VDS [Nch] f=1MHz Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm)1unit --0.01 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT02878 M ou nte do na 0.6 ce ram ic bo ard 0.4 (90 0m m2 0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02879 No.6920-6/9 MCH6613 Embossed Taping Specification MCH6613-TL-E No.6920-7/9 MCH6613 Outline Drawing MCH6613-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6920-8/9 MCH6613 Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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