2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Military Qualified Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-205AD (TO-39) Device Marking Side View S 1 JAN2N6661* "S" fllxxyy 2 "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G *Note: or JANTX2N6661 JANTXV2N6661 D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 90 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ Pulsed Drain TC = 25_C TC = 100_C Currenta Power Dissipation TA = 25_C 0.54 A 3 6.25 PD 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range V 0.86 ID IDM TC = 25_C Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. Document Number: 70225 S-04279--Rev. B, 16-Jul-01 www.vishay.com 11-1 2N6661JAN/JANTX/JANTXV Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Typ Parameter Symbol Test Conditions Min NO TAG V(BR)DSS VGS = 0 V, ID = 10 mA 90 125 VDS = VGS, ID = 1 mA 0.8 1.6 2 1.8 2.5 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage TA = -55_C VGS(th) TA = 125_C 0.3 1.3 VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) "100 "500 TA = 125_C VDS = 72 V, VGS = 0 V Drain-Source On-Resistanceb Diode Forward Voltage nA 1 100 TA = 125_C VDS = 10 V, VGS = 10 V 1.8 m mA mA VGS = 5 V, ID = 0.3 A 3.8 5.3 rDS(on) VGS = 10 V, ID = 1 A 3.6 4 6.7 7.5 gfs VDS = 7.5 V, ID = 0.475 A 170 340 VSD IS = 0.86 A, VGS = 0 V 0.7 0.9 1.4 TA = 125_C Forward Transconductanceb V W mS V Dynamic Input Capacitance Ciss 35 50 Output Capacitance Coss 15 40 Reverse Transfer Capacitance Crss 2 10 Drain-Source Capacitance Cds VDS = 25 V, VGS = 0 V f = 1 MHz pF 30 Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V, RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. d. For typical characteristics curves see the 2N6661/VN88AFD data sheet. www.vishay.com 11-2 6 10 8 10 ns VNDQ09 Document Number: 70225 S-04279--Rev. B, 16-Jul-01